| 1. |
- Jurgilaitis, Andrius, et al.
(författare)
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Time-Resolved X-ray Diffraction Investigation of the Modified Phonon Dispersion in InSb Nanowires
- 2014
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Ingår i: Nano letters (Print). - Washington, DC : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 14:2, s. 541-546
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Tidskriftsartikel (refereegranskat)abstract
- The modified phonon dispersion is of importance for understanding the origin of the reduced heat conductivity in nanowires. We have measured the phonon dispersion for 50 nm diameter InSb (111) nanowires using time-resolved X-ray diffraction. By comparing the sound speed of the bulk (3880 m/s) and that of a classical thin rod (3600 m/s) to our measurement (2880 m/s), we conclude that the origin of the reduced sound speed and thereby to the reduced heat conductivity is that the C44 elastic constant is reduced by 35% compared to the bulk material. © 2014 American Chemical Society.
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| 2. |
- Karthik, K. R. G., et al.
(författare)
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Physical and Electrical Properties of Single Zn2SnO4 Nanowires
- 2011
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Ingår i: Electrochemical and solid-state letters. - Pennington, NJ : Electrochemical Society. - 1099-0062 .- 1944-8775. ; 14:1, s. K5-K7
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Tidskriftsartikel (refereegranskat)abstract
- Electrical characterizations of single Zn2SnO4 (ZTO) nanowire devices are presented. These include resistivity, mobility, and photosensing measurements. The resistivity and the mobility of the Zn2SnO4 nanowire were measured to be 5.6 cm and 0.2 cm2/Vs, respectively. These values were found to be strongly dependent on the amount of electron-donating defects and less dependent on the thickness of the nanowires. An increase in the resistivity when changing the ambient atmosphere is observed. This change is caused by defect states lying in the bandgap, as shown by photoluminescence. The results imply the potential of ZTO nanowires as phototransistors and other photosensitive devices. © 2010 The Electrochemical Society.
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| 3. |
- Mathews, Nripan, et al.
(författare)
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Oxide nanowire networks and their electronic and optoelectronic characteristics
- 2010
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Ingår i: Nanoscale. - Cambridge : RSC Publishing. - 2040-3364 .- 2040-3372. ; 2:10, s. 1984-1998
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Tidskriftsartikel (refereegranskat)abstract
- Oxide nanowire networks or oxide nanonets leverage some of the exceptional functionalities of one-dimensional nanomaterials along with the fault tolerance and flexibility of interconnected nanowires to creating exciting opportunities in large-area electronics as well as green energy systems. This paper reviews the electronic and optoelectronic properties of these networks and highlights their potential applications in field-effect transistors, optoelectronic devices, and solar cells. Techniques to grow nanowires and their subsequent integration into networks using contact printing and electrospinning are described. Electrical properties of field-effect transistors fabricated from contact printed nanowire networks are discussed, and means of integration of the nanowire networks of heterogenous materials that enable ambipolar device operation are outlined. Photocurrent properties of these nanowires are described, including the dye sensitization of large-bandgap SnO2 nanowires. The final section deals with the advantages of employing nanowire networks in dye-sensitized solar cells and the dependence of solar cell performance on morphology and surface area. © The Royal Society of Chemistry 2010.
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| 4. |
- Pham, Thien Viet, et al.
(författare)
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Photocarrier generation in CuxO thin films deposited by radio frequency sputtering
- 2013
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Ingår i: Applied Physics Letters. - College Park, MD : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 102:3, s. Article number: 032101-
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Tidskriftsartikel (refereegranskat)abstract
- Copper oxides (CuxO) thin films were deposited using radio frequency (RF) sputtering on glass substrates. By tuning the argon (Ar) partial pressure during deposition, cuprous oxide (Cu2O), cupric oxide (CuO), or their mixed phase could be achieved. Drastic variations in the Hall mobility, hole density, and resistivity of the samples were observed due to the presence of different phases in the films. Kelvin probe studies indicate that the photo-generated carriers have lower recombination rate in pure Cu 2O phase. This was further validated by transient absorption measurements, where the estimated carrier lifetime for Cu2O was much larger that other phases. © 2013 American Institute of Physics.
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