| 1. |
- Aamodt, K., et al.
(författare)
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The ALICE experiment at the CERN LHC
- 2008
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Ingår i: Journal of Instrumentation. - 1748-0221. ; 3:S08002
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Forskningsöversikt (refereegranskat)abstract
- ALICE (A Large Ion Collider Experiment) is a general-purpose, heavy-ion detector at the CERN LHC which focuses on QCD, the strong-interaction sector of the Standard Model. It is designed to address the physics of strongly interacting matter and the quark-gluon plasma at extreme values of energy density and temperature in nucleus-nucleus collisions. Besides running with Pb ions, the physics programme includes collisions with lighter ions, lower energy running and dedicated proton-nucleus runs. ALICE will also take data with proton beams at the top LHC energy to collect reference data for the heavy-ion programme and to address several QCD topics for which ALICE is complementary to the other LHC detectors. The ALICE detector has been built by a collaboration including currently over 1000 physicists and engineers from 105 Institutes in 30 countries, Its overall dimensions are 16 x 16 x 26 m(3) with a total weight of approximately 10 000 t. The experiment consists of 18 different detector systems each with its own specific technology choice and design constraints, driven both by the physics requirements and the experimental conditions expected at LHC. The most stringent design constraint is to cope with the extreme particle multiplicity anticipated in central Pb-Pb collisions. The different subsystems were optimized to provide high-momentum resolution as well as excellent Particle Identification (PID) over a broad range in momentum, up to the highest multiplicities predicted for LHC. This will allow for comprehensive studies of hadrons, electrons, muons, and photons produced in the collision of heavy nuclei. Most detector systems are scheduled to be installed and ready for data taking by mid-2008 when the LHC is scheduled to start operation, with the exception of parts of the Photon Spectrometer (PHOS), Transition Radiation Detector (TRD) and Electro Magnetic Calorimeter (EMCal). These detectors will be completed for the high-luminosity ion run expected in 2010. This paper describes in detail the detector components as installed for the first data taking in the summer of 2008.
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| 2. |
- Crupi, G., et al.
(författare)
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Purely analytical extraction of an improved nonlinear FinFET model including non-quasi-static effects
- 2009
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317. ; 86:11, s. 2283-2289
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Tidskriftsartikel (refereegranskat)abstract
- An analytical procedure is proposed for extracting a new nonlinear FinFET model, which accounts for non-quasi static effects. The accuracy and the robustness of the obtained nonlinear model are completely validated through the comparison between simulated and measured device behaviour in both linear and nonlinear cases. This study clearly shows that the inclusion of the non-quasi-static phenomena leads to significant model simulation improvements, which become more pronounced at higher frequency. (C) 2009 Elsevier B.V. All rights reserved.
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| 3. |
- Abbasi, Morteza, 1982, et al.
(författare)
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Single-Chip Frequency Multiplier Chains for Millimeter-Wave Signal Generation
- 2009
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 57:12, s. 3134-3142
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Tidskriftsartikel (refereegranskat)abstract
- Two single-chip frequency multiplier chains targeting 118 and 183 GHz output frequencies are presented. The chips are fabricated in a 0.1 mu m GaAs metamorphic high electron-mobility transistor process. The D-band frequency doubler chain covers 110 to 130 GHz with peak output power of 5 dBm. The chip requires 2 dBm input power and consumes only 65 mW of dc power. The signal at the fundamental frequency is suppressed more than 25 dB compared to the desired output signal over the band of interest. The G-band frequency sextupler (x6) chain covers 155 to 195 GHz with 0 dBm peak output power and requires 6.5 dBm input power and 92.5 mW dc power. The input signal to the multiplier chain can be reduced to 4 dBm while the output power drops only by 0.5 dB. The unwanted harmonics are suppressed more than 30 dB compared to the desired signal. An additional 183 GHz power amplifier is presented to be used after the x6 frequency multiplier chain if higher output power is required. The amplifier delivers 5 dBm output power with a small-signal gain of 9 dB from 155 to 195 GHz. The impedance matching networks are realized using coupled transmission lines which is shown to be a scalable and straightforward structure to use in amplifier design. Microstrip transmission lines are used in all the designs.
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| 4. |
- Angelov, Iltcho, 1943, et al.
(författare)
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Large signal evaluation of nonlinear HBT model
- 2007
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Ingår i: IEICE Transactions on Electronics. - : Institute of Electronics, Information and Communications Engineers (IEICE). - 0916-8524 .- 1745-1353. ; E91C:7, s. 1091-1097
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Konferensbidrag (refereegranskat)abstract
- The performance of recently developed Large Signal (LS) HBT model was evaluated with extensive LS measurements like Power spectrum, Load pull and Inter-modulation investigations. Proposed model has adopted temperature dependent leakage resistance and a simplified capacitance models. The model was implemented in ADS as SDD. Important feature of the model is that the main model parameters are taken directly from measurements in rather simple and understandable way. Results show good accuracy despite the simplicity of the model. To our knowledge the HBT model is one of a few HBT models which can handle high current & Power HBT devices, with significantly less model parameters with good accuracy.
