| 1. |
- Bécoulet, A., et al.
(författare)
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Science and technology research and development in support to ITER and the Broader Approach at CEA
- 2013
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Ingår i: Nuclear Fusion. - : IOP Publishing. - 1741-4326 .- 0029-5515. ; 53:10
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Tidskriftsartikel (refereegranskat)abstract
- In parallel to the direct contribution to the procurement phase of ITER and Broader Approach, CEA has initiated research & development programmes, accompanied by experiments together with a significant modelling effort, aimed at ensuring robust operation, plasma performance, as well as mitigating the risks of the procurement phase. This overview reports the latest progress in both fusion science and technology including many areas, namely the mitigation of superconducting magnet quenches, disruption-generated runaway electrons, edge-localized modes (ELMs), the development of imaging surveillance, and heating and current drive systems for steady-state operation. The WEST (W Environment for Steady-state Tokamaks) project, turning Tore Supra into an actively cooled W-divertor platform open to the ITER partners and industries, is presented.
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| 2. |
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| 3. |
- Beyer, J., et al.
(författare)
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Maintaining success, reducing treatment burden, focusing on survivorship: highlights from the third European consensus conference on diagnosis and treatment of germ-cell cancer
- 2013
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Ingår i: Annals of Oncology. - : Elsevier BV. - 1569-8041 .- 0923-7534. ; 24:4, s. 878-888
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Forskningsöversikt (refereegranskat)abstract
- In November 2011, the Third European Consensus Conference on Diagnosis and Treatment of Germ-Cell Cancer (GCC) was held in Berlin, Germany. This third conference followed similar meetings in 2003 (Essen, Germany) and 2006 (Amsterdam, The Netherlands) [Schmoll H-J, Souchon R, Krege S et al. European consensus on diagnosis and treatment of germ-cell cancer: a report of the European Germ-Cell Cancer Consensus Group (EGCCCG). Ann Oncol 2004; 15: 1377-1399; Krege S, Beyer J, Souchon R et al. European consensus conference on diagnosis and treatment of germ-cell cancer: a report of the second meeting of the European Germ-Cell Cancer Consensus group (EGCCCG): part I. Eur Urol 2008; 53: 478-496; Krege S, Beyer J, Souchon R et al. European consensus conference on diagnosis and treatment of germ-cell cancer: a report of the second meeting of the European Germ-Cell Cancer Consensus group (EGCCCG): part II. Eur Urol 2008; 53: 497-513]. A panel of 56 of 60 invited GCC experts from all across Europe discussed all aspects on diagnosis and treatment of GCC, with a particular focus on acute and late toxic effects as well as on survivorship issues. The panel consisted of oncologists, urologic surgeons, radiooncologists, pathologists and basic scientists, who are all actively involved in care of GCC patients. Panelists were chosen based on the publication activity in recent years. Before the meeting, panelists were asked to review the literature published since 2006 in 20 major areas concerning all aspects of diagnosis, treatment and follow-up of GCC patients, and to prepare an updated version of the previous recommendations to be discussed at the conference. In addition, similar to 50 E-vote questions were drafted and presented at the conference to address the most controversial areas for a poll of expert opinions. Here, we present the main recommendations and controversies of this meeting. The votes of the panelists are added as online supplements.
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| 4. |
- Thorn, D. B., et al.
(författare)
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Polarization and anisotropic emission of K-shell radiation from heavy few electron ions
- 2011
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Ingår i: Canadian journal of physics (Print). - 0008-4204 .- 1208-6045. ; 89:5, s. 513-519
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Tidskriftsartikel (refereegranskat)abstract
- The population of magnetic sublevels in hydrogen-like uranium ions has been investigated in relativistic ion-atom collisions by observing the subsequent X-ray emission. Using the gas target at the experimental storage ring facility we observed the angular emission of Lyman-alpha radiation from hydrogen-like uranium ions. The alignment parameter for three different interaction energies was measured and found to agree well with theory. In addition, the use of different gas targets allowed for the electron-impact excitation process to be observed.
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| 5. |
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| 7. |
- Beyer, Franziska, et al.
