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- Rashid, S. J., et al.
(författare)
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Modelling of single-crystal diamond Schottky diodes for high-voltage applications
- 2006
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Ingår i: Diamond and related materials. - : Elsevier BV. - 0925-9635 .- 1879-0062. ; 15, s. 317-323
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Tidskriftsartikel (refereegranskat)abstract
- The modelling of Schottky m-i-p(+) (SMIP) diodes fabricated on chemical vapour deposited (CVD) single crystal (SC) diamond intrinsic layers grown on highly boron doped CVD diamond Substrates is reported. Variations in intrinsic layer thickness, Schottky metal type and operating temperature have been included in the analysis. Numerical models that take into account the activation of dopants, concentration and temperature dependant mobility and avalanche coefficients have been derived to successfully simulate experimental diamond devices.
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| 2. |
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| 3. |
- Rashid, S. J., et al.
(författare)
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Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis
- 2008
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Ingår i: IEEE Transactions on Electron Devices. - 0018-9383 .- 1557-9646. ; 55:10, s. 2744-2756
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Tidskriftsartikel (refereegranskat)abstract
- High-quality electronic-grade intrinsic chemical-vapor-deposited (CVD) single-crystal diamond layers having exceptionally high carrier mobilities have been reported by Isberg et al. This makes the realization of novel electronic devices in diamond, particularly for high-voltage and high-temperature applications, a viable proposition. As such, material models which can capture the particular features of diamond as a semiconductor are required to analyze, optimize, and quantitatively design new devices. For example, the incomplete ionization of boron in diamond and the transition to metallic conduction in heavily boron-doped layers require accurate carrier freeze-out models to be included in the simulation of diamond devices. Models describing these phenomena are proposed in this paper and include numerical approximation of intrinsic diamond which is necessary to formulate doping- and temperature-dependent mobility models. They enable a concise numerical description of single-crystal diamond which agrees with data obtained from material characterization. The models are verified by application to new Schottky m-i-p(+) diode structures in diamond. Simulated forward characteristics show excellent correlation with experimental measurements. In spite of the lack of impact ionization data for single-crystal diamond, approximation of avalanche coefficient parameters from other wide-bandgap semiconductors has also enabled the reverse blocking characteristics of diamond diodes to be simulated. Acceptable agreement with breakdown voltage from experimental devices made with presently available single-crystal CVD diamond is obtained.
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| 4. |
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| 5. |
- Roy, Debdulal, et al.
(författare)
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Does hydrogen change the fullerenelike structure in CNx thin films?
- 2009
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Ingår i: JOURNAL OF VACUUM SCIENCE and TECHNOLOGY A. - : American Vacuum Society. - 0734-2101. ; 27:5, s. 1227-1230
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Tidskriftsartikel (refereegranskat)abstract
- The authors have reported the structure of the nanoclusters in carbon nitride thin films before [D. Roy , Phys. Rev. B 70, 035406 (2004)]. In this work, effects of the addition of hydrogen in the deposition gas mixture on the structures of carbon nitride thin films prepared by magnetron sputtering were investigated using Raman spectroscopy. Raman measurements showed that the structures of carbon nanoclusters remained unaffected by the addition of hydrogen in the carbon nitride films. On the other hand, the structures of amorphous thin films were affected by the addition of hydrogen in the deposition gas mixture. These are explained in terms of changes in the ratios of the D-peak to the G-peak intensities and shifts in the G-peak centers.
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