| 1. |
- Vali, Mehran, et al.
(author)
-
Boron Nitride-Graphene (BN-G) Bilayer as a Channel of Graphene Based Field Effect Transistor
- 2023
-
In: ECS Journal of Solid State Science and Technology. - : Institute of Physics (IOP). - 2162-8769 .- 2162-8777. ; 12:2
-
Journal article (peer-reviewed)abstract
- According to the effect of the interlayer interaction of the boron nitride sheet on electronic properties, especially the energy band gap of the graphene sheet in the boron nitride-graphene (BN-G) bilayer, we propose a gapless graphene-based field effect transistor (FET). It is comprised of a boron nitride layer on top of graphene in the channel region. In this study, we investigate the transfer characteristic and output characteristic of the proposed device for different values of the interlayer distance of (BN-G) bilayer. Also, we compare the output results with simulated bilayer graphene channel FET. We find that the I-on/I-off ratio in the proposed device shows a significant promotion compared to graphene bilayer channel FET. Our first-principles calculations show that by decreasing the inter-layer distance of (BN-G) bilayer, the energy gap increase which leads to a dipper I-off current and an increase of I-on/I-off ratio up to 104 for an inter-layer distance of 2.7 angstroms. Moreover, it is found that the proposed device output characteristic displays a very good saturation due to improved pinch-off of the channel.
|
|
| 2. |
- Yangui, Aymen, 1987, et al.
(author)
-
Phosphor Thermometry of Alumina-Forming High-Temperature Alloys Using Luminescent Rare-Earth Ions in YAG: Proof of Concept Using a Dispersion of Ce 3+ -Doped YAG Particles in a FeCrAl Alloy
- 2023
-
In: ECS Journal of Solid State Science and Technology. - : The Electrochemical Society. - 2162-8777 .- 2162-8769. ; 12:3
-
Journal article (peer-reviewed)abstract
- Most high-temperature processes require monitoring and controlling temperature, preferably with high precision and good lateral resolution. Here we evaluate the use of the technique commonly known as phosphor thermometry, which exploits the temperature dependent photoluminescence from an inorganic phosphor, for the determination of the temperature of a composite material consisting of the metallic alloy FeCrAl dispersed with phosphor particles of yttrium aluminum garnet (Y3Al5O12, YAG) doped with a small amount of luminescent Ce3+ ions (YAG:Ce3+). The results show that with some optimization and by changing the dopant ion, YAG based phosphor particles offer a unique opportunity to measure the surface temperature of metal alloys with high precision and high lateral resolution, all the way up to the maximum working temperature of alumina-forming high temperature alloys at ca. 1300 °C.
|
|
