| 1. |
- A. Madsen, Kevin, et al.
(författare)
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Josephson effect in a Weyl SNS junction
- 2017
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Ingår i: Physical Review B. - 2469-9950 .- 2469-9969. ; 95:6
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Tidskriftsartikel (refereegranskat)abstract
- We calculate the Josephson current density j (phi) for a Weyl superconductor-normal-metal-superconductor junction for which the outer terminals are superconducting Weylmetals and the normal layer is a Weyl (semi) metal. We describe the Weyl (semi) metal using a simple model with two Weyl points. The model has broken time-reversal symmetry, but inversion symmetry is present. We calculate the Josephson current for both zero and finite temperature for the two pairing mechanisms inside the superconductors that have been proposed in the literature, zero-momentum BCS-like pairing and finite-momentum FFLO-like pairing, and assuming the short-junction limit. For both pairing types we find that the current is proportional to the normal-state junction conductivity, with a proportionality coefficient that shows quantitative differences between the two pairing mechanisms. The current for the BCS-like pairing is found to be independent of the chemical potential, whereas the current for the FFLO-like pairing is not.
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| 2. |
- Abay, Simon, 1980, et al.
(författare)
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Charge transport in InAs nanowire Josephson junctions
- 2014
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Ingår i: Physical Review B - Condensed Matter and Materials Physics. - 2469-9950 .- 2469-9969 .- 1098-0121. ; 89:21, s. 214508-
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Tidskriftsartikel (refereegranskat)abstract
- We present an extensive experimental and theoretical study of the proximity effect in InAs nanowires connected to superconducting electrodes. We fabricate and investigate devices with suspended gate-controlled nanowires and nonsuspended nanowires, with a broad range of lengths and normal-state resistances. We analyze the main features of the current-voltage characteristics: the Josephson current, excess current, and subgap current as functions of length, temperature, magnetic field, and gate voltage, and compare them with theory. The Josephson critical current for a short-length device, L = 30 nm, exhibits a record high magnitude of 800 nA at low temperature that comes close to the theoretically expected value. The critical current in all other devices is typically reduced compared to the theoretical values. The excess current is consistent with the normal resistance data and agrees well with the theory. The subgap current shows a large number of structures; some of them are identified as subharmonic gap structures generated by multiple Andreev reflection. The other structures, detected in both suspended and nonsuspended devices, have the form of voltage steps at voltages that are independent of either the superconducting gap or length of the wire. By varying the gate voltage in suspended devices, we are able to observe a crossover from typical tunneling transport at large negative gate voltage, with suppressed subgap current and negative excess current, to pronounced proximity junction behavior at large positive gate voltage, with enhanced Josephson current and subgap conductance as well as a large positive excess current.
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| 3. |
- Abdalla, Hassan, et al.
(författare)
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Investigation of the dimensionality of charge transport in organic field effect transistors
- 2017
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Ingår i: Physical Review B. - : AMER PHYSICAL SOC. - 2469-9950 .- 2469-9969. ; 95:8
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Tidskriftsartikel (refereegranskat)abstract
- Ever since the first experimental investigations of organic field effect transistors (OFETs) the dimensionality of charge transport has alternately been described as two dimensional (2D) and three dimensional (3D). More recently, researchers have turned to an analytical analysis of the temperature-dependent transfer characteristics to classify the dimensionality as either 2D or 3D as well as to determine the disorder of the system, thereby greatly simplifying dimensionality investigations. We applied said analytical analysis to the experimental results of our OFETs comprising molecularly well-defined polymeric layers as the active material as well as to results obtained from kinetic Monte Carlo simulations and found that it was not able to correctly distinguish between 2D and 3D transports or give meaningful values for the disorder and should only be used for quasiquantitative and comparative analysis. We conclude to show that the dimensionality of charge transport in OFETs is a function of the interplay between transistor physics and morphology of the organic material.
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| 4. |
- Abdalla, Hassan, et al.
