| 1. |
- Bengtsson, Per Erik, et al.
(författare)
-
Rotational cars thermometry in sooting flames
- 1992
-
Ingår i: Combustion Science and Technology. - : Informa UK Limited. - 0010-2202 .- 1563-521X. ; 81:1-3, s. 129-140
-
Tidskriftsartikel (refereegranskat)abstract
- Coherent anti-Stokes Raman scattering of pure rotational transitions, rotational CARS, is demonstrated as an efficient method for temperature determination in sooting flames. The dual broadband CARS approach was used to measure temperature profiles in premixed, sooting ethylene flames at atmospheric pressure by probing the nitrogen gas. The recorded spectra were of equally high quality in non-sooting and sooting flames with volume fractions of soot of up to 7 x 10 7 cm3 soot/cm3The advantages of rotational CARS in comparison with several other techniques for the measurement of temperatures in sooting flames, and the general applicability of the technique to different combustion conditions, are discussed. Potential limitations in the application of rotational CARS to sooting flames that are more heavily sooting than the ones investigated in this study, are outlined.
|
|
| 2. |
- Bengtsson, Per-Erik, et al.
(författare)
-
Vibrational CARS thermometry in sooty flames: Quantitative evaluation of C2 absorption interference
- 1990
-
Ingår i: Combustion and Flame. - 0010-2180. ; 82:2
-
Tidskriftsartikel (refereegranskat)abstract
- The application of nitrogen vibrational CARS thermometry to sooty, premixed, atmospheric pressure flames has been investigated using a Nd:YAG laser based system. It was found that laser-produced C2 radicals strongly absorb part of the fundamental band peak in the CARS spectrum. This was the most severe interference to the CARS signal. A quantitative investigation of temperature errors caused by the C2 absorption effect is presented. The correlation between the absorption interference and the soot volume fraction was examined for different flame conditions. Also, the increase of the nonresonant susceptibility in sooty flame regions is clearly illustrated and its effect on thev evaluated temperature is quantitatively determined. The single-shot temperature standard deviation has also been investigated in flames with different soot loadings. Finally, other interference effects to the CARS signals in sooty flames are described and discussed.
|
|
| 3. |
- Bengtsson, Stefan, 1961, et al.
(författare)
-
Characterisation of interface electron state distributions at directly bonded silicon/silicon interfaces
- 1990
-
Ingår i: ESSDERC 90. 20th European Solid State Device Research Conference. ; , s. 1-
-
Konferensbidrag (refereegranskat)abstract
- Measurement methods for characterizing the electrical properties of directly bonded Si/Si n/n-type or p/p-type interfaces are presented. The density of interface states in the bandgap of the semiconductor and the density of interface charges at the bonded interface are determined from measurements of current and capacitance vs. applied voltage
|
|
| 4. |
|
|
| 5. |
- Bengtsson, Stefan, 1961, et al.
(författare)
-
Charge densities at silicon interfaces prepared by wafer bonding
- 1990
-
Ingår i: 1990 IEEE SOS/SOI Technology Conference.. ; , s. 77-
-
Tidskriftsartikel (refereegranskat)abstract
- It is found that Si/Si and Si/SiO2 interfaces exhibit different interface charge properties when bonded at comparable temperatures and surface treatments. Thermally grown oxides were bonded to bare silicon surfaces and the bonded Si/SiO2 interface was investigated on MOS-structures by the C-V technique. Interfaces prepared at temperatures in the range 900-1100°c exhibited U-shaped interface state densities. Si/Si samples were prepared using a hydrophilizing surface treatment before wafer bonding. At the same annealing temperatures, the interface state densities of the bonded Si/Si interfaces were in the range 1011-1013 cm-2 eV-1. Si/Si interfaces are found to be very sensitive to prebond chemical treatment, while Si/SiO2 interfaces are not. Native oxides at bonded silicon interfaces have a more pronounced influence on Si/Si interfaces than on Si/SiO2 interfaces
|
|
| 6. |
|
|
| 7. |
|
|
| 8. |
|
|
| 9. |
- Bengtsson, Stefan, 1961, et al.
(författare)
-
Oxide degradation of wafer bonded MOS capacitors following Fowler-Nordheim electron injection
- 1992
-
Ingår i: Proceedings of the First International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications. ; , s. 339-
-
Konferensbidrag (refereegranskat)abstract
- The degradation of wafer bonded silicon dioxides as a result of Fowler-Nordheim electron injection has been studied. The samples were MOS capacitors with wafer bonded SiO2-SiO2 interfaces at the oxide center. The charge trapping in the oxide and the Si-SiO2 interface state generation were monitored as a function of injected charge and compared to reference MOS capacitors without bonded interfaces. A larger change in the oxide charge was found in the bonded capacitors as compared to the reference structures. The centroid of trapped negative oxide charge was found to be located close to the SiO2-SiO2 interface in the bonded structures, while the reference structures exhibited centroids close to the injecting contact. The electron injection caused approximately the same generation of interface states in both groups of capacitors
|
|
| 10. |
|
|
