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Characterization of...
Characterization of InAlAs/InGaAs HFETs with high indium content in the channel grown on GaAs substrate
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- Rorsman, Niklas, 1964 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Karlsson, Christer, 1967 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Zirath, Herbert, 1955 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Wang, Shu Min, 1963 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Andersson, Thorvald, 1946 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- ISBN 9782863321355
- 1993
- 1993
- English.
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In: 23rd European Solid State Device Research Conference, ESSDERC 1993. - 1930-8876. - 9782863321355 ; , s. 765-768
- Related links:
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https://research.cha...
Abstract
Subject headings
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- InAlAs/InGaAs HFETs having very high indium content (80 and 100%) in the channel have been fabricated on GaAs and electrically characterized. The extrinsic transconductance were 310 mS/mm (560 mS/mm at 77 K), and the saturation current were 700 mA/mm (600 mA/mm at 77 K) for an InAs channel. The value of fT and fmaxfor this device were measured to be 80 GHz and 50 GHz, respectively. The In0.8Ga 0.2As channel material had extrinsic transconductance of 320 mS/mm (470 mS/mm at 77 K), and the saturation current were 520 mA/mm (440 mA/mm at 77K). The value of fT and fmaxfor this device were measured to be 80 GHz and 50 GHz, respectively
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Publication and Content Type
- kon (subject category)
- ref (subject category)
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