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Sökning: WFRF:(Athle Robin) > (2021)

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1.
  • Athle, Robin, et al. (författare)
  • Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf1-xZrxO2
  • 2021
  • Ingår i: ACS applied materials & interfaces. - : American Chemical Society (ACS). - 1944-8244 .- 1944-8252. ; 13:9, s. 11089-11095
  • Tidskriftsartikel (refereegranskat)abstract
    • Ferroelectric memories based on hafnium oxide are an attractive alternative to conventional memory technologies due to their scalability and energy efficiency. However, there are still many open questions regarding the optimal material stack and processing conditions for reliable device performance. Here, we report on the impact of the sputtering process conditions of the commonly used TiN top electrode on the ferroelectric properties of Hf1-xZrxO2. By manipulating the deposition pressure and chemistry, we control the preferential orientation of the TiN grains between (111) and (002). We observe that (111) textured TiN is superior to (002) texturing for achieving high remanent polarization (Pr). Furthermore, we find that additional nitrogen supply during TiN deposition leads to >5× greater endurance, possibly by limiting the scavenging of oxygen from the Hf1-xZrxO2 film. These results help explain the large Pr variation reported in the literature for Hf1-xZrxO2/TiN and highlights the necessity of tuning the top electrode of the ferroelectric stack for successful device implementation.
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2.
  • Menon, Heera, et al. (författare)
  • Improved quality of InSb-on-insulator microstructures by flash annealing into melt
  • 2021
  • Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 32:16
  • Tidskriftsartikel (refereegranskat)abstract
    • Monolithic integration of III-V semiconductors with Silicon technology has instigated a wide range of new possibilities in the semiconductor industry, such as combination of digital circuits with optical sensing and high-frequency communication. A promising CMOS compatible integration process is rapid melt growth (RMG) that can yield high quality single crystalline material at low cost. This paper represents the study on ultra-thin InSb-on-insulator microstructures integrated on a Si platform by a RMG-like process. We utilize flash lamp annealing (FLA) to melt and recrystallize the InSb material for an ultra-short duration (milliseconds), to reduce the thermal budget necessary for integration with Si technology. We compare the result from FLA to regular rapid thermal annealing (seconds). Recrystallized InSb was characterized using electron back scatter diffraction which indicate a transition from nanocrystalline structure to a crystal structure with grain sizes exceeding 1 μm after the process. We further see a 100× improvement in electrical resistivity by FLA annealed sample when compared to the as-deposited InSb with an average Hall mobility of 3100 cm2 V−1 s−1 making this a promising step towards realizing monolithic mid-infrared detectors and quantum devices based on InSb.
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  • Resultat 1-2 av 2
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refereegranskat (2)
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Borg, Mattias (2)
Athle, Robin (2)
Menon, Heera (2)
Johansson, Jonas (1)
Persson, Anton E. O. (1)
Irish, Austin (1)
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Timm, Rainer (1)
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