| 1. |
- Gatty, Hithesh K., et al.
(författare)
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Temporary Wafer Bonding and Debonding for 3D Integration Using an Electrochemically Active Polymer Adhesive
- 2014
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Ingår i: ECS Journal of Solid State Science and Technology. - : The Electrochemical Society. - 2162-8769 .- 2162-8777. ; 3:5, s. P115-P121
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Tidskriftsartikel (refereegranskat)abstract
- The use of thin silicon wafers is an enabling technology for 3D integration in the semiconductor industry. However, thin silicon wafers are fragile to handle and reliable solutions are required for thin wafer handling. This paper reports a novel method of bonding and debonding a thin wafer (< 50 mu m) using an electrochemically active polymer adhesive. In the presented method the carrier wafer is first spin coated with the adhesive and then bonded to the device wafer by applying force and temperature. Debonding of the wafer is realized at room temperature by applying a voltage between the carrier and the device wafer, which substantially reduces the bond strength. The bonding and debonding properties of the adhesive show that temporary wafer bonding using electrochemically active adhesives has the potential to be an attractive approach for temporary wafer bonding for thin wafer handling in 3D integration processes.
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| 2. |
- Li, Xun, et al.
(författare)
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Double-Position-Boundaries Free 3C-SiC Epitaxial Layers Grown on On-Axis 4H-SiC
- 2014
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Ingår i: ECS Journal of Solid State Science and Technology. - : Electrochemical Society. - 2162-8769 .- 2162-8777. ; 3:4, s. P75-P81
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Tidskriftsartikel (refereegranskat)abstract
- High quality double-position-boundaries free 3C-SiC epilayers have been successfully grown on on-axis (0001) 4H-SiC by chemical vapor deposition at optimized conditions as observed with optical microscopy and X-ray diffraction. The effect of the growth parameters, including temperature, C/Si ratio, ramp-up condition, Si/H-2 ratio, N-2 addition and pressure, on the quality of the grown layers is investigated. Different techniques, including microscopic and spectroscopic techniques, are used to characterize the epilayers. High resolution X-ray diffraction shows 2 theta-omega curve with full width at half maximum of only 16 arcsec for the (111) reflection detected from a 35 mu m thick 3C-SiC layer, showing the good structural quality of the layer. Reciprocal space maps confirm the absence of double-position-boundaries in a large depth of the layers. Low temperature photoluminescence measurement shows clear near-bandgap emission with sharp and single peaks, which further verifies the high quality of the epilayers.
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| 3. |
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| 4. |
- Yazdanfar, Milan, et al.
(författare)
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Finding the Optimum Chloride-Based Chemistry for Chemical Vapor Deposition of SiC
- 2014
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Ingår i: ECS Journal of Solid State Science and Technology. - : ECS. - 2162-8769 .- 2162-8777. ; 3:10, s. P320-P323
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Tidskriftsartikel (refereegranskat)abstract
- Chemical vapor deposition of silicon carbide with a chloride-based chemistry can be done using several different silicon and carbon precursors. Here, we present a comparative study of SiCl4, SiHCl3, SiH4+HCl, C3H8, C2H4 and CH4 in an attempt to find the optimal precursor combination. We find that while the chlorinated silanes SiCl4 and especially SiHCl3 give higher growth rate than natural silane and HCl, SiH4+HCl gives better morphology at C/Si around 1 and SiCl4 gives the best morphology at low C/Si. Our study shows no effect on doping incorporation with precursor chemistry. We suggest that these results can be explained by the number of reaction steps in the gas phase chemical reaction mechanisms for producing SiCl2, which is the most important Si species, and by formation of organosilicons in the gas phase. As carbon precursor, C3H8 or C2H4 are more or less equal in performance with a slight advantage for C3H8, CH4 is however not a carbon precursor that should be used unless extraordinary growth conditions are needed.
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