| 1. |
- Agaton, C., et al.
(författare)
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Affinity proteomics for systematic protein profiling of chromosome 21 gene products in human tissues
- 2003
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Ingår i: Molecular & Cellular Proteomics. - 1535-9476 .- 1535-9484. ; 2, s. 405-
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Tidskriftsartikel (refereegranskat)abstract
- Here we show that an affinity proteomics strategy using affinity-purified antibodies raised against recombinant human protein fragments can be used for chromosome-wide protein profiling. The approach is based on affinity reagents raised toward bioinformatics-designed protein epitope signature tags corresponding to unique regions of individual gene loci. The genes of human chromosome 21 identified by the genome efforts were investigated, and the success rates for de novo cloning, protein production, and antibody generation were 85, 76, and 56%, respectively. Using human tissue arrays, a systematic profiling of protein expression and subcellular localization was undertaken for the putative gene products. The results suggest that this affinity proteomics strategy can be used to produce a proteome atlas, describing distribution and expression of proteins in normal tissues as well as in common cancers and other forms of diseased tissues.
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| 2. |
- Hammar, M., et al.
(författare)
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1300-nm GaAs-based vertical-cavity lasers
- 2002
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - Brugge : SPIE. ; , s. 137-149
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Konferensbidrag (refereegranskat)abstract
- We compare GaInNAs and highly strained InGaAs quantum-wells (QWs) for applications in metal-organic vapor-phase epitaxy (MOVPE)-grown GaAs-based 1300-nm vertical-cavity lasers (VCLs). While the peak wavelength of InGaAs QWs can be extended by a small fraction of N, the luminescence efficiency degrades strongly with wavelength. On the other hand, using highly strained InGaAs QWs in combination with a large VCL detuning it is also possible to push the emission wavelength towards 1.3 ÎŒm. The optimized MOVPE growth conditions for such QW and VCL structures are discussed in some detail. It is noted that GaInNAs and InGaAs QWs preferably are grown at low temperature, but with quite different V/III ratios and growth rates. We also point out the importance of reduced doping concentration and growth temperature of the n-doped bottom distributed Bragg reflector to minimize optical loss and for compatibility with GaInNAs QWs. InGaAs VCLs with emission wavelengths beyond 1260 nm are demonstrated. This includes mW-range output power, mA-range threshold current and 10 Gb/s data transmission.
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| 3. |
- Largeau, L., et al.
(författare)
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Structural effects of the thermal treatment on a GaInNAs/GaAs superlattice
- 2001
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 79:12, s. 1795-1797
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Tidskriftsartikel (refereegranskat)abstract
- We have studied structural changes that occur during annealing of GaInNAs/GaAs multiple quantum wells grown by metalorganic vapor-phase epitaxy (MOVPE). Different thermal treatments led to an improved room-temperature photoluminescence (PL) intensity, but also to room-temperature PL peak splitting. This splitting is related to the appearance of compositional clustering as displayed by transmission electron microscopy (TEM). In addition to this, interfacial layers on each side of the wells have also been observed by,TEM and their composition is discussed on the basis of high resolution x-ray diffraction studies. It is suggested that the interface layers are indium deficient, but enriched in nitrogen, degrading the optical quantum well performance and indicating a need for improved switching sequences in the MOVPE growth.
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| 4. |
- Mogg, S., et al.
