E/W-Band CPW-based Amplifier MMICs Fabricated in a 60 nm GaN-on-Silicon Foundry Process

• This paper presents an experimental evaluation of two co-planar waveguide (CPW) based E/W-band amplifier MMICs realised in a 60 nm GaN-on-Si foundry process. A one-stage amplifier and a two-stage amplifier realised in this process have a measured maximum gain of 8 dB and 16 dB at 73-74 GHz, respectively. The two amplifiers have a measured gain of 3 dB and 7 dB at 93 GHz when the drain voltage (Vd) is 10 V and the drain current (Id) is 15 mA per stage. The two-stage amplifier has a measured noise figure (NF) of 2.7-3.8 dB and 2.9-4.1 dB at 90-95 GHz when the Id is 10 mA and Vd is 5 V and 10 V, respectively. The measured NF of this amplifier is equal to 4-6 dB at 92-95 GHz when an Id of 10-20 mA is used in each stage with same drain bias.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Materialteknik -- Pappers-, massa- och fiberteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering -- Paper, Pulp and Fiber Technology (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Kemiteknik -- Kemiska processer (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Chemical Engineering -- Chemical Process Engineering (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

W-band amplifiers

noise characterization

power handling

60 nm GaN-on-Si MMIC process

Publikations- och innehållstyp

kon (ämneskategori)

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