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- Ali, Hasan, 1985-, et al.
(författare)
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Quantitative EMCD by use of a double aperture for simultaneous acquisition of EELS
- 2019
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Ingår i: Ultramicroscopy. - : Elsevier BV. - 0304-3991 .- 1879-2723. ; 196, s. 192-196
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Tidskriftsartikel (refereegranskat)abstract
- The weak signal strength in electron magnetic circular dichroism (EMCD) measurements remains one of the main challenges in the quantification of EMCD related EELS spectra. As a consequence, small variations in peak intensity caused by changes of background intervals, choice of method for extraction of signal intensity and equally differences in sample quality can cause strong changes in the EMCD signal. When aiming for high resolution quantitative EMCD, an additional difficulty consists in the fact that the two angular resolved EELS spectra needed to obtain the EMCD signal are taken at two different instances and it cannot be guaranteed that the acquisition conditions for these two spectra are identical. Here, we present an experimental setup where we use a double hole aperture in the transmission electron microscope to obtain the EMCD signal in a single acquisition. This geometry allows for the parallel acquisition of the two electron energy loss spectra (EELS) under exactly the same conditions. We also compare the double aperture acquisition mode with the qE acquisition mode which has been previously used for parallel acquisition of EMCD. We show that the double aperture mode not only offers better signal to noise ratio as compared to qE mode but also allows for much higher acquisition times to significantly improve the signal quality which is crucial for quantitative analysis of the magnetic moments.
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| 3. |
- Omanakuttan, Giriprasanth, et al.
(författare)
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Optical and interface properties of direct InP/Si heterojunction formed by corrugated epitaxial lateral overgrowth
- 2019
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Ingår i: Optical Materials Express. - : OPTICAL SOC AMER. - 2159-3930 .- 2159-3930. ; 9:3, s. 1488-1500
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Tidskriftsartikel (refereegranskat)abstract
- We fabricate and study direct InP/Si heterojunction by corrugated epitaxial lateral overgrowth (CELOG). The crystalline quality and depth-dependent charge carrier dynamics of InP/Si heterojunction are assessed by characterizing the cross-section of grown layer by low-temperature cathodoluminescence, time-resolved photoluminescence and transmission electron microscopy. Compared to the defective seed InP layer on Si, higher intensity band edge emission in cathodoluminescence spectra and enhanced carrier lifetime of InP are observed above the CELOG InP/Si interface despite large lattice mismatch, which are attributed to the reduced threading dislocation density realized by the CELOG method. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
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