| 1. |
- Palmquist, Jens-Petter, et al.
(författare)
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Magnetron sputtered epitaxial single-phase Ti3SiC2 thin films
- 2002
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 81:5, s. 835-837
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Tidskriftsartikel (refereegranskat)abstract
- We report on the synthesis and characterization of epitaxial single-crystalline Ti3SiC2 films (Mn + 1AXn-phase). Two original deposition techniques are described, (i) magnetron sputtering from Ti3SiC2 compound target and (ii) sputtering from individual titanium and silicon targets with co-evaporated C60 as carbon source. Epitaxial Ti3SiC2 films of single-crystal quality were grown at 900 °C with both techniques. Epitaxial TiC(111) deposited in situ on MgO(111) by Ti sputtering using C60 as carbon source was used to nucleate the Ti3SiC2 films. The epitaxial relationship was found to be Ti3SiC2(0001)//TiC(111)//MgO(111) with the in-plane orientation Ti3SiC2[100]//TiC[101]//MgO[101].
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| 2. |
- Aquila, Andrew L., et al.
(författare)
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Measurements of the optical constants of scandium in the 50-1300 eV range
- 2004
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Ingår i: SPIE 5538, Optical Constants of Materials for UV to X-Ray Wavelengths. - : SPIE - International Society for Optical Engineering. ; , s. 64-71
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Konferensbidrag (refereegranskat)abstract
- Scandium containing multilayers have been produced with very high reflectivity in the soft x-ray spectrum. Accurate optical constants are required in order to model the multilayer reflectivity. Since there are relatively few measurements of the optical constants of Scandium in the soft x-ray region we have performed measurements over the energy range of 50-1,300 eV. Thin films of Scandium were deposited by ion-assisted magnetron sputtering at Linkoping University and DC Magnetron sputtering at CXRO. Transmission measurements were performed at the Advanced Light Source beamline 6.3.2. The absorption coefficient was deduced from the measurements and the dispersive part of the index of refraction was obtained using the Kramers-Kronig relation. The measured optical constants are used to model the near-normal incidence reflectivity of Cr/Sc multilayers near the Sc L2,3 edge.
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| 3. |
- Bernard, M, et al.
(författare)
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Raman spectra of TiN/AlN superlattices
- 2000
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Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 380:1-2, s. 252-255
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Tidskriftsartikel (refereegranskat)abstract
- TiN (4.5 nm)/AIN (3, 6, 22 nm) superlattices deposited by DC magnetron sputtering on MgO(001) at a temperature of 850 degreesC exhibit Raman signals. They indicate N and Ti vacancies (as in thick TiN) in TiN1-x layers (x = 3 +/- 2%). x is higher for the sample with 3-nm thick AIN layers, which is ascribed to N diffusion from AIN (standing close to the TiN interfaces) to TiN. In comparison to Raman peaks of thick ALN, there are split signals of wurzite ALN phase, and a signal from another phase, which might be defective rocksalt AIN standing close to the TiN interfaces. The Raman signals clearly show interactions between ALN and TiN layers. (C) 2000 Elsevier Science B.V. All rights reserved.
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| 4. |
- Beshkova, Milena, et al.
(författare)
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Low-pressure sublimation epitaxy of AlN films - growth and characterization
- 2004
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Ingår i: Vacuum. - : Elsevier BV. - 0042-207X .- 1879-2715. ; 76, s. 143-146
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Tidskriftsartikel (refereegranskat)abstract
- Epitaxial layers of aluminum nitride have been grown at temperatures 1900-2400degreesC on 10 x 10 mm(2) 4H-SiC substrate via sublimation recondensation in an RF heated graphite furnace. The source material was polycrystalline sintered AlN. A maximum growth rate of about 100 mum/h was achieved at 2400degreesC and seed to source distance of 1 mm. The surface morphology reflects the hexagonal symmetry of the seed suggesting an epitaxial growth. This was confirmed by X-ray diffraction (XRD). The spectra showed very strong and well-defined (0002) reflection position at around 36.04degrees in symmetric Theta-2Thetascans for all samples. Micro-Raman spectroscopy reveals that the films have a wurtzite structure. It is evidenced by the appearance of the A(1) (TO) (at 601 cm(-1)) and E-2((2)) (at 651 cm(-1)) lines in the spectra. Secondary-ion mass spectroscopy (SIMS) results showed a low concentration of carbon incorporation in the AlN films. A correlation between the growth conditions and properties of the AlN layers was established.
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| 5. |
- Beshkova, Milena, et al.
(författare)
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Properties of AlN layers grown by sublimation epitaxy
- 2003
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Ingår i: Materials Science Forum, Vols. 433-436. ; , s. 995-998
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Konferensbidrag (refereegranskat)abstract
- Epitaxial layers of aluminum nitride (AlN)less than or equal to 80 mum thick have been grown at the temperatures 1900 and 2100 degreesC on 10x10mm(2) 4H-SiC substrates via sublimation recondensation in a RF heated graphite furnace. The source material was polyerystalline sintered AlN. A maximum growth rate of 80 mum/h was achieved at 2100degreesC and seed to source separation of I mm. The surface morphology reflects the hexagonal symmetry of the seed that suggesting an epitaxial growth. All crystals show strong and well defined single crystalline XRD patterns. Only the (002) reflection positioned at around 36.04 was observed in symmetric Theta-2Theta scan. The rocking curves FWHM (full width half maximum) and peak positions arc reported.
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| 6. |
- Beshkova, Milena, et al.
