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Träfflista för sökning "WFRF:(Andersson Gabriella 1972 ) srt2:(2015-2019)"

Sökning: WFRF:(Andersson Gabriella 1972 ) > (2015-2019)

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1.
  • Akansel, Serkan, et al. (författare)
  • Effect of seed layers on dynamic and static magnetic properties of Fe65Co35 thin films
  • 2018
  • Ingår i: Journal of Physics D. - : IOP Publishing. - 0022-3727 .- 1361-6463. ; 51:30
  • Tidskriftsartikel (refereegranskat)abstract
    • Fe65Co35 thin films have been deposited on SiO2 substrates using sputtering technique with different choices of seed layer; Ru, Ni82.5Fe17.5, Rh, Y and Zr. Best soft magnetic properties were observed with seed layers of Ru, Ni82.5Fe17.5 and Rh. Adding these seed layers, the coercivity of the Fe65Co35 films decreased to values of around 1.5 mT, which can be compared to the value of 12.5 mT obtained for films deposited without seed layer. Further investigations were performed on samples with these three seed layers in terms of dynamic magnetic properties, both on as prepared and annealed samples, using constant frequency cavity and broadband ferromagnetic resonance measurements. Damping parameters of around 8.0X10-3 and 4.5X10-3 were obtained from in-plane and out-of-plane measurements, respectively, for as prepared samples, values that were reduced to 6.5X10-3 and 4.0X10-3 for annealed samples.
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2.
  • Frisk, Andreas, 1983-, et al. (författare)
  • Composition, structure and magnetic properties of ultra-thin Fe/Ni multilayers sputter deposited on epitaxial Cu/Si(001)
  • 2018
  • Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 646, s. 117-125
  • Tidskriftsartikel (refereegranskat)abstract
    • Sputter deposited symmetric multilayers of (n Fe)/(n Ni), with individual thicknesses from n = 4 to n = 48 monolayers (ML), were deposited on epitaxial Cu/Si(001), and their microstructural evolution and magnetic properties versus n have been studied. Elemental layering can be seen with transmission electron microscopy down to n = 4 ML layer thickness, although an intermixed region characterized by a finite interface width is found to be present. This width is composed of the interface roughness as well as the interdiffusion between layers, but the relative contributions from these two sources could not be concluded by the techniques used. The measured elemental layering and X-ray reflectivity (XRR) give an upper limit to the interface width which must be smaller than the thinnest layers, 4 ML. Electron energy loss spectroscopy (EELS), depth profiling X-ray photoelectron spectroscopy (XPS) and also XRR reveal that Fe has a higher tendency to mix with Ni than vice versa. XPS does not have the resolution to measure this thin elemental layering: composition variations for n = 8 ML which are clearly seen by EELS are barely resolved by XPS. The structure was determined by X-ray diffraction, and an epitaxial fcc (001) structure is found to be maintained throughout the multilayers up to n less than or similar to 8 ML. For larger n values, relaxation starts by Fe-fcc(001) layers changing into Fe-bcc(110), which is then followed by Ni-fcc(001) changing from (001) to (111) orientation along the growth direction. A decreased total measured magnetic moment for the fully epitaxial multilayers can be explained by the fcc Fe layers being partly anti-ferromagnetic, whereas the relaxed multilayers exhibit the expected magnetic properties of (bcc Fe) +(fcc Ni).
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3.
  • Frisk, Andreas, et al. (författare)
  • Magnetic and structural characterization of CoFeZr thin films grown by combinatorial sputtering
  • 2019
  • Ingår i: Physical Review Materials. - 2475-9953. ; 3:7
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on a detailed investigation of structural and magnetic properties of thin CoFeZr films, produced by combinatorial cosputtering, with compositions in the ranges 30-85 at.% Co, 12-63 at.% Fe, and 4-8 at.% Zr. Extended x-ray absorption fine structure and x-ray diffraction measurements reveal that alloys with a Zr content below 5 at.% are polycrystalline with a bcc structure, while an amorphous morphology is stabilized at Zr contents above 6 at.%. All samples display a growth-induced in-plane uniaxial anisotropy, which is closely related to the Zr concentration gradients across the wafers. A model for the angular dependence of the reduced remanence, including a Gaussian distribution of easy/hard anisotropy axes, is presented and successfully used to fit the data for all samples. The magnetic moments of the polycrystalline films approximately follow the Slater-Pauling curve, and the magnetic moments of the amorphous films follow a similar trend, but with about 20 % lower values. X-ray magnetic circular dichroism measurements show, for the amorphous films, that the Co moments are virtually constant at 1.7(2)μB/atom.
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4.
  • Frisk, Andreas, et al. (författare)
  • Strain Engineering for Controlled Growth of Thin-Film FeNi L10
  • 2017
  • Ingår i: Journal of Physics D. - : IOP Publishing. - 0022-3727 .- 1361-6463. ; 50:8
  • Tidskriftsartikel (refereegranskat)abstract
    • FeNi thin films in the L1(0) phase were successfully grown by magnetron sputtering on HF-etched Si(001) substrates on Cu/Cu100-xNix buffers. The strain of the FeNi layer, (c/a)(FeNi), was varied in a controlled manner by changing the Ni content of the Cu100-xNix buffer layer from x = 0 at.% to x = 90 at.%, which influenced the common in- plane lattice parameter of the CuNi and FeNi layers. The presence of the L1(0) phase was confirmed by resonant x-ray diffraction measurements at various positions in reciprocal space. The uniaxial magnetocrystalline anisotropy energy K-U is observed to be smaller (around 0.35 MJ m(-3)) than predicted for a perfect FeNi L1(0) sample, but it is larger than for previously studied films. No notable variation in K-U with strain state (c/a)(FeNi) is observed in the range achieved (0.99 less than or similar to (c/a)(FeNi) less than or similar to 1.02), which is in agreement with theoretical predictions.
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  • Resultat 1-4 av 4

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