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| 5. |
- Crupi, G., et al.
(författare)
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Analysis of quasi-static assumption in nonlinear finFET model
- 2008
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Ingår i: 2008 17th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2008. - 9788390666280
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Konferensbidrag (refereegranskat)abstract
- The construction and validation of a quasi-static nonlinear microwave model for FinFETs are investigated. A very good agreement between model simulations and measurements is obtained under different DC bias points, input power levels, fundamental frequencies up to 5 GHz, and device geometries. Since the intrinsic part of the FET model is based on the quasi-static approximation, the goal of this work is to analyze in detail the limitations of this assumption by examining the intrinsic admittance parameters versus the frequency.
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| 6. |
- Crupi, G., et al.
(författare)
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Combined empirical and look-up table approach for non-quasi-static modelling of GaN HEMTs
- 2009
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Ingår i: 9th International Conference on Telecommunications in Modern Satellite, Cable, and Broadcasting Services, TELSIKS 2009 - Proceedings of Paper. - 9781424443833 ; , s. 40-43
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Konferensbidrag (refereegranskat)abstract
- In this paper the empirical and the look-up table approaches are combined to accurately model a gallium nitride based HEMT on silicon carbide. That solution allows to exploit the advantages of both approaches. The validity of the extracted model is verified by comparing model simulations with DC and microwave measurements.
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| 7. |
- Crupi, G., et al.
(författare)
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Non-linear FinFET Modeling: Lookup Table and Empirical Approaches
- 2008
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Ingår i: International Journal of Microwave and Optical Technology. - 1553-0396. ; 3:3, s. 157-164
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Tidskriftsartikel (refereegranskat)abstract
- The non-linear microwave modeling of advanced transistors is becoming more and more essential to the design and fabrication processes. Consequently, this study is focused on the equivalent circuit based non-linear microwave modeling of FinFET. An accurate multi-bias small signal equivalent circuit is extracted and subsequently used for analytically constructing a non-linear full blown lookup table model. Furthermore, an alternative model implementation, which is based on empirical expressions, is investigated. The validity of both non-linear modeling approaches is confirmed by the good agreement between model simulations and large signal measurements.
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| 8. |
- Medina, M. A.Yarleque, et al.
(författare)
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Doherty amplifier design for 3.5 GHz WiMAX considering load line and loop stability
- 2008
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Ingår i: 2008 European Microwave Integrated Circuit Conference, EuMIC 2008; Amsterdam; Netherlands; 27 October 2008 through 31 October 2008. - 9782874870071 ; , s. 1549-1552
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Konferensbidrag (refereegranskat)abstract
- Legacy Doherty amplifier is characterized by using a larger transistor for the peak amplifier such that this reaches saturation with a smaller excitation signal. However due to device availability and modelling considerations, this is not often feasible. In this paper, the design and measurement of a Doherty amplifier utilizing only single sized device is realized. Unlike previous research works, intrinsic load line is utilized to tune the offset lines, as well as to verify the actual dynamic load principle. Stability aspects are covered for this type of amplifier, which are not normally included in earlier works. Finally an assessment of its applicability and benefits for WiMAX at 3.5 GHz is realized using a class AB amplifier as a comparison basis.
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| 9. |
- Zirath, Herbert, 1955, et al.
(författare)
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Integrated receivers up to 220 GHz utilizing GaAs-mHEMT technology
- 2009
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Ingår i: 2009 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2009; Singapore; Singapore; 9 January 2009 through 11 January 2009. - 9781424450305 ; , s. 225-228
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Konferensbidrag (refereegranskat)abstract
- The status of integrated receivers for remote sensing and communication applications from 60 GHz to higher frequencies is reviewed. Recent receiver results for silicon and III-V technologies are compared with Schottky diode receivers.
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| 10. |
- Zirath, Herbert, 1955, et al.
(författare)
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On the status of Low Noise Millimeterwave MMIC Receivers
- 2009
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Ingår i: APMC: 2009 ASIA PACIFIC MICROWAVE CONFERENCE. - 9781424428014 ; 1-5, s. 1303-1306
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- The status of integrated receivers for remote sensing and communication applications from 60 GHz to higher frequencies is reviewed. Recent receiver results for silicon and technologies are compared with Schottky diode receivers.
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