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- Andersson, Johan, et al.
(författare)
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SICStus Prolog user's manual, version 2.1 #8
- 1993. - 1
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Rapport (övrigt vetenskapligt/konstnärligt)abstract
- This Manual corresponds to SICStus Prolog release 2.1. #8 Prolog is a simple but powerful programming language developed at the University of Marseilles (Prolog : Manuel de Reference et d'Utilisation by P.Roussel, Groupe d'Intelligence Artificielle, Marseille-Luminy, 1975), as a practical tool for programming in Logic (Logic for Problem Solving by R.A. Kowalski, DCL Memo 75, Dept. of Artificial Intelligence, University of Edinburgh, March, 1974.)) From a user's point of view the major attraction of the language is ease of programming. Clear, readable, concise programs can be written quickly with few errors. This manual describes a Prolog system developed at the Swedish Institute of Computer Science in collaboration with Ericsson Telecom AB, NobelTech Systems AB, Infologics AB and Televerket under the IT4 program. The system consists of a WAM emulator written in C, a library and runtime system written in C and Prolog and an interpreter and a compiler written in Prolog. The Prolog engine is a Warren Abstract Machine (WAM) emulator defined by D:H:D: Warren in An Abstract Prolog Instruction Set, Tech. Note 309, International, Menlo Park, CA, 1983. Two modes of compilation are available: in-core i.e. incremental, and file-to-file.
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- Bergh, Mats, 1968, et al.
(författare)
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The influence of surface micro-roughness on bondability
- 1995
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Ingår i: Proceedings of the Third International Symposium on Semiconductor Wafer Bonding: Physics and Applications. ; , s. 126-
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Konferensbidrag (refereegranskat)abstract
- The requirements on a surface in terms of micro-roughness necessary to achieve spontaneous bonding on wafer contact have been investigated. Wafers from four different manufacturers, all having their special surface characteristics, were evaluated using atomic force microscopy. Their room temperature bondability was investigated using the contact wave velocity and the surface energy of the formed bond as parameters. Different wet cleaning procedures were used to modify the micro-roughness of the silicon surface. It is found that the surface rms roughness value is not a good measure for judging the bondability of a surface. Instead we propose the use of the Fourier spectrum of the surface roughness. The occurrence of low, ~0.001 Å-1, spatial frequency components of large amplitude in the Fourier spectrum of the surface roughness may affect the bondability of the surface negatively while higher frequency components are not as important
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