| 1. |
- Berntsen, Magnus H., et al.
(författare)
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A spin- and angle-resolving photoelectron spectrometer
- 2010
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Ingår i: Review of Scientific Instruments. - : AIP Publishing. - 0034-6748 .- 1089-7623. ; 81:3
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Tidskriftsartikel (refereegranskat)abstract
- A new type of hemispherical electron energy analyzer that permits angle and spin resolved photoelectron spectroscopy has been developed. The analyzer permits standard angle resolved spectra to be recorded with a two-dimensional detector in parallel with spin detection using a mini-Mott polarimeter. General design considerations as well as technical solutions are discussed and test results from the Au(111) surface state are presented.
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| 2. |
- Berntsen, Magnus H., et al.
(författare)
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An experimental setup for high resolution 10.5 eV laser-based angle-resolved photoelectron spectroscopy using a time-of-flight electron analyzer
- 2011
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Ingår i: Review of Scientific Instruments. - : AIP Publishing. - 0034-6748 .- 1089-7623. ; 82:9, s. 095113-
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Tidskriftsartikel (refereegranskat)abstract
- We present an experimental setup for laser-based angle-resolved time-of-flight photoemission. Using a picosecond pulsed laser, photons of energy 10.5 eV are generated through higher harmonic generation in xenon. The high repetition rate of the light source, variable between 0.2 and 8 MHz, enables high photoelectron count rates and short acquisition times. By using a time-of-flight analyzer with angle-resolving capabilities, electrons emitted from the sample within a circular cone of up to +/- 15 degrees can be collected. Hence, simultaneous acquisition of photoemission data for a complete area of the Brillouin zone is possible. The current photon energy enables bulk sensitive measurements, high angular resolution, and the resulting covered momentum space is large enough to enclose the entire Brillouin zone in cuprate high-T(c) superconductors. Fermi edge measurements on polycrystalline Au shows an energy resolution better than 5 meV. Data from a test measurement of the Au(111) surface state are presented along with measurements of the Fermi surface of the high-T(c) superconductor Bi(2)Sr(2)CaCu(2)O(8+delta) (Bi2212).
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| 3. |
- Berntsen, Magnus H.
(författare)
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Consequences of a non-trivial band-structure topology in solids : Investigations of topological surface and interface states
- 2013
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- The development and characterization of experimental setups for angle-resolved photoelectron spectroscopy (ARPES) and spin- and angle-resolved photoelectron spectroscopy (SARPES) is described. Subsequently, the two techniques are applied to studies of the electronic band structure in topologically non-trivial materials.The laser-based ARPES setup works at a photon energy of 10.5 eV and a typical repetition rate in the range 200 kHz to 800 kHz. By using a time-of-flight electron energy analyzer electrons emitted from the sample within a solid angle of up to ±15 degrees can be collected and analyzed simultaneously. The SARPES setup is equipped with a traditional hemispherical electron energy analyzer in combination with a mini-Mott electron polarimeter. The system enables software-controlled switching between angle-resolved spin-integrated and spin-resolved measurements, thus providing the possibility to orient the sample by mapping out the electronic band structure using ARPES before performing spin-resolved measurements at selected points in the Brillouin zone.Thin films of the topological insulators (TIs) Bi2Se3, Bi2Te3 and Sb2Te3 are grown using e-beam evaporation and their surface states are observed by means of ARPES. By using a combination of low photon energies and cryogenic sample temperatures the topological states originating from both the vacuum interface (surface) and the substrate interface are observed in Bi2Se3 films and Bi2Se3/Bi2Te3 heterostructures, with total thicknesses in the ultra-thin limit (six to eight quintuple layers), grown on Bi-terminated Si(111) substrates. Band alignment between Si and Bi2Se3 at the interface creates a band bending through the films. The band bending is found to be independent of the Fermi level (EF) position in the bulk of the substrate, suggesting that the surface pinning of EF in the Si(111) substrate remains unaltered after deposition of the TI films. Therefore, the type and level of doping of the substrate does not show any large influence on the size of the band bending.Further, we provide experimental evidence for the realization of a topological crystalline insulator (TCI) phase in the narrow-band semiconductor Pb1−xSnxSe. The TCI phase exists for temperatures below the transition temperature Tc and is characterized by an inverted bulk band gap accompanied by the existence of non-gapped surface states crossing the band gap. Above Tc the material is in a topologically trivial phase where the surface states are gapped. Thus, when lowering the sample temperature across Tc a topological phase transition from a trivial insulator to a TCI is observed. SARPES studies indicate a helical spin structure of the surface states both in the topologically trivial and the TCI phase.
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| 4. |
- Berntsen, Magnus H., et al.
(författare)
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Direct observation of decoupled Dirac states at the interface between topological and normal insulators
- 2013
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : American Physical Society. - 1098-0121 .- 1550-235X. ; 88:19
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Tidskriftsartikel (refereegranskat)abstract
- Several proposed applications and exotic effects in topological insulators rely on the presence of helical Dirac states at the interface between a topological insulator and a normal insulator. In the present work, we have used low-energy angle-resolved photoelectron spectroscopy to uncover and characterize the interface states of Bi2Se3 thin films and Bi2Te3/Bi2Se3 heterostructures grown on Si(111). The results establish that Dirac fermions are indeed present at the topological-normal-insulator boundary and absent at the topological-topological-insulator interface. Moreover, it is demonstrated that band bending present within the topological-insulator films leads to a substantial separation of the interface and surface states in energy. These results pave the way for further studies and the realization of interface-related phenomena in topological-insulator thin-film heterostructures.
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| 5. |
- Razzoli, E., et al.
(författare)
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The Fermi surface and band folding in La2-xSrxCuO4, probed by angle-resolved photoemission
- 2010
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Ingår i: New Journal of Physics. - : IOP Publishing. - 1367-2630. ; 12, s. 125003-
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Tidskriftsartikel (refereegranskat)abstract
- A systematic angle-resolved photoemission study of the electronic structure of La2-xSrxCuO4 in a wide doping range is presented in this paper. In addition to the main energy band, we observed a weaker additional band, the (pi, pi) folded band, which shows unusual doping dependence. The appearance of the folded band suggests that a Fermi surface reconstruction is doping dependent and could already occur at zero magnetic field.
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| 6. |
- Wojek, Bastian M., et al.
(författare)
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The J(eff)=1/2 insulator Sr3Ir2O7 studied by means of angle-resolved photoemission spectroscopy
- 2012
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Ingår i: Journal of Physics. - : IOP Publishing. - 0953-8984 .- 1361-648X. ; 24:41, s. 415602-
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Tidskriftsartikel (refereegranskat)abstract
- The low-energy electronic structure of the J(eff) = 1/2 spin-orbit insulator Sr3Ir2O7 has been studied by means of angle-resolved photoemission spectroscopy. A comparison of the results for bilayer Sr3Ir2O7 with available literature data for the related single-layer compound Sr2IrO4 reveals qualitative similarities and similar J(eff) = 1/2 bandwidths for the two materials, but also pronounced differences in the distribution of the spectral weight. In particular, photoemission from the J(eff) = 1/2 states appears to be suppressed. Yet, it is found that the Sr3Ir2O7 data are in overall better agreement with band-structure calculations than the data for Sr2IrO4.
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