| 1. |
- Alavian Ghavanini, Farzan, 1978, et al.
(författare)
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CMOS considerations in nanoelectromechanical carbon nanotube-based switches
- 2008
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Ingår i: Nanotechnology. - 1361-6528 .- 0957-4484.
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, we focus on critical issues directly related to the viability of carbon nanotube-based nanoelectromechanical switches, to perform their intended functionality as logic and memory elements, through assessment of typical performance parameters with reference to complementary metal-oxide-semiconductor devices. A detailed analysis of performance metrics regarding threshold voltage control, static and dynamic power dissipation, speed, and integration density is presented. Apart from packaging and reliability issues, these switches seem to be competitive in low power, particularly low-standby power, logic and memory applications.
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| 2. |
- Asplund Persson, Anna, 1966-, et al.
(författare)
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Cross-talk between adenosine and the oxatriazole derivative GEA 3175 in platelets
- 2005
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Ingår i: European Journal of Pharmacology. - : Elsevier BV. - 0014-2999 .- 1879-0712. ; 517:3, s. 149-157
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Tidskriftsartikel (refereegranskat)abstract
- We examined the interplay between adenosine and the nitric oxide (NO)-containing oxatriazole derivative GEA 3175 in human platelets. The importance of cyclic guanosine 3′5′-monophosphate (cGMP)-inhibited phosphodiesterases (PDEs) was elucidated by treating the platelets with adenosine combined with either GEA 3175 or the PDE3-inhibitor milrinone. The drug combinations provoked similar cyclic adenosine 3′5′-monophosphate (cAMP) responses. On the contrary, cGMP levels were increased only in GEA 3175-treated platelets. Both drug combinations reduced P-selectin exposure, platelet adhesion and fibrinogen-binding. However, adenosine together with GEA 3175 was more effective in inhibiting platelet aggregation and ATP release. Thrombin-induced rises in cytosolic Ca2+ were suppressed by the two drug combinations. Adenosine administered with GEA 3175 was, however, more effective in reducing Ca2+ influx.In conclusion, the interaction between adenosine and GEA 3175 involves cGMP-mediated inhibition of PDE3. The results also imply that inhibition of Ca2+ influx represent another cGMP-specific mechanism that enhances the effect of adenosine.
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| 3. |
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| 4. |
- Berg, Jonas, 1973, et al.
(författare)
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Electrical Properties of Si-SiO2-Si Nanogaps
- 2005
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Ingår i: Nanotechnology. - : IOP Publishing. - 1361-6528 .- 0957-4484. ; 16:10, s. 2197-2202
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Tidskriftsartikel (refereegranskat)abstract
- The chances of attaching organic molecules to silicon surfaces can be considerably enhanced if a robust nanogap structure with silicon electrodes can be used to connect the molecules. We describe the electrical properties of such an electrode structure, with a separation of the silicon surfaces in the 37 nm range. These silicon nanogaps are manufactured by partly removing the silicon dioxide insulator from a siliconoxidesilicon material stack, by using a selective oxide etchant. After the activation of the gap (the etching), current instabilities appear, which are comparable to the properties of thin oxides after soft breakdown. Applying a constant voltage can reduce these current instabilities. We also address the issue of surface leakage currents for these nanogap structures.
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| 5. |
- Berg, Jonas, 1973, et al.
(författare)
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Low-frequency noise in silicon nanogaps
- 2005
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 87:21, s. 223107-3
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Tidskriftsartikel (refereegranskat)abstract
- Silicon nanogaps are contact structures for connecting organic molecules. An insulating layer is removed by etching, and this dramatically increases the current levels and the noise, which closely resembles a 1/f-law and scales with the square of the current. After etching the noise level at 30 Hz and 10 nA is in the order of 10-21 A2/Hz, which is more than two orders of magnitude larger than before etching. We model the noisy behavior by several percolation paths in parallel at the etched surface between the electrodes, and compare with soft breakdown in thin oxide.
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| 6. |
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| 7. |
- Enoksson, Peter, 1957, et al.
(författare)
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Wafer bonding for MEMS
- 2005
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Ingår i: Proceeding of the 9th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applic, Canadaations, Quebec City.
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Konferensbidrag (refereegranskat)
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| 8. |
- Kabir, Mohammad, 1974, et al.
(författare)
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Fabrication of individual, vertically aligned carbon nanofibres on metal substrates from prefabricated catalyst dots
- 2006
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 17:3, s. 790-794
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Tidskriftsartikel (refereegranskat)abstract
- Carbon nanofibres (CNFs) of controlled diameter and length were grown on different metal substrates using plasma-enhanced chemical vapour deposition (PECVD). The diameter control of catalyst dots (and hence CNF diameter) was obtained by using the shot modulation technique in electron beam lithography. Catalyst dots of different sizes within arrays of different pitch were prepared and the dependence of the growth of vertically aligned CNFs on these parameters was studied for different metal underlayers. Good quality vertically aligned CNFs with a narrow length distribution were grown on Mo and W substrates. The structures grown on Nb substrates were significantly shorter for identical growth conditions and showed a lower nucleation rate. We demonstrate that through the shot modulation technique it is possible to control the diameter variation of CNFs from a single design geometry for the catalyst deposition. Individual VACNFs can be grown down to a pitch within the range 100–500 nm.
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| 9. |
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| 10. |
- Kabir, Mohammad, 1974, et al.
(författare)
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Plasma-enhanced chemical vapour deposition growth of carbon nanotubes on different metal underlayers
- 2005
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 16, s. 458-466
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Tidskriftsartikel (refereegranskat)abstract
- One important requirement for future applications of carbon nanotube electronic devices is the ability to controllably grow carbon nanotubes on metal electrodes. Here we show that it is possible to grow small diameter (<10 nm) vertically aligned carbon nanotubes on different metal underlayers using plasma-enhanced chemical vapour deposition. A crucial component is the insertion of a thin silicon layer between the metal and the catalyst particle. The electrical integrity of the metal electrode layer after plasma treatment and the quality of the metals as interconnects are also investigated.
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