| 1. |
- Bengtsson, Stefan, 1961, et al.
(författare)
-
Integration of silicon and diamond, aluminum nitride or aluminum oxide for electronic materials
- 1999
-
Ingår i: conference proceedings:III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics. Symposium.. ; , s. 133-
-
Konferensbidrag (refereegranskat)abstract
- Material integration for the formation of advanced silicon-on-insulator materials by wafer bonding and etch-back is discussed. Wafer bonding allows the combining of materials that it is not possible to grow on top of each other by any other technique. In our experiments, polycrystalline diamond, aluminum nitride or aluminum oxide films with thickness of 0.1-5 μm were deposited on silicon wafers. Bonding experiments were made with these films to bare silicon wafers with the goal of forming silicon-on-insulator structures with buried films of polycrystalline diamond, aluminum nitride or aluminum oxide. These silicon-on-insulator structures are intended to address self-heating effects in conventional silicon-on-insulator materials with buried layers of silicon dioxide. The surfaces of the deposited diamond films were, by order of magnitude, too rough to allow direct bonding to a silicon wafer. In contrast the deposited aluminum nitride and aluminum oxide films did allow direct bonding to silicon. Bonding of the diamond surface to silicon was instead made through a deposited and polished layer of polycrystalline silicon on top of the diamond. In the case of the aluminum nitride electrostatic bonding was also demonstrated. Further, the compatibility of these insulators to silicon process technology was investigated
|
|
| 2. |
|
|
| 3. |
|
|
| 4. |
- Bengtsson, Stefan, 1961
(författare)
-
Characterization of thin SOI layers
- 1995
-
Ingår i: Proceedings of the Third International Symposium on Semiconductor Wafer Bonding: Physics and Applications. ; , s. 221-
-
Konferensbidrag (refereegranskat)abstract
- Silicon-on-insulator materials still suffer from imperfect electrical and crystalline quality and a spread in performance is observed. Viable characterization techniques are necessary to advance the quality of the materials. This paper gives an overview of characterization methods for silicon-on-insulator materials. Different techniques, both destructive and nondestructive, for determination of silicon and silicon dioxide film thicknesses, structural defects and impurities are reviewed. The potentials and limits of different techniques for silicon-on-insulator material characterization are discussed and some examples of results are given primarily for silicon-on-insulator materials formed by wafer bonding
|
|
| 5. |
|
|
| 6. |
- Bengtsson, Stefan, 1961, et al.
(författare)
-
SPFM pre-cleaning for formation of silicon interfaces by wafer bonding
- 1997
-
Ingår i: Science and Technology of Semiconductor Surface Preparation. Symposium. ; , s. 267-
-
Konferensbidrag (refereegranskat)abstract
- The use of H2SO4-H2O2-HF (SPFM) at low HF concentrations (10 to 1000 ppm) has been investigated as the preparation procedure prior to formation of Si-Si interfaces by wafer bonding. The SPFM cleaning process makes it possible to form a hydrophilic (OH terminated) silicon surface, thereby achieving a spontaneous and strong room temperature bond. Electrical characterization using current vs. voltage and spreading resistance measurements shows that this cleaning procedure can be used to form Si-Si junctions with excellent electrical properties. Some of the problems related to hydrophobic wafer bonding can thus be circumvented by the proposed technique
|
|
| 7. |
|
|
| 8. |
- Bengtsson, Stefan, 1961
(författare)
-
Wafer bonding and smartcut for formation of silicon-on-insulator materials
- 1998
-
Ingår i: International Conference on Solid-State and Integrated Circuit Technology Proceedings. ; , s. 745-
-
Konferensbidrag (refereegranskat)abstract
- Silicon-on-insulator (SOI) materials are expected to get an increased attention for mainstream CMOS as well as for high frequency or high voltage applications. Of the existing methods for manufacture of SOI materials, wafer bonding combined with smartcut seems to be the most promising approach. In the case of wafer bonding, surface micro-roughness, wafer dimensions, surface chemistry and ambient pressure all influence the result. In the smartcut technology, hydrogen implantation and an annealing step can be controlled for a precise splitting of a silicon wafer, thereby forming a thin silicon film. In this presentation the application of wafer bonding and smartcut for formation of SOI materials will be reviewed.
|
|
| 9. |
- Bergh, Mats, 1968, et al.
(författare)
-
The influence of surface micro-roughness on bondability
- 1995
-
Ingår i: Proceedings of the Third International Symposium on Semiconductor Wafer Bonding: Physics and Applications. ; , s. 126-
-
Konferensbidrag (refereegranskat)abstract
- The requirements on a surface in terms of micro-roughness necessary to achieve spontaneous bonding on wafer contact have been investigated. Wafers from four different manufacturers, all having their special surface characteristics, were evaluated using atomic force microscopy. Their room temperature bondability was investigated using the contact wave velocity and the surface energy of the formed bond as parameters. Different wet cleaning procedures were used to modify the micro-roughness of the silicon surface. It is found that the surface rms roughness value is not a good measure for judging the bondability of a surface. Instead we propose the use of the Fourier spectrum of the surface roughness. The occurrence of low, ~0.001 Å-1, spatial frequency components of large amplitude in the Fourier spectrum of the surface roughness may affect the bondability of the surface negatively while higher frequency components are not as important
|
|
| 10. |
|
|
