| 1. |
- Alling, Björn, 1980-, et al.
(författare)
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Questionable collapse of the bulk modulus in CrN
- 2010
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Ingår i: Nature Materials. - London, UK : Nature Publishing Group. - 1476-1122 .- 1476-4660. ; 9:4, s. 283-284
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- In this comment we show that the main conclusion in a previous article, claiminga drastic increase in compressibility of CrN at the cubic to orthorhombic phasetransition, is unsupported by first-principles calculations. We show that if thecubic CrN phase is considered as a disordered magnetic material, as supported bydifferent experimental data, rather then non-magnetic, the bulk modulus is almostunaffected by the transition.
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| 2. |
- Argyriou, Dimitri
(författare)
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Reinventing neutron science in Europe
- 2014
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Ingår i: Nature Materials. - : Springer Science and Business Media LLC. - 1476-4660 .- 1476-1122. ; 13:8, s. 767-768
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- Neutron science has been a remarkable success story for European research. For this to continue, scientists need to be prepared to forge new networks and technologies.
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| 3. |
- Bubnova, Olga, et al.
(författare)
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Corrigendum: Semi-metallic polymers
- 2014
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Ingår i: Nature Materials. - : Springer Science and Business Media LLC. - 1476-1122 .- 1476-4660. ; 13, s. 662-662
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Tidskriftsartikel (refereegranskat)
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| 4. |
- Bubnova, Olga, et al.
(författare)
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Optimization of the thermoelectric figure of merit in the conducting polymer poly(3,4-ethylenedioxythiophene)
- 2011
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Ingår i: NATURE MATERIALS. - : Nature Publishing Group. - 1476-1122 .- 1476-4660. ; 10:6, s. 429-433
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Tidskriftsartikel (refereegranskat)abstract
- Thermoelectric generators (TEGs) transform a heat flow into electricity. Thermoelectric materials are being investigated for electricity production from waste heat (co-generation) and natural heat sources. For temperatures below 200 degrees C, the best commercially available inorganic semiconductors are bismuth telluride (Bi2Te3)-based alloys, which possess a figure of merit ZT close to one(1). Most of the recently discovered thermoelectric materials with ZT andgt; 2 exhibit one common property, namely their low lattice thermal conductivities(2,3). Nevertheless, a high ZT value is not enough to create a viable technology platform for energy harvesting. To generate electricity from large volumes of warm fluids, heat exchangers must be functionalized with TEGs. This requires thermoelectric materials that are readily synthesized, air stable, environmentally friendly and solution processable to create patterns on large areas. Here we show that conducting polymers might be capable of meeting these demands. The accurate control of the oxidation level in poly(3,4-ethylenedioxythiophene) (PEDOT) combined with its low intrinsic thermal conductivity (lambda = D 0.37W m(-1) K-1) yields a ZT = 0.25 at room temperature that approaches the values required for efficient devices.
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| 5. |
- Bubnova, Olga, et al.
(författare)
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Semi-metallic polymers
- 2014
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Ingår i: Nature Materials. - : Nature Publishing Group. - 1476-1122 .- 1476-4660. ; 13:2, s. 190-194
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Tidskriftsartikel (refereegranskat)abstract
- Polymers are lightweight, flexible, solution-processable materials that are promising for low-cost printed electronics as well as for mass-produced and large-area applications. Previous studies demonstrated that they can possess insulating, semiconducting or metallic properties; here we report that polymers can also be semi-metallic. Semi-metals, exemplified by bismuth, graphite and telluride alloys, have no energy bandgap and a very low density of states at the Fermi level. Furthermore, they typically have a higher Seebeck coefficient and lower thermal conductivities compared with metals, thus being suitable for thermoelectric applications. We measure the thermoelectric properties of various poly( 3,4-ethylenedioxythiophene) samples, and observe a marked increase in the Seebeck coefficient when the electrical conductivity is enhanced through molecular organization. This initiates the transition from a Fermi glass to a semi-metal. The high Seebeck value, the metallic conductivity at room temperature and the absence of unpaired electron spins makes polymer semi-metals attractive for thermoelectrics and spintronics.
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| 6. |
- Castelletto, S., et al.
(författare)
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A silicon carbide room-temperature single-photon source
- 2014
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Ingår i: Nature Materials. - : Nature Publishing Group. - 1476-1122 .- 1476-4660. ; 13:2, s. 151-156
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Tidskriftsartikel (refereegranskat)abstract
- Over the past few years, single-photon generation has been realized in numerous systems: single molecules(1), quantum dots(2-4), diamond colour centres5 and others(6). The generation and detection of single photons play a central role in the experimental foundation of quantum mechanics(7) and measurement theory(8). An efficient and high-quality single-photon source is needed to implement quantum key distribution, quantum repeaters and photonic quantum information processing(9). Here we report the identification and formation of ultrabright, room-temperature, photostable single-photon sources in a device-friendly material, silicon carbide (SiC). The source is composed of an intrinsic defect, known as the carbon antisite-vacancy pair, created by carefully optimized electron irradiation and annealing of ultrapure SiC. An extreme brightness (2 x 10(6) counts s(-1)) resulting from polarization rules and a high quantum efficiency is obtained in the bulk without resorting to the use of a cavity or plasmonic structure. This may benefit future integrated quantum photonic devices(9).
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| 7. |
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| 8. |
- Dziawa, P., et al.
(författare)
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Topological crystalline insulator states in Pb1-xSnxSe
- 2012
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Ingår i: Nature Materials. - 1476-1122 .- 1476-4660. ; 11:12, s. 1023-1027
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Tidskriftsartikel (refereegranskat)abstract
- Topological insulators are a class of quantum materials in which time-reversal symmetry, relativistic effects and an inverted band structure result in the occurrence of electronic metallic states on the surfaces of insulating bulk crystals. These helical states exhibit a Dirac-like energy dispersion across the bulk bandgap, and they are topologically protected. Recent theoretical results have suggested the existence of topological crystalline insulators (TCIs), a class of topological insulators in which crystalline symmetry replaces the role of time-reversal symmetry in ensuring topological protection(1,2). In this study we show that the narrow-gap semiconductor Pb1-xSnxSe is a TCI for x = 0.23. Temperature-dependent angle-resolved photoelectron spectroscopy demonstrates that the material undergoes a temperature-driven topological phase transition from a trivial insulator to a TCI. These experimental findings add a new class to the family of topological insulators, and we anticipate that they will lead to a considerable body of further research as well as detailed studies of topological phase transitions.
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| 9. |
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| 10. |
- Eschenlohr, A., et al.
(författare)
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Ultrafast spin transport as key to femtosecond demagnetization
- 2013
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Ingår i: Nature Materials. - 1476-1122 .- 1476-4660. ; 12:4, s. 332-336
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Tidskriftsartikel (refereegranskat)abstract
- Irradiating a ferromagnet with a femtosecond laser pulse is known to induce an ultrafast demagnetization within a few hundred femtoseconds. Here we demonstrate that direct laser irradiation is in fact not essential for ultrafast demagnetization, and that electron cascades caused by hot electron currents accomplish it very efficiently. We optically excite a Au/Ni layered structure in which the 30 nm Au capping layer absorbs the incident laser pump pulse and subsequently use the X-ray magnetic circular dichroism technique to probe the femtosecond demagnetization of the adjacent 15 nm Ni layer. A demagnetization effect corresponding to the scenario in which the laser directly excites the Ni film is observed, but with a slight temporal delay. We explain this unexpected observation by means of the demagnetizing effect of a superdiffusive current of non-equilibrium, non-spin-polarized electrons generated in the Au layer.
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