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- Avolio, G., et al.
(författare)
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A procedure for the extraction of a nonlinear microwave GaN FET model
- 2017
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Ingår i: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. - : Wiley. - 0894-3370 .- 1099-1204. ; 30:1, s. UNSP e2151-
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, we describe an extraction procedure of nonlinear models for microwave field-effect transistor (FET). We use a nonlinear model available in commercial CAD tools, and we extract the parameters by combining direct extraction and numerical optimization. We determine a first estimate of the model parameters by few DC and S-parameter measurements. Next, we refine the parameters by optimization against low-frequency and high-frequency vector-calibrated large-signal measurements gathered with a Large-Signal-Network Analyzer (LSNA). As case study we consider a 0.25x200 mu m(2) GaN FET on SiC for power amplifier applications. Ultimately, we want to show that a good accuracy level can be achieved while minimizing the extraction effort and that an accurate model can be built and suitably tailored depending on the final application.
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