| 1. |
- Gustavsson, Johan, 1974, et al.
(författare)
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Silicon integrated 850-nm hybrid vertical-cavity laser for life science applications
- 2017
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Ingår i: VCSEL Day 2017.
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Konferensbidrag (refereegranskat)abstract
- The integration of efficient laser sources on silicon would enable fully integrated silicon photonic circuits with a high degree of functionality and performance complexity for many applications [1]. Different integration concepts have therefore been suggested, where one such technique is the heterogeneous integration of a vertical-cavity laser (VCL), referred to as a hybrid VCL. It is promising as it has potential to offer low drive currents, high modulation bandwidths, and small footprint [2-4]. In-plane emission with waveguide-coupling can be achieved by an intra-cavity waveguide embossed with a weak diffraction grating, as an example [5]. Integration of such short-wavelength laser sources on a silicon-nitride (SiN) waveguide platform on silicon may enable fully integrated silicon photonic circuits for applications not only in short-reach optical interconnects but also in life science and bio-photonics. As a first step in realizing short-wavelength hybrid VCLs with in-plane emission coupled to a SiN waveguide, we have developed a technique to produce high performance 850-nm hybrid VCLs with out-of-plane emission. It is based on adhesive bonding of epitaxial AlGaAs-material onto a dielectric distributed Bragg reflector (DBR) on silicon [6-8]. We have fabricated devices with surface emission having sub-mA threshold current, >2 mW output power, and 25 Gbit/s modulation speed [8]. To be able to demonstrate in-plane emission with SiN waveguide coupling from our hybrid 850-nm VCLs, our next step is to add a SiN waveguide structure with embossed grating on top of the dielectric DBR, before adhesively bonding the AlGaAs-material. So far, based on numerical simulations, we have designed a device that is predicted to yield a slope efficiency of ~0.3 W/A at 25 °C for the light coupled to a single-mode waveguide, while maintaining a sub-mA threshold current for the lasing [9]. This work is supported by the European Union’s Horizon 2020 research and innovation program under grant agreement no. 688519 (PIX4life), the Swedish Foundation for Strategic Research (SSF), and the European FP7-ERC-InSpectra Advanced Grant. References [1] Z. Zhou et al., Light Sci. Appl., vol. 4, no. 11, p. e358, 2015. [2] Y. Tsunemi et al., Opt. Express, vol. 21, no. 23, p. 28685, 2013. [3] J. Ferrara et al., Opt. Express, vol. 23, no. 3, p. 2512, 2015. [4] G.C. Park et al., Laser Photon. Rev., vol. 9, no. 3, p. L11, 2015. [5] D. A. Louderback et al., Electron. Lett., vol. 40, no. 17, p. 1064, 2004. [6] E.P. Haglund et al., Opt. Express, vol. 23, no. 26, p. 33634, 2015. [7] E.P. Haglund et al., IEEE Photon. Technol. Lett., vol. 28, no. 8, p. 856, 2016. [8] E.P. Haglund et al., IEEE J. Sel. Top. Quantum Electron., vol. 23, no. 6, p. 1700109, 2017. [9] S. Kumari et al., Submitted to IEEE Photon. J.,2017.
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| 2. |
- Gustavsson, Johan, 1974, et al.
(författare)
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Silicon-Integrated Hybrid-Vertical-Cavity Lasers for Life Science Applications
- 2017
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Ingår i: 2017 IEEE Photonics Conference. - 9781509065783
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Konferensbidrag (refereegranskat)abstract
- Hybrid 850-nm-wavelength vertical-cavity lasers formed by adhesively bonding AlGaAs-material to a dielectric distributed Bragg reflector on Silicon has experimentally enabled sub-mA threshold current and 25 Gb/s modulation speed. Numerical calculations estimate >0.3 mW/mA slope efficiency for in-plane SiN waveguide coupled light using an intra-cavity grating.
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| 3. |
- Haglund, Emanuel, 1988, et al.
(författare)
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Hybrid vertical-cavity laser integration on silicon
- 2017
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9781510606852 ; 10122, s. 101220H-
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Konferensbidrag (refereegranskat)abstract
- The hybrid vertical-cavity laser is a potential low current, high-efficiency, and small footprint light source for silicon photonics integration. As part of the development of such light sources we demonstrate hybrid-cavity VCSELs (HC-VCSELs) on silicon where a GaAs-based half-VCSEL is attached to a dielectric distributed Bragg reflector on silicon by adhesive bonding. HC-VCSELs at 850 nm with sub-mA threshold current, >2 mW output power, and 25 Gbit/s modulation speed are demonstrated. Integration of short-wavelength lasers will enable fully integrated photonic circuits on a silicon-nitride waveguide platform on silicon for applications in life science, bio-photonics, and short-reach optical interconnects.
