| 1. |
- Agarwal, A., et al.
(författare)
-
Control of the Release of Freely Diffusing Molecules in Single-Cell Electroporation
- 2009
-
Ingår i: Analytical Chemistry. - : American Chemical Society (ACS). - 0003-2700 .- 1520-6882. ; 81:19, s. 8001-8008
-
Tidskriftsartikel (refereegranskat)abstract
- Single-cell electroporation using an electrolyte-filled capillary is an emerging technique for transient pore formation in adherent cells. Because adherent cells do not have a simple and consistent shape and because the electric field emanating from the tip of the capillary is inhomogeneous, the Schwan equation based on spherical cells in homogeneous electrical fields does not apply. We sought to determine experimental and cell parameters that influence the outcome of a single-cell electroporation experiment. A549 cells were exposed to the thiol-reactive dye Thioglo-1, leading to green fluorescence from intracellular thiol adducts. Electroporation causes a decrease with time of the intracellular fluorescence intensity of Thioglo-1-loaded cells from diffusive loss of thiol adducts. The transient curves thus obtained are well-described by a simple model originally developed by Puc et al. We find that the final fluorescence following electroporation is related to the capillary tip-to-cell distance and cell size (specifically, 2(A/pi)(1/2) where A is the area of the cell's image in pixels. This quantity is the diameter if the image is a circle). In separate experiments, the relationship obtained can be used to control the final fluorescence following electroporation by adjusting the tip-to-cell distance based on cell size. The relationship was applied successfully to A549 as Well as DU 145 and PC-3 cells. Finally, F-tests show that the variability in the final fluorescence (following electroporation) is decreased when the tip-to-cell distance is controlled according to the derived relationship in comparison to experiments in which the tip-cell distance is a constant irrespective of cell size.
|
|
| 2. |
- Garg, K. B., et al.
(författare)
-
Study of Sb substitution for Pr in the Pr0.67Ba0.33MnO3 system
- 2009
-
Ingår i: Journal of Magnetism and Magnetic Materials. - : Elsevier BV. - 0304-8853 .- 1873-4766. ; 321:4, s. 305-311
-
Tidskriftsartikel (refereegranskat)abstract
- We study the effect of Sb substitution for Pr in the hole-doped system Pr0.67Ba0.33MnO3 (PBMO) for different doping levels of Sb. The two electrical resistivity transitions observed in the pristine sample PBMO shift to low temperatures on Sb doping with an overall increase in the electrical resistivity. The significant local lattice distortion and the grain boundary effects caused by the large cation size mismatch between Pr3+ and Sb3+ suppresses the double-exchange (DE) interaction and enhances the super-exchange (SE) interaction. The compounds show a significant and increasing value of magnetoresistance at temperatures below the Curie temperature, not expected from the DE model. The Curie temperature decreases with increase in Sb content but the saturation magnetization is little affected by the substitution. The spins, however, stay well aligned in the low-temperature regime. Our X-ray near-edge absorption spectra (XANES) and core level photoemission (XPS) data clearly show the Sb cation to be in +3 state and rule out any possibility of e-doping in our compounds.
|
|
| 3. |
|
|
| 4. |
|
|
| 5. |
- Thelander, Claes, et al.
(författare)
-
Nanowire-based one-dimensional electronics
- 2006
-
Ingår i: Materials Today. - 1369-7021. ; 9:10, s. 28-35
-
Tidskriftsartikel (refereegranskat)abstract
- During the last half century, a dramatic downscaling of electronics has taken place, a miniaturization that the industry expects to continue for at least a decade. We present efforts to use the self-assembly of one-dimensional semiconductor nanowires(1) in order to bring new, high-performance nanowire devices as an add-on to mainstream Si technology. The nanowire approach offers a coaxial gate-dielectric-channel geometry that is ideal for further downscaling and electrostatic control, as well as heterostructure-based devices on Si wafers.
|
|
