| 1. |
- Moschetti, Giuseppe, 1982, et al.
(författare)
-
Cryogenic InAs/AlSb HEMT Wideband Low-Noise IF Amplifier for Ultra-Low-Power Applications
- 2012
-
Ingår i: IEEE Microwave and Wireless Components Letters. - 1558-1764 .- 1531-1309. ; 22:3, s. 144-146
-
Tidskriftsartikel (refereegranskat)abstract
- A cryogenic wideband 4-8 GHz hybrid low-noise amplifier, based on a 110 nm gate length InAs/AlSb HEMT process is presented. At room temperature the three-stage amplifier exhibited a transducer gain of 29 dB and a noise temperature of 150 K with 17.6 mW power consumption. When cooled to 13 K, the amplifier showed a minimum noise temperature of 19 K at a power consumption of 6 mW (66% reduction compared to room temperature). At cryogenic temperature, the optimum drain voltage for best noise performance was reduced from 0.55 V down to 0.3 V, demonstrating the very low-power and low-voltage capabilities of InAs/AlSb HEMT based low-noise amplifiers at cryogenic temperature.
|
|
| 2. |
- Moschetti, Giuseppe, 1982, et al.
(författare)
-
Cryogenic Operation of InAs/AlSb HEMT Hybrid LNAs
- 2012
-
Ingår i: 15th European Microwave Week - Space for Microwaves Conference Proceedings. Amsterdam, NETHERLANDS. OCT 28-NOV 02, 2012. - 9782874870286 ; , s. 373-376
-
Konferensbidrag (refereegranskat)abstract
- The suitability of InAs/AlSb HEMTs for cryogenic ultra low-power applications is investigated. Compared to room temperature, the device exhibited significantly improved drain current saturation, higher peak transconductance and lower gate current leakage at around 10 K. When tested in a three-stage hybrid 4-8 GHz LNA under cryogenic conditions, the LNA noise figure was 0.27 dB at an extremely low power consumption of 0.6 mW per stage.
|
|
| 3. |
|
|
| 4. |
- Chehrenegar, Pirooz, 1964, et al.
(författare)
-
Highly linear 1-3 GHz GaN HEMT low-noise amplifier
- 2012
-
Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781467310871
-
Konferensbidrag (refereegranskat)abstract
- A highly linear low-noise amplifier (LNA) based on a commercial Gallium Nitride (GaN) high electron mobility transistor (HEMT) technology is presented. The amplifier can be operated at three frequency bands of 1, 2 and 3 GHz. The maximum measured gain is 31 dB at 1GHz and the output referred third-order intercept point (OIP3) is constant for all three frequency bands and equal to 41±1 dBm at a power consumption of L.2 W. A minimum noise figure (NF) of 0.5 dB is measured for the amplifier at the same bias point demonstrating the simultaneous linearity and low noise performance. The presented performance together with the reasonably low power consumption is outstanding in comparison with recently published amplifiers in GaN technology and available commercial GaAs LNAs.
|
|
| 5. |
- Ferndahl, Mattias, 1973, et al.
(författare)
-
Highly integrated E-band direct conversion receiver
- 2012
-
Ingår i: 2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012, La Jolla, CA, 14 - 17 October 2012. - 1550-8781. - 9781467309295
-
Konferensbidrag (refereegranskat)abstract
- This paper presents a highly integrated 70-98 GHz direct conversion receiver with 3 stage LNA, x6 frequency multiplier with buffer amplifier, and IQ-mixer suitable for Eband radio communication. The LNA, x6 and IQ-mixer are also presented separately. The LNA covers 65 to 95 GHz with 15 dB gain and minimum 5.5 dB noise figure, x6 covers 71 to 91 GHz with 0 to 8 dBm output power and the IQ-mixer an RF frequency from 70 to 95 GHz and IF frequency from DC to 12 GHz with only 8 dB conversion loss and better than 15 dB image reject. The complete receiver circuit shows an RF bandwidth of 70 to 98 GHz, LO bandwidth of 75 to 92 GHz and IF bandwidth from DC to more than 12 GHz. The conversion gain is 3 to 6 dB with a noise figure of 5 to 7 dB, the image rejection 15 dB to as high as 28 dB, and the input 1 dB compression point -12 dBm.
|
|
| 6. |
- Zirath, Herbert, 1955, et al.
(författare)
-
Multifunction low noise millimeterwave MMICs for remote sensing
- 2012
-
Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781467310871
-
Konferensbidrag (refereegranskat)abstract
- Integrated millimterwave heterodyne receivers for remote sensing applications in the frequency range 90 to 220 GHz utilizing active mHEMT devices have been designed, fabricated and characterized. Packages for the MMICs have also been designed and evaluated. For the integrated receivers, noise figures of 3.5 and 8dB are obtained at 100 and 220 GHz respectively at room temperature. When cooled to 20 K, a noise temperature of 60-80 K is obtained from 90-112 GHz for a packaged amplifier MMIC.
|
|