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| 4. |
- Haglund, Emanuel, 1988, et al.
(författare)
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Silicon-Integrated Hybrid-Cavity 850-nm VCSELs by Adhesive Bonding: Impact of Bonding Interface Thickness on Laser Performance
- 2017
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Ingår i: IEEE Journal of Selected Topics in Quantum Electronics. - 1558-4542 .- 1077-260X. ; 23:6, s. 1700109-
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Tidskriftsartikel (refereegranskat)abstract
- The impact of bonding interface thickness on the performance of 850-nm silicon-integrated hybrid-cavity vertical-cavity surface-emitting lasers (HC-VCSELs) is investigated. The HC-VCSEL is constructed by attaching a III–V “half-VCSEL” to a dielectric distributed Bragg reflector on a Si substrate using ultrathin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding. The thickness of the bonding interface, defined by the DVS-BCB layer together with a thin SiO2 layer on the “half-VCSEL,” can be used to tailor the performance, for e.g., maximum output power or modulation speed at a certain temperature, or temperature-stable performance. Here, we demonstrate an optical output power of 2.3 and 0.9 mW, a modulation bandwidth of 10.0 and 6.4 GHz, and error-free data transmission up to 25 and 10 Gb/s at an ambient temperature of 25 and 85 °C, respectively. The thermal impedance is found to be unaffected by the bonding interface thickness.
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| 5. |
- Haglund, Emanuel, 1988, et al.
(författare)
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Silicon-integrated short-wavelength VCSELs
- 2017
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Ingår i: Proc. European Semiconductor Laser Workshop. ; , s. C21-
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Konferensbidrag (refereegranskat)abstract
- GaAs-based hybrid-cavity VCSELs integrated onto silicon by ultra-thin DVS-BCB adhesive bonding are presented. The hybrid-cavity implies that the optical field extends over both the GaAs- and the Si-based parts, which could allow a fraction of the light in the vertical-cavity to be coupled into an in-plane waveguide. Surface-emitting devices are demonstrated at ~860 nm with up to 2.3 mW optical output power and 12 GHz modulation bandwidth, providing error-free large signal data transmission up to 25 Gb/s.
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| 6. |
- Kumari, Sulakshna, et al.
(författare)
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Design of an 845-nm GaAs Vertical-Cavity Silicon-Integrated Laser with an Intracavity Grating for Coupling to a SiN Waveguide Circuit
- 2017
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Ingår i: IEEE Photonics Journal. - 1943-0655. ; 9:4, s. 1504109-
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Tidskriftsartikel (refereegranskat)abstract
- A short-wavelength hybrid GaAs vertical-cavity silicon-integrated laser (VCSIL) with in-plane waveguide coupling has been designed and optimized using numerical simulations. A shallow etched silicon nitride (SiN) grating is placed inside the cavity of the hybrid vertical-cavity silicon-integrated laser to both set the polarization state of the resonant optical field and to enable output coupling to a SiN waveguide with high efficiency. The numerical simulations predict that for apertures of 4 and 6-μm oxide-confined VCSILs operating at 845-nm wavelength, a slope efficiency for the light coupled to the waveguide of 0.18 and 0.22 mW/mA is achievable, respectively, while maintaining a low threshold gain of 583 and 589 cm−1, respectively, for the lasing.
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| 7. |
- Larsson, Anders, 1957, et al.
(författare)
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Empowering silicon with vertical-cavity lasers
- 2017
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Ingår i: Compound Semiconductor. - 1096-598X. ; 23:5, s. 40-45
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- Bringing the advantages of the VCSEL to silicon photonics with vertical-cavity lasers.
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| 8. |
- Roelkens, Gunther, et al.
(författare)
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850 nm hybrid vertical cavity laser integration for on-chip silicon photonics light sources
- 2017
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Ingår i: Optical Fiber Communication Conference (OFC), 19-23 March 2017. - 9781943580231 ; , s. W3E.6-
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Konferensbidrag (refereegranskat)abstract
- The realization of 850 nm hybrid III-V/dielectric VCSELs is reported in order to realize low power consumption integrated light sources for SiN waveguide circuits, which find applications both in short-reach optical communication and optical sensors.
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