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Träfflista för sökning "WFRF:(Anghel C) srt2:(2006-2009)"

Sökning: WFRF:(Anghel C) > (2006-2009)

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2.
  • Hultquist, Gunnar, et al. (författare)
  • Effects of O-2 dissociation on a porous platinum coating in the thermal oxidation of GaAs
  • 2006
  • Ingår i: Journal of the Electrochemical Society. - : The Electrochemical Society. - 0013-4651 .- 1945-7111. ; 153:2, s. G182-G186
  • Tidskriftsartikel (refereegranskat)abstract
    • A 20-30-nm-thick porous Pt layer has been sputter-coated on a portion of a GaAs sample and subsequently the sample was oxidized at 500 degrees C in O-16(2) followed by O-18-enriched O-2. The oxide formed was characterized by Auger electron spectroscopy, secondary ion mass spectrometry, and X-ray photoelectron spectroscopy, all with a lateral resolution of about 100 mu m. Away from the Pt area, a mm-ranged gradually decreasing degree of As oxidation was observed in the outermost oxide layer. In the Pt area, Ga was preferentially oxidized at the oxide/substrate interface producing a five to seven times thicker oxide than in an area without the influence of Pt. A strongly enhanced dissociation rate of O-2 on Pt particles and a subsequent O spillover to adjacent oxide explain the experimental observations. The mm-ranged spillover is believed to take place via fast lateral surface diffusion and results in the observed variation of oxidized As at the gas/oxide interface. In the Pt area, a high concentration gradient of dissociated oxygen across the oxide layer supplies a high flux of dissociated oxygen to the GaAs substrate where Ga is preferentially oxidized. The results clearly demonstrate that both a surface reaction and solid-state diffusion influence the oxidation rate. A localized high effective oxygen (O) activity that spills over to a nearby oxide area is believed to be a general phenomenon that is operating in oxides where a dissociating element such as Pt is present at O-2/oxide interfaces.
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3.
  • Lungu, C. P., et al. (författare)
  • Beryllium coatings on metals for marker tiles at JET : development of process and characterization of layers
  • 2007
  • Ingår i: Physica Scripta. - 0031-8949 .- 1402-4896. ; T128, s. 157-161
  • Tidskriftsartikel (refereegranskat)abstract
    • Preparatory study for the operation of the JET tokamak with a full metal wall (ITER-like wall project) also comprises several activities aiming at the development of thin beryllium coatings. The purpose is 2-fold: ( i) to coat Inconel (R) tiles of the inner wall cladding; (ii) to develop methods for production of films for so-called marker tiles in order to enable monitoring of Be erosion from limiters. Properties of the marker film must match, as closely as possible, those of bulk Be. The first step in the R&D process was to assess coating methods and the quality of layers deposited on test coupons. Smooth, dense Be films of high purity and good adhesion to the substrate were deposited with an average deposition rate of 5 +/- 0.5 nm s(-1) to a thickness of 7.5 mu m. A marker structure consisting of a 7.5 mu m Be film on top of a 2.5 mu m Ni interlayer deposited on a bulk Be block has been developed and characterized by means of material analysis methods. An overview of manufacturing processes and properties of the marker coatings is presented.
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