(författare)
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Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n-type 4H-SiC
- 2011
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Ingår i: Journal of Applied Physics. - : American Institute of Physics. - 0021-8979 .- 1089-7550. ; 109:10, s. 103703-
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Tidskriftsartikel (refereegranskat)abstract
- After low-energy electron irradiation of epitaxial n-type 4H-SiC with a dose of 5 x 10(16) cm(-2), the bistable M-center, previously reported in high-energy proton implanted 4H-SiC, is detected in the deep level transient spectroscopy (DLTS) spectrum. The annealing behavior of the M-center is confirmed, and an enhanced recombination process is suggested. The annihilation process is coincidental with the evolvement of the bistable EB-centers in the low temperature range of the DLTS spectrum. The annealing energy of the M-center is similar to the generation energy of the EB-centers, thus partial transformation of the M-center to the EB-centers is suggested. The EB-centers completely disappeared after annealing temperatures higher than 700 degrees C without the formation of new defects in the observed DLTS scanning range. The threshold energy for moving Si atom in SiC is higher than the applied irradiation energy, and the annihilation temperatures are relatively low, therefore the M-center, EH1 and EH3, as well as the EB-centers are attributed to defects related to the C atom in SiC, most probably to carbon interstitials and their complexes.
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| 8. |
- Beyer, Franziska, et al.
(författare)
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Bistable defects in low-energy electron irradiated n-type 4H-SiC
- 2010
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Ingår i: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS. - : John Wiley and Sons, Ltd. - 1862-6254. ; 4:8-9, s. 227-229
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Tidskriftsartikel (refereegranskat)abstract
- Epitaxial n-type 4H-SiC layers were irradiated at room temperature by low-energy electrons. During the annihilation process of the irradiation induced defects EH I and EH3, three new bistable centers, labeled EB centers, were detected in the DLTS spectrum. The reconfigurations of the EB centers (I -andgt; II and II -andgt; I) take place at room temperature with a thermal reconfiguration energy of about 0.95 eV. The threshold energy for moving the Si atom from its site in the SiC crystal structure is higher than the applied irradiation energy; therefore, the EB centers are attributed to carbon related complex defects.
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| 9. |
- Beyer, Franziska, et al.
(författare)
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Capacitance transient study of a bistable deep level in e(-)-irradiated n-type 4H-SiC
- 2012
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Ingår i: Journal of Physics D. - : Institute of Physics. - 0022-3727 .- 1361-6463. ; 45:45
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Tidskriftsartikel (refereegranskat)abstract
- Using capacitance transient techniques, a bistable centre, called FB centre here, was observed in electron irradiated 4H-SiC. In configuration A, the deep level known as EH5 (E-a = E-C - 1.07 eV) is detected in the deep level transient spectroscopy spectrum, whereas for configuration B no obvious deep level is observed in the accessible part of the band gap. Isochronal annealing revealed the transition temperatures to be T-A -andgt; B andgt; 730K and for the opposite process T-B -andgt; A approximate to 710 K. The energy needed to conduct the transformations were determined to be E-A(A -andgt; B) = (2.1 +/- 0.1) eV and E-A(B -andgt; A) = (2.3 +/- 0.1) eV, respectively. The pre-factor indicated an atomic jump process for the opposite transition A -andgt; B and a charge carrier-emission dominated process in the case of B -andgt; A. Minority charge carrier injection enhanced the transformation from configuration B to configuration A by lowering the transition barrier by about 1.4 eV. Since the bistable FB centre is already present after low-energy electron irradiation (200 keV), it is likely related to carbon.
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| 10. |
- Beyer, Franziska, et al.
(författare)
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Defects in low-energy electron-irradiated n-type 4H-SiC
- 2010
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Ingår i: Physica Scripta, vol. T141. - : IOP Publishing. ; , s. 014006-
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Konferensbidrag (refereegranskat)abstract
- The bistable M-center, previously observed in high-energy proton-implanted 4H-SiC, was detected in low-energy electron-irradiated 4H-SiC using deep-level transient spectroscopy (DLTS). Irradiation increased the DLTS signals of the intrinsic defects Z(1/2) and EH6/7 and introduced the frequently observed defects EH1 and EH3. After the M-center is annealed out at about 650K without bias and at about 575K with bias applied to the sample during the annealing process, a new bistable defect in the low temperature range of the DLTS spectrum, the EB-center, evolves. Since low-energy irradiation affects mainly the carbon atoms in SiC, the M-center and the newly discovered EB-center are most probably carbon-related intrinsic defects.
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