(författare)
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Range and energetics of charge hopping in organic semiconductors
- 2017
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Ingår i: Physical Review B. - : AMER PHYSICAL SOC. - 2469-9950 .- 2469-9969. ; 96:24
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Tidskriftsartikel (refereegranskat)abstract
- The recent upswing in attention for the thermoelectric properties of organic semiconductors (OSCs) adds urgency to the need for a quantitative description of the range and energetics of hopping transport in organic semiconductors under relevant circumstances, i.e., around room temperature (RT). In particular, the degree to which hops beyond the nearest neighbor must be accounted for at RT is still largely unknown. Here, measurements of charge and energy transport in doped OSCs are combined with analytical modeling to reach the univocal conclusion that variable-range hopping is the proper description in a large class of disordered OSC at RT. To obtain quantitative agreement with experiment, one needs to account for the modification of the density of states by ionized dopants. These Coulomb interactions give rise to a deep tail of trap states that is independent of the materials initial energetic disorder. Insertion of this effect into a classical Mott-type variable-range hopping model allows one to give a quantitative description of temperature-dependent conductivity and thermopower measurements on a wide range of disordered OSCs. In particular, the model explains the commonly observed quasiuniversal power-law relation between the Seebeck coefficient and the conductivity.
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| 5. |
- Abdel-Hafiez, Mahmoud, et al.
(författare)
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Pressure-induced reentrant transition in NbS3 phases : Combined Raman scattering and x-ray diffraction study
- 2019
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Ingår i: Physical Review B. - : AMER PHYSICAL SOC. - 2469-9950 .- 2469-9969. ; 99:23
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Tidskriftsartikel (refereegranskat)abstract
- We report the evolution of charge density wave states under pressure for two NbS3 phases: triclinic (phase I) and monoclinic (phase II) at room temperature. Raman and x-ray diffraction (XRD) techniques are applied. The x-ray studies on the monoclinic phase under pressure show a compression of the lattice at different rates below and above similar to 7 GPa but without a change in space group symmetry. The Raman spectra of the two phases evolve similarly with pressure; all peaks almost disappear in the similar to 6-8 GPa range, indicating a transition from an insulating to a metallic state, and peaks at new positions appear above 8 GPa. The results suggest suppression of the ambient charge-density waves and their subsequent recovery with new orderings above 8 GPa.
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| 6. |
- Abdeldaim, Aly, 1993, et al.
(författare)
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Large easy-axis anisotropy in the one-dimensional magnet BaMo(PO4)(2)
- 2019
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Ingår i: Physical Review B. - : AMER PHYSICAL SOC. - 2469-9969 .- 2469-9950. ; 100:21
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Tidskriftsartikel (refereegranskat)abstract
- We present an extensive experimental and theoretical study on the low-temperature magnetic properties of the monoclinic anhydrous alum compound BaMo(PO4)(2). The magnetic susceptibility reveals strong antiferromagnetic interactions theta(CW) = -167 K and long-range magnetic order at T-N = 22 K, in agreement with a recent report. Powder neutron diffraction furthermore shows that the order is collinear, with the moments near the ac plane. Neutron spectroscopy reveals a large excitation gap Delta = 15 meV in the low-temperature ordered phase, suggesting a much larger easy-axis spin anisotropy than anticipated. However, the large anisotropy justifies the relatively high ordered moment, Neel temperature, and collinear order observed experimentally and is furthermore reproduced in a first-principles calculations by using a new computational scheme. We therefore propose BaMo(PO4)(2) to host S = 1 antiferromagnetic chains with large easy-axis anisotropy, which has been theoretically predicted to realize novel excitation continua.
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| 7. |
- Abergel, David, et al.
(författare)
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Infrared absorption of closely aligned heterostructures of monolayer and bilayer graphene with hexagonal boron nitride
- 2015
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : AMER PHYSICAL SOC. - 1098-0121 .- 1550-235X. ; 92:11
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Tidskriftsartikel (refereegranskat)abstract
- We model optical absorption of monolayer and bilayer graphene on hexagonal boron nitride for the case of closely aligned crystal lattices. We show that perturbations with different spatial symmetry can lead to similar absorption spectra. We suggest that a study of the absorption spectra as a function of the doping for an almost completely full first miniband is necessary to extract meaningful information about the moire characteristics from optical absorption measurements and to distinguish between various theoretical proposals for the physically realistic interaction. Also, for bilayer graphene, the ability to compare spectra for the opposite signs of electric-field-induced interlayer asymmetry might provide additional information about the moire parameters.
