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Träfflista för sökning "WFRF:(Bengtsson Jörgen 1968 ) srt2:(2020)"

Search: WFRF:(Bengtsson Jörgen 1968 ) > (2020)

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1.
  • Chang, Tsu Chi, et al. (author)
  • Electrically Injected GaN-Based Vertical-Cavity Surface-Emitting Lasers with TiO2 High-Index-Contrast Grating Reflectors
  • 2020
  • In: ACS Photonics. - : American Chemical Society (ACS). - 2330-4022. ; 7:4, s. 861-866
  • Journal article (peer-reviewed)abstract
    • We demonstrate the first electrically injected GaN-based vertical-cavity surface-emitting lasers (VCSELs) with a TiO2 high-index-contrast grating (HCG) as the top mirror. Replacing the top distributed Bragg reflector (DBR) with an HCG offers substantial thickness reduction, polarization-pinning, and setting of the resonance wavelength by the grating parameters. Conventional HCGs are usually suspended in the low refractive index material, such as air, in order to create the largest refractive index contrast. However, the mechanical stability of such structures can be questioned and creating free-hanging GaN-membrane on top of GaN is problematic. We have therefore fabricated TiO2-HCGs resting directly on GaN without an air-gap. No DBR layers are used below the HCG to boost the reflectivity. A VCSEL with an aperture diameter of 10 μm shows a threshold current of 25 mA under pulsed operation at room temperature. The lasing modes locate around 400 nm and are transversely electrically -polarized with a line width of 0.5 nm. The full-width half-maximum beam divergence is 10°. This demonstration of a TiO2-HCG VCSEL offers a new route to achieve polarization pinning and could also allow additional benefits such as postgrowth setting of the resonance wavelength.
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2.
  • Chang, Tsu-Chi, et al. (author)
  • GaN-based vertical-cavity surface-emitting laser incorporating a TiO2 high-index-contrast grating
  • 2020
  • In: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. ; 11280
  • Conference paper (peer-reviewed)abstract
    • We demonstrate the first electrically injected GaN-based VCSEL with a TiO2 high-contrast grating (HCG) as the top mirror. The TiO2-HCG rested directly on the n-GaN without an airgap for mechanical stability. A VCSEL with an aperture diameter of 10 mu m had a threshold current of 25 mA under pulsed operation at room temperature. Multiple longitudinal modes coexist around 400 nm, each TM-polarized with a linewidth of 0.5 nm (spectral resolution limited). This first demonstration of a TiO2-HCG VCSEL offers a new route to achieve polarization pinning and could also allow additional benefits such as post-growth setting of resonance wavelength.
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3.
  • Haglund, Åsa, 1976, et al. (author)
  • Are blue and ultraviolet VCSELs a reality or just a dream?
  • 2020
  • Conference paper (other academic/artistic)abstract
    • Blue-emitting vertical-cavity surface-emitting lasers (VCSELs) with high optical output powers and decent threshold current densities have recently been demonstrated, but the power efficiency is still below 10%. We will give an overview of the challenges to realize high-performing devices and summarize state-of-the-art results, including our schemes for optically guided devices that are used in the best blue VCSELs today. In addition, we will present our method to simultaneously achieve high-reflectivity mirrors and good control over the cavity length for ultraviolet VCSELs. This has resulted in, to the best of our knowledge, the shortest VCSEL emission wavelength around 310 nm.
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4.
  • Haglund, Åsa, 1976, et al. (author)
  • Recent progress for blue VCSELs and challenges to move to UV
  • 2020
  • Conference paper (other academic/artistic)abstract
    • We will summarize state-of-the-art results in III-nitride-based vertical-cavity surface-emitting lasers (VCSELs) and the main challenges in going from blue to ultraviolet-emitting devices. In particular we will highlight how to reduce threshold current densities by using optically guided cavities and our method to simultaneously achieve high-reflectivity mirrors and good control over the cavity length for AlGaN-based ultraviolet VCSELs. The latter has resulted in the shortest emission wavelength from a VCSEL at around 310 nm. This claim of lasing is supported by a nonlinear increase in output power versus pump power and a simultaneous beam width and spectral narrowing around threshold.
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5.
  • Hjort, Filip, 1991, et al. (author)
  • Optical microprism cavities based on dislocation-free GaN
  • 2020
  • In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 117:23
  • Journal article (peer-reviewed)abstract
    • Three-dimensional growth of nanostructures can be used to reduce the threading dislocation density that degrades III-nitride laser performance. Here, nanowire-based hexagonal GaN microprisms with flat top and bottom c-facets are embedded between two dielectric distributed Bragg reflectors to create dislocation-free vertical optical cavities. The cavities are electron beam pumped, and the quality (Q) factor is deduced from the cavity-filtered yellow luminescence. The Q factor is similar to 500 for a 1000nm wide prism cavity and only similar to 60 for a 600nm wide cavity, showing the strong decrease in Q factor when diffraction losses become dominant. Measured Q factors are in good agreement with those obtained from quasi-3D finite element frequency-domain method and 3D beam propagation method simulations. Simulations further predict that a prism cavity with a 1000nm width will have a Q factor of around 2000 in the blue spectral regime, which would be the target regime for real devices. These results demonstrate the potential of GaN prisms as a scalable platform for realizing small footprint lasers with low threshold currents.
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