| 1. |
- Lundberg, Nils, et al.
(författare)
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Temperature stability of cobalt Schottky contacts on n- and p-type 6H silicon carbide
- 1993
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Ingår i: Applied Surface Science. - 0169-4332 .- 1873-5584. ; 73:C, s. 316-321
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Tidskriftsartikel (refereegranskat)abstract
- Rectifying Schottky contacts have been manufactured on n- and p-type 6H silicon carbide using e-beam evaporation of cobalt. Heat treatments in the 300 to 1100°C temperature range have been made to study the feasibility of high temperature contacts in this material system. Rutherford backscattering spectrometry and X-ray diffraction have revealed the formation of different cobalt silicides (Co2Si, CoSi, and CoSi2) at higher temperatures than for the Co/Si system. No evidence of silicidation was found below 600°C and SEM micrographs revealed carbon agglomerates at the surface after silicidation. Electrical properties have been examined using I-V and C-V measurements, and the barrier heights of cobalt and Co2Si were evaluated. The contacts displayed excellent forward I-V characteristics with good linearity over 3-6 decades and were rectifying even after heat treatments at 800°C. © 1993.
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| 2. |
- Zetterling, Carl-Mikael, et al.
(författare)
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Comparison of thermal gate oxides on silicon and carbon face p-type 6H silicon carbide
- 1994
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Ingår i: Materials Research Society Symposium - Proceedings. - San Francisco, CA, USA. ; , s. 209-214
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Konferensbidrag (refereegranskat)abstract
- Monocrystalline 6H silicon carbide samples (n-type and p-type) with both carbon face and silicon face have been used to investigate gate oxide quality. The oxides were thermally grown in a dry oxygen ambient at 1523 K with or without the addition of TCA (Trichloroethane), or in wet pyrogenic steam at 1473 K. POCl3 doped polysilicon gates were used for electrical characterisation by capacitance-voltage measurements and breakdown field measurements. Large flatband voltage shifts indicate fixed oxide charges up to 1013 cm-2. The incorporation of aluminum in the oxides was monitored using SIMS (Secondary Ion Mass Spectrometry). Surprisingly high signals were interpreted as evidence of an aluminum-oxygen compound having been formed (ie Al2O3).
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| 3. |
- Zetterling, Carl-Mikael, et al.
(författare)
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Electrical Properties of Thin Oxides for MOSFETs in the Poly-Si / SiO2 / 6H Silicon Carbide System
- 1993
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Ingår i: Solid State Device Research Conference, 1993. ESSDERC ’93. 23rd European. - 2863321358 ; , s. 497-500
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Konferensbidrag (refereegranskat)abstract
- This paper describes the fabrication of polysilicon / SiO2 / 6H silicon carbide structures with four different types of thin gate oxides. Wet and dry thermal oxidation, plasma-enhanced chemical vapor deposition (PECVD), and also an alternative method, oxidation of e-beam evaporated silicon, have been investigated. The four oxides were compared using capacitance-voltage measurements and breakdown field measurements. Breakdown fields exceeded 8 MV/cm for the thermal oxides, which is higher than previously published values.
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