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| 2. |
- Bengtsson, Stefan, 1961, et al.
(författare)
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Integration of silicon and diamond, aluminum nitride or aluminum oxide for electronic materials
- 1999
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Ingår i: conference proceedings:III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics. Symposium.. ; , s. 133-
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Konferensbidrag (refereegranskat)abstract
- Material integration for the formation of advanced silicon-on-insulator materials by wafer bonding and etch-back is discussed. Wafer bonding allows the combining of materials that it is not possible to grow on top of each other by any other technique. In our experiments, polycrystalline diamond, aluminum nitride or aluminum oxide films with thickness of 0.1-5 μm were deposited on silicon wafers. Bonding experiments were made with these films to bare silicon wafers with the goal of forming silicon-on-insulator structures with buried films of polycrystalline diamond, aluminum nitride or aluminum oxide. These silicon-on-insulator structures are intended to address self-heating effects in conventional silicon-on-insulator materials with buried layers of silicon dioxide. The surfaces of the deposited diamond films were, by order of magnitude, too rough to allow direct bonding to a silicon wafer. In contrast the deposited aluminum nitride and aluminum oxide films did allow direct bonding to silicon. Bonding of the diamond surface to silicon was instead made through a deposited and polished layer of polycrystalline silicon on top of the diamond. In the case of the aluminum nitride electrostatic bonding was also demonstrated. Further, the compatibility of these insulators to silicon process technology was investigated
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| 4. |
- Bergh, M, et al.
(författare)
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Silicon surfaces for hydrophobic wafer bonding
- 1997
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Ingår i: Proc of the Fourth International Symosium on Semiconductor Wafer Bonding: Science, Technology and Applications, Electrochemical Society Proceedings Vol 97-36. ; , s. 87-94, s. 87-94
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Konferensbidrag (refereegranskat)
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| 5. |
- Bergh, Mats, 1968, et al.
(författare)
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The influence of surface micro-roughness on bondability
- 1995
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Ingår i: Proceedings of the Third International Symposium on Semiconductor Wafer Bonding: Physics and Applications. ; , s. 126-
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Konferensbidrag (refereegranskat)abstract
- The requirements on a surface in terms of micro-roughness necessary to achieve spontaneous bonding on wafer contact have been investigated. Wafers from four different manufacturers, all having their special surface characteristics, were evaluated using atomic force microscopy. Their room temperature bondability was investigated using the contact wave velocity and the surface energy of the formed bond as parameters. Different wet cleaning procedures were used to modify the micro-roughness of the silicon surface. It is found that the surface rms roughness value is not a good measure for judging the bondability of a surface. Instead we propose the use of the Fourier spectrum of the surface roughness. The occurrence of low, ~0.001 Å-1, spatial frequency components of large amplitude in the Fourier spectrum of the surface roughness may affect the bondability of the surface negatively while higher frequency components are not as important
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| 9. |
- Johansson, Mikael, et al.
(författare)
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High frequency losses in transmission lines made on SIMOX, bulk silicon and depleted silicon/silicon structures formed by wafer bonding
- 1999
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Ingår i: 1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345). ; , s. 30-
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Konferensbidrag (refereegranskat)abstract
- Wafer bonding and etch-back has been used to manufacture a silicon material intended as substrate for high frequency applications. The space charge region surrounding the bonded silicon/silicon interface depletes the silicon, thereby causing semi-insulating behaviour at high frequencies. The formed material was characterized using measurements on metal transmission lines and the results were compared to similar measurements on SIMOX and bulk silicon wafers
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