(författare)
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Sublimation epitaxy of AIN layers on 4H-SiC depending on the type of crucible
- 2003
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Ingår i: Journal of materials science. Materials in electronics. - 0957-4522 .- 1573-482X. ; 14:10-12, s. 767-768
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Tidskriftsartikel (refereegranskat)abstract
- Epitaxial layers of aluminum nitride less than or equal to335 mum thick have been grown attemperatures of 1900 and 2100degreesC on 10 x 10 mm(2) (0001)-oriented alpha(4H) silicon carbide (SiC), with growth times of 1 and 4h, via sublimation-recondensation in a RF-heated graphite furnace. The source material was polycrystalline AIN. The sublimation process was performed in three types of graphite (C) crucible: C-1, C-2 with inner diameters of 35 and 51 mm, respectively, and C-3 with the same inner diameter as C-1, but coated with a layer of TaC. The surface morphology reflects the hexagonal symmetry of the substrate, suggesting an epitaxial growth for samples grown in C-1 and C-3 crucibles for all growth conditions. The same symmetry is observed for AIN layers grown in the C-2 crucible, but only at 2100degreesC. X-ray diffraction analyses confirm the epitaxial growth of AIN samples with the expected hexagonal symmetry. A high-resolution X-ray diffractometer was used to assess the quality of the single crystals. A full width at half maximum of 242 arcsec was achieved for an AIN layer grown in the crucible coated with TaC. (C) 2003 Kluwer Academic Publishers.
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| 7. |
- Birch, Jens, et al.
(författare)
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Recent advances in ion-assisted growth of Cr/Sc multilayer X-ray mirrors for the water window
- 2002
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Ingår i: Vacuum. - 0042-207X .- 1879-2715. ; 68:3, s. 275-282
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Tidskriftsartikel (refereegranskat)abstract
- Cr/Sc multilayer X-ray mirrors intended for normal incidence reflection in the water window wavelength range, lambda=[2.4-4.4 nm], have been grown by ion-assisted sputter deposition and characterized using soft and hard X-ray reflectivity. By extracting low-energy ions, with energies, E-ion, ranging from 9 to 113 eV and with ion-to-metal flux ratios, Phi, between 0.76 and 23.1, from the sputtering plasma to the growing film, the nano-structure of the multilayer interfaces could be modified. A significantly increased soft X-ray reflectivity, using lambda = 3.374 nm, for Cr/Sc multilayers with layer thicknesses in the range 0.4-2.8 nm, was obtained when high ion-to-metal flux ratios, Phi(Cr) = 7.1 and Phi(Sc) = 23.1, and low energy ions, E-ion = 9eV, were used. An experimental reflectivity of 5.5% was obtained at 76degrees for a multilayer with 400 bi-layers. Simulations of the reflectivity data showed that the interface widths are < 0.425 nm. It could be concluded that roughness of low spatial frequency is reduced at lower ion energies than the high spatial frequency which was eliminated at the expense of intermixing at the interfaces at higher ion energies. The predicted performance of normal incidence multilayer mirrors grown at optimum conditions and designed for lambda = 3.374 and 3.115 nm indicates possible reflectivities of 6.5% and 14%, respectively.
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| 8. |
- Blomqvist, Peter
(författare)
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Structural and Magnetic Properties of Fe/Co (001) and Fe/V (001) Superlattices
- 2001
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- The structural and magnetic properties of Fe/Co (001) and Fe/V (001) superlattices have been investigated. The thin film structures were deposited on MgO (001) substrates using a four source ultra-high-vacuum based sputtering equipment.Reflection high energy electron diffraction showed that the body-centered cubic phase of Co could be stabilized up to a thickness of about eight atomic monolayers. X-ray diffraction measurements confirmed that the Fe/Co superlattices were single-crystalline with a pure body-centered cubic structure. The crystalline quality and the interface profile were found to be strongly dependent on the growth temperature. Furthermore, the Fe/Co superlattices were also found to exhibit novel magnetic properties. The first order magnetic anisotropy constant for the body-centered cubic Co phase was determined to be negative with a magnitude of 110 kJ/m3. Magnetization and Mössbauer measurements showed that the Fe and Co magnetic moments in the superlattices were enhanced. Spin polarized neutron reflectometry proved that all the magnetic moments were collinear.The interlayer exchange coupling and the giant magnetoresistance effect in Fe/V superlattices were also studied. The strength of the coupling was found to be dependent on the thickness of the Fe and the V layers. This was also true for the giant magnetoresistance effect. Mössbauer measurements showed that the V-on-Fe interfaces (V deposited on Fe) were more abrupt and less diffuse than the Fe-on-V interfaces. Finally, the lattice parameters of a series of different Fe/V superlattices were determined by x-ray diffraction. The experimental lattice expansion was found to be in good agreement with a simple theoretical model.
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| 9. |
- Buyanova, Irina, 1960-, et al.
(författare)
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Direct experimental evidence for unusual effects of hydrogen on the electronic and vibrational properties of GaNxP1−x alloys : a proof for a general property of dilute nitrides
- 2004
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Ingår i: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 70:24, s. 245215-245219
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Tidskriftsartikel (refereegranskat)abstract
- Direct experimental evidence for dramatic effects of hydrogen incorporation on the electronic structure and lattice properties of GaNxP1−x alloys is presented. By employing photoluminescence excitation spectroscopy, postgrowth hydrogenation is shown to reopen the band gap of the GaNP alloys and to efficiently reduce the N-induced coupling between the conduction band states. By Raman spectroscopy, these effects are shown to be accompanied by hydrogen-induced breaking of the Ga-P bond in the alloy, evident from disappearance of the corresponding vibrational mode. According to the performed Raman and x-ray diffraction measurements, the hydrogenation is also found to cause a strong expansion of the GaNP lattice, which changes the sign of strain from tensile in the as-grown GaNP epilayers to compressive in the posthydrogenated structures, due to the formation of complexes between N and H.
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| 10. |
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