(författare)
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1.3-ÎŒm InGaAs(N)/GaAs vertical-cavity lasers
- 2003
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - San Jose, CA : SPIE. ; , s. 139-151
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Konferensbidrag (refereegranskat)abstract
- In this work we present performance characteristics of metalorganic vapor-phase epitaxy grown GaInNAs and InGaAs quantum-well (QW) vertical-cavity lasers (VCLs) for 1.3-Όm applications. The InGaAs VCLs emit in a wavelength range from 1200 to somewhat above 1260 nm, while the GaInNAs VCLs operate from 1265 to 1303 nm. The InGaAs VCLs are based on highly strained InGaAs double QWs, with photoluminescence (PL) maximum at around 1190 nm, and extensive negative gain-cavity detuning. As a consequence, these devices are strongly temperature sensitive and the minimum threshold current is found at very high temperature (∌90-100°C). Both kind of VCLs work continuous-wave well above 100°C, and while the InGaAs VCLs reach slightly higher light output power, they show significantly larger threshold currents. In addition, the large device detuning also has profound effects on the high-frequency response. Nevertheless, for a 1260-nm device, 10 Gb/s transmission is demonstrated in a back-to-back configuration. We also show that by further optimization of the InGaAs QWs the PL peak wavelength can be extended to at least 1240 nm. The incorporation of such QWs in the present VCL structure should considerably improve the device performance, resulting in higher light output power, lower threshold current, and reduced temperature sensitivity with a shift of the minimum threshold current towards room temperature, thus approaching standard VCL tuning.
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| 5. |
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| 6. |
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| 7. |
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| 8. |
- Asplund, Carl, et al.
(författare)
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1260 nm InGaAs vertical-cavity lasers
- 2002
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 38:13, s. 635-636
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Tidskriftsartikel (refereegranskat)abstract
- The fabrication and performance of highly strained double-quantum well InGaAs/GaAs vertical-cavity lasers with record-long emission wavelength of 1260 nm at room temperature is reported. Depending on device diameter, the minimum threshold current is in the low mA-regime while the maximum output power exceeds 1 mW. The devices work continuous-wave over a wide temperature range of at least 10-120degrees C.
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| 9. |
- Asplund, C., et al.
(författare)
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Doping-induced losses in AlAs/GaAs distributed Bragg reflectors
- 2001
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 90:2, s. 794-800
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Tidskriftsartikel (refereegranskat)abstract
- We have studied n- and p-type doping-induced performance degradation of AlAs/GaAs distributed Bragg reflectors (DBRs) for applications in vertical cavity lasers (VCLs). Based on high-accuracy optical reflectance and triple-axis x-ray diffraction measurements on a variety of differently doped DBR structures grown by metalorganic vapor-phase epitaxy, a fitting procedure was employed to extract the doping-dependent optical loss. A striking observation is that the reflectance of these DBRs is much more sensitive to n- than p-type doping incorporation. While in the latter case the loss can be well accounted for by intervalence-band and free-carrier absorption, additional loss mechanisms must be considered for n-type DBRs. We relate the losses to doping-enhanced interdiffusion effects resulting in increased interface scattering. These findings should have important consequences for the design of VCLs, demonstrating the importance of reduced n-type doping concentrations and/or growth temperatures, or the application of alternative device concepts, e.g., employing intracavity contacts.
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| 10. |
- Gustafsson, Anna C., et al.
(författare)
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The role of p53 codon 72 and human papilloma virus status of cutaneous squamous cell carcinoma in the Swedish population
- 2004
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Ingår i: Acta Dermato-Venereologica. - : Medical Journals Sweden AB. - 0001-5555 .- 1651-2057. ; 84:6, s. 439-444
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Tidskriftsartikel (refereegranskat)abstract
- The arginine variant of the p53 codon 72 polymorphism as well as anogenital and epidermodysplasia verruciformis (EV) types of human papilloma virus (HPV) are suggested to confer increased risk for developing cutaneous squamous cell carcinoma (SCC). In this pilot study, we analysed the p53 codon 72 genotype distribution in 106 microdissected samples from normal and tumour tissues of 53 cases of cutaneous SCC and 96 controls from Sweden. Both normal and tumour samples from cases of SCC were screened for anogenital and EV HPV. The p53(Arg) allele was not associated with the development of cutaneous SCC. Anogenital HPV (44%) was more prevalent than EV HPV (12%). Data also indicate that anogenital HPV is more common in tumour samples, but HPV infection was not identified as a significant risk factor for developing SCC. The presence of anogenital HPV, but not EV HPV might be a risk factor for development of cutaneous SCC.
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