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| 2. |
- Gevorgian, Spartak, 1948, et al.
(författare)
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Coupling Among Waveguides of Small Spacing
- 1988
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Ingår i: Electronics Letters. - 1350-911X .- 0013-5194. ; 24:13, s. 814 - 815
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Tidskriftsartikel (refereegranskat)abstract
- A new approximation for the coupling coefficient between two optical waveguides is given. It is applied to nonparallel and parallel waveguides with small spacing and waveguides intersecting at small angles. It is shown that this new approximation predicts a higher degree of power transfer among waveguides than the widely used Marcuse approximation
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| 3. |
- Goobar, E., et al.
(författare)
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Measurement of a VPE-transported DFB laser with blue-shifted frequency modulation response from DC to 2 GHz
- 1988
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Ingår i: Electronics Letters. - 0013-5194 .- 1350-911X. ; 24, s. 746-747
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Tidskriftsartikel (refereegranskat)abstract
- The frequency modulation characteristics of a VPE-transported 1.53 mu;m wavelength GaInAsP-InP DFB semiconductor diode laser was measured. Below approximately 0.7 mW optical output power per facet, it exhibited a smooth, blue-shifted, frequency modulation response from DC to 2 GHz. In the modulation frequency range of 10 MHz to 100 MHz it exhibited a | Delta;f/ Delta;I| of 0.5-1.8 GHz/mA, depending on the biasing level
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| 4. |
- Goobar, E., et al.
(författare)
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Pure frequency modulation or intensity modulation with suppressed frequency chirp using active Bragg reflector integrated laser
- 1989
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 25, s. 304-305
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Tidskriftsartikel (refereegranskat)abstract
- The modulation properties of a laser structure which consists of an active Bragg reflector (300 mu m) integrated with an uncorrugated gain region (600 mu m) have been measured. The laser exhibited a flat FM response and very low spurious intensity modulation when modulating the current in the Bragg reflector. Furthermore, broadband intensity modulation with suppressed frequency chirp could also be achieved. An inhomogeneous linewidth enhancement factor alpha caused by the uneven carrier density distribution between the two sections gives a qualitative explanation to our results.
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| 5. |
- Kollberg, Erik, 1937, et al.
(författare)
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Quantum-Barrier-Varactor Diodes for High-Efficiency Millimetre-Wave Multipliers
- 1989
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 25:25, s. 1696-1698
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Tidskriftsartikel (refereegranskat)abstract
- A new device, the quantum-barrier-varactor diode (QBV diode), is proposed for use in multipliers for millimetre waves. Since the capacitance/voltage characteristic is symmetric, only odd harmonics are obtained. Hence there is no idler circuit to consider for the tripler and only one for the quintupler. It is shown that for triplers and quintuplers, the theoretical efficiency using QBVs is comparable or possibly larger than using Schottky varactor diodes.
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