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- Bengtsson, Stefan, 1961, et al.
(författare)
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Characterisation of interface electron state distributions at directly bonded silicon/silicon interfaces
- 1990
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Ingår i: ESSDERC 90. 20th European Solid State Device Research Conference. ; , s. 1-
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Konferensbidrag (refereegranskat)abstract
- Measurement methods for characterizing the electrical properties of directly bonded Si/Si n/n-type or p/p-type interfaces are presented. The density of interface states in the bandgap of the semiconductor and the density of interface charges at the bonded interface are determined from measurements of current and capacitance vs. applied voltage
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| 3. |
- Bengtsson, Stefan, 1961, et al.
(författare)
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Charge densities at silicon interfaces prepared by wafer bonding
- 1990
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Ingår i: 1990 IEEE SOS/SOI Technology Conference.. ; , s. 77-
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Tidskriftsartikel (refereegranskat)abstract
- It is found that Si/Si and Si/SiO2 interfaces exhibit different interface charge properties when bonded at comparable temperatures and surface treatments. Thermally grown oxides were bonded to bare silicon surfaces and the bonded Si/SiO2 interface was investigated on MOS-structures by the C-V technique. Interfaces prepared at temperatures in the range 900-1100°c exhibited U-shaped interface state densities. Si/Si samples were prepared using a hydrophilizing surface treatment before wafer bonding. At the same annealing temperatures, the interface state densities of the bonded Si/Si interfaces were in the range 1011-1013 cm-2 eV-1. Si/Si interfaces are found to be very sensitive to prebond chemical treatment, while Si/SiO2 interfaces are not. Native oxides at bonded silicon interfaces have a more pronounced influence on Si/Si interfaces than on Si/SiO2 interfaces
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| 7. |
- Bengtsson, Stefan, 1961, et al.
(författare)
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Oxide degradation of wafer bonded MOS capacitors following Fowler-Nordheim electron injection
- 1992
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Ingår i: Proceedings of the First International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications. ; , s. 339-
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Konferensbidrag (refereegranskat)abstract
- The degradation of wafer bonded silicon dioxides as a result of Fowler-Nordheim electron injection has been studied. The samples were MOS capacitors with wafer bonded SiO2-SiO2 interfaces at the oxide center. The charge trapping in the oxide and the Si-SiO2 interface state generation were monitored as a function of injected charge and compared to reference MOS capacitors without bonded interfaces. A larger change in the oxide charge was found in the bonded capacitors as compared to the reference structures. The centroid of trapped negative oxide charge was found to be located close to the SiO2-SiO2 interface in the bonded structures, while the reference structures exhibited centroids close to the injecting contact. The electron injection caused approximately the same generation of interface states in both groups of capacitors
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| 10. |
- Bengtsson, Stefan, 1961, et al.
(författare)
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Silicon on aluminum nitride structures formed by wafer bonding
- 1994
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Ingår i: 1994 IEEE International SOI Conference Proceedings. ; , s. 35-
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Tidskriftsartikel (refereegranskat)abstract
- This paper deals with the use of reactively sputtered aluminum nitride (AlN) films as insulators for Bond and Etch-back Silicon-On-Insulator (BESOI) materials. In SOI-applications where high power is dissipated in the silicon SOI-film the low thermal conductivity of the buried silicon dioxide layer may cause a temperature rise in the silicon film detrimentally affecting the device performance. An attractive alternative would be to replace the silicon dioxide of the SOI structure with another material, like diamond, silicon carbide or aluminum nitride. The thermal conductivity of AlN is considerably larger than that of Si02. This paper presents results on how sputter deposition of AlN may be combined with wafer bonding for the creation of highly thermally conductive SOI structures
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