| 1. |
- Baskar, K., et al.
(författare)
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Surface morphology and localised states of GaInNAs single quantum wells grown by MOVPE
- 2003
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Ingår i: Journal of Crystal Growth. - 0022-0248 .- 1873-5002. ; 248, s. 431-436
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Tidskriftsartikel (refereegranskat)abstract
- GaInNAs/GaAs single quantum wells (QWs) have been grown by metalorganic vapour phase epitaxy (MOVPE). The surface morphology has been studied by atomic force microscopy (AFM). The density of pits observed on the surface of QW structures was found to depend on the growth temperature and dimethylhydrazine (DMHy) flow. Cross-sectional AFM image showed the presence of defects at the interface of GaInNAs/GaAs. The low temperature photoluminescence characteristics of the QWs as a function of growth temperature. DMHy flow and density of surface pits have been discussed. The origin of pit formation is addressed based on the pyrolysis products present during the growth of QWs. The results suggest that higher growth temperature maybe desirable to obtain good quality GaInNAs QWS.
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| 2. |
- Mogg, S., et al.
(författare)
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High-performance 1.2-ÎŒm Highly strained InGaAs/GaAs quantum well lasers
- 2002
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Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - Stockholm. ; , s. 107-110
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Konferensbidrag (refereegranskat)abstract
- The growth and characterisation of high-performance 1.2-Όm highly strained InGaAs/GaAs single quantum well (SQW) laser diodes is reported. High output power in excess of 200 mW per facet was obtained from ridge-waveguide (RWG) lasers at an emission wavelength of 1230 nm. These lasers operate CW to at least 145°C and show a high characteristic temperature of 150 K. The net modal gain was measured using the method described by Hakki and Paoli.
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| 3. |
- Mogg, Sebastian, et al.
(författare)
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High-performance 1.2- mu;m highly strained InGaAs/GaAs quantum well lasers
- 2002
-
Ingår i: Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th. ; , s. 107-110
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Konferensbidrag (refereegranskat)abstract
- The growth and characterisation of high-performance 1.2- mu;m highly strained InGaAs/GaAs single quantum well (SQW) laser diodes is reported. High output power in excess of 200 mW per facet was obtained from ridge-waveguide (RWG) lasers at an emission wavelength of 1230 nm. These lasers operate CW to at least 145 deg;C and show a high characteristic temperature of 150 K. The net modal gain was measured using the method described by Hakki and Paoli (1975).
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| 4. |
- Sundgren, P., et al.
(författare)
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Morphological instability of GaInNAs quantum wells on AlGaAs/GaAs distributed bragg reflectors grown by metal-organic vapor-phase epitaxy
- 2002
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Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - Stockholm. ; , s. 241-244
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Konferensbidrag (refereegranskat)abstract
- We report on the optical and structural integrity of metal-organic vapor-phase epitaxy grown GaInNAs/GaAs single quantum wells on AlGaAs/GaAs distributed Bragg reflectors (DBRs). Surface morphology as measured by atomic force microscopy and quantum well photoluminescence were investigated for different numbers of DBR periods and different DBR-growth temperatures. Increased number of DBR periods severely degrades the surface morphology and photoluminescence. However, a significant improvement was obtained by lowering the growth temperature of the DBRs from 745 to 680°C.
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