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| 8. |
- Aeschlimann, S., et al.
(författare)
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Ultrafast momentum imaging of pseudospin-flip excitations in graphene
- 2017
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Ingår i: Physical Review B. - 2469-9969 .- 2469-9950. ; 96:2
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Tidskriftsartikel (refereegranskat)abstract
- The pseudospin of Dirac electrons in graphene manifests itself in a peculiar momentum anisotropy for photoexcited electron-hole pairs. These interband excitations are in fact forbidden along the direction of the light polarization and are maximum perpendicular to it. Here, we use time-and angle-resolved photoemission spectroscopy to investigate the resulting unconventional hot carrier dynamics, sampling carrier distributions as a function of energy, and in-plane momentum. We first show that the rapidly-established quasithermal electron distribution initially exhibits an azimuth-dependent temperature, consistent with relaxation through collinear electron-electron scattering. Azimuthal thermalization is found to occur only at longer time delays, at a rate that depends on the substrate and the static doping level. Further, we observe pronounced differences in the electron and hole dynamics in n-doped samples. By simulating the Coulomb-and phonon-mediated carrier dynamics we are able to disentangle the influence of excitation fluence, screening, and doping, and develop a microscopic picture of the carrier dynamics in photoexcited graphene. Our results clarify new aspects of hot carrier dynamics that are unique to Dirac materials, with relevance for photocontrol experiments and optoelectronic device applications.
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| 9. |
- Ahlberg Helgee, Edit, 1986, et al.
(författare)
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Diffraction and near-zero transmission of flexural phonons at graphene grain boundaries
- 2015
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Ingår i: Physical Review B - Condensed Matter and Materials Physics. - 2469-9950 .- 2469-9969. ; 91:20
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Tidskriftsartikel (refereegranskat)abstract
- Graphene grain boundaries are known to affect phonon transport and thermal conductivity, suggesting that they may be used to engineer the phononic properties of graphene. Here, the effect of two buckled grain boundaries on long-wavelength flexural acoustic phonons has been investigated as a function of angle of incidence using molecular dynamics. The flexural acoustic mode has been chosen due to its importance to thermal transport. It is found that the transmission through the boundaries is strongly suppressed for incidence angles close to 35 degrees. Also, the grain boundaries are found to act as diffraction gratings for the phonons.
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| 10. |
- Ahlberg Helgee, Edit, 1986, et al.
(författare)
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Scattering of flexural acoustic phonons at grain boundaries in graphene
- 2014
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Ingår i: Physical Review B - Condensed Matter and Materials Physics. - 2469-9950 .- 2469-9969. ; 90:4
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Tidskriftsartikel (refereegranskat)abstract
- We investigate the scattering of long-wavelength flexural phonons against grain boundaries in graphene using molecular dynamics simulations. Three symmetric tilt grain boundaries are considered: one with a misorientation angle of 17.9 degrees displaying an out-of-plane buckling 1.5 nm high and 5 nm wide, one with a misorientation angle of 9.4 degrees and an out-of-plane buckling 0.6 nm high and 1.7 nm wide, and one with a misorientation angle of 32.2 degrees and no out-of-plane buckling. At the flat grain boundary, the phonon transmission exceeds 95% for wavelengths above 1 nm. The buckled boundaries have a substantially lower transmission in this wavelength range, with a minimum transmission of 20% for the 17.9 degrees boundary and 40% for the 9.4 degrees boundary. At the buckled boundaries, coupling between flexural and longitudinal phonon modes is also observed. The results indicate that scattering of long-wavelength flexural phonons at grain boundaries in graphene is mainly due to out-of-plane buckling. A continuum mechanical model of the scattering process has been developed, providing a deeper understanding of the scattering process as well as a way to calculate the effect of a grain boundary on long-wavelength flexural phonons based on the buckling size.
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