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- Paskova, Tanja, et al.
(författare)
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Donor-acceptor pair emission enhancement in mass-transport-grown GaN
- 2005
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 98:3, s. 033508-
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Tidskriftsartikel (refereegranskat)abstract
- A dominating donor-acceptor pair (DAP) emission at about 3.27 eV is observed in the photoluminescence and cathodoluminescence spectra of intentionally undoped mass-transport (MT)-grown GaN, while only a weak presence of the DAP emission is recorded in the as-grown hydride vapor phase epitaxial GaN. A comparative study of impurity and native defect incorporation in the as-grown and MT GaN was performed, showing a significant increase of oxygen and empty clusters involving Ga vacancy and oxygen in the MT GaN. Based on the observed results as well as on doping analysis of the structure and kinetic analysis of the emission intensities, we propose an acceptorlike complex, creating a state as a semiclassical potential well near the valence-band top due to the local tensile strain caused by the empty clusters to be responsible for the dominating behavior of the DAP emission. © 2005 American Institute of Physics.
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- Paskova, Tanja, et al.
(författare)
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Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers
- 2005
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248 .- 1873-5002. ; 281:1, s. 55-61
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Tidskriftsartikel (refereegranskat)abstract
- The influence of high temperature AlN buffer layers on the morphology, structural and optical characteristics of a-plane GaN grown by hydride vapour phase epitaxy on r-plane sapphire was investigated. While the morphology of the a-GaN was found to be significantly improved by using a-plane AlN buffer layer similarly to the effect observed in c-plane hydride vapour phase epitaxy GaN growth, the microstructure ensemble was revealed to be more complicated in comparison to that of the c-plane GaN. Higher dislocation density and prismatic stacking faults were observed. Moreover, in-plane anisotropic structural characteristics were revealed by high resolution X-ray diffraction employing azimuthal dependent and edge X-ray measurement symmetric geometry. In addition, the near band edge photo luminescence peaks, red-shifted with respect to that in c-plane GaN were observed. The latter were explained by the influence of the higher defect density and more complex strain distribution. (c) 2005 Elsevier B.V. All rights reserved.
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