| 1. |
- Jafari, Mohammad Javad, et al.
(författare)
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Thermal degradation of TiN and TiAlN coatings during rapid laser treatment
- 2021
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Ingår i: Surface & Coatings Technology. - : ELSEVIER SCIENCE SA. - 0257-8972 .- 1879-3347. ; 422
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Tidskriftsartikel (refereegranskat)abstract
- In this research, a fundamental study was conducted on damage behavior of cathodic arc evaporated TiN and Ti0.44Al0.56N coatings, in terms of oxidation and cracking/spallation, when they were exposed to single-pulse laser treatment in a temperature range of 1200-2100 degrees C. Moreover, a multiple-pulse laser treatment was designed to apply thermo-mechanical loads on the coatings in order to evaluate their thermal degradation during rapid heating/cooling cycles between 200 and 1200 degrees C. Single-pulse treatment of TiN up to 1500 degrees C led to the intercolumnar cracking and formation of ultrafine TiO grains. An increase in temperature up to 2100 degrees C resulted in a notable bulging of the surface, and formation of TiO2 of various morphologies such as grainy structure, dense molten and re-solidified structure, droplets from melt expulsion and, more interestingly, nanofibers. Multiplepulse treatment of TiN was accompanied by a severe cracking and spallation, which divided the surface into two layers: a heavily cracked top layer composed of dense TiO2 grains, and a bottom layer having porous TiO2 grains indicating incomplete oxidation. Conversely, Ti0.44Al0.56N did not show any visible cracking and oxidation after single-pulse treatment. Multiple-pulse treatment did not also yield cracking and spallation for Ti0.44Al0.56N, and its ablated region consisted of TiO2 grains combined with thin Al2O3 platelets. An excellent combination of properties including higher oxidation resistance and greater fracture toughness at high temperatures led to a higher thermal damage resistance for Ti0.44Al0.56N coating compared to TiN when undergoing single- and multiple-pulse laser treatments.
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| 2. |
- Nayak, Sanjay Kumar, et al.
(författare)
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Dynamic evolution of internal stress, grain growth, and crystallographic texture in arc-evaporated AlTiN thin films using in-situ synchrotron x-ray diffraction
- 2024
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Ingår i: Acta Materialia. - : PERGAMON-ELSEVIER SCIENCE LTD. - 1359-6454 .- 1873-2453. ; 272
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Tidskriftsartikel (refereegranskat)abstract
- Understanding the nucleation and growth of polycrystalline thin films is a long-standing goal. Numerous studies have been done to determine the grain size, stress, and the ideal crystallographic orientation in films. The majority of past studies have either employed an ex-situ methodology or only monitor the development of macroscopic stress in real-time. There has never been any research done on the simultaneous changes in crystallographic texture, grain size, and microscopic stress in polycrystalline thin films. In this study, we investigated the generation and temporal evolution of texture, grain size, and internal stress in cathodic arc evaporated Al0.50Ti0.50N thin films using a bespoke deposition apparatus designed for use with 2-dimensional synchrotron x-ray diffraction technique. The influence of the substrate temperature is investigated in terms of the emergence and development of texture, grain size and stress evolution. A dynamic evolution of the crystallographic texture is observed as the overall film thickness varies. We clearly resolved two regime of films growth based on stress evolution. Beyond a threshold grain size (similar to 14 nm), the stress scales inversely to the average grain sizes, and as the film thickness increases, immediate compressive stress relaxation was seen. An extensive ex-situ evaluation of thin films using electron microscopies and electron diffraction was performed to support the in-situ x-ray diffraction results.
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| 3. |
- Ali, Sharafat, Associate Professor, 1976-, et al.
(författare)
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Effect of O/N content on the phase, morphology, and optical properties of titanium oxynitride thin films
- 2023
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Ingår i: Journal of Materials Science. - : Springer. - 0022-2461 .- 1573-4803. ; 58, s. 10975-10985
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Tidskriftsartikel (refereegranskat)abstract
- Phase formation, morphology, and optical properties of Ti(O,N) thin films with varied oxygen-to- nitrogen ration content were investigated. The films were deposited by magnetron sputtering at 500°C on Si(100) and c-plane sapphire substrate. A competition between a NaCl B1 structure TiN1-xOx, a rhombohedral structure Ti2(O1-yNy)3, and an anatase structure Ti(O1-zNz)2 phase was observed. While the N-rich films were composed of a NaCl B1 TiN1-xOx phase, an increase of oxygen in the films yields the growth of rhombohedral Ti2(O1-yNy)3 phase and the oxygen-rich films are comprised of a mixture of the rhombohedral Ti2(O1-yNy)3 phase and anatase Ti(O1-zNz)2 phase. The optical properties of the films were correlated to the phase composition and the observation of abrupt changes in terms of refractive index and absorption coefficient. The oxide film became relatively transparent in the visible range while the addition of nitrogen into films increases the absorption. The oxygen rich-samples have bandgap values below 3.75 eV, which is higher than the value for pure TiO2, and lower than the optical bandgap of pure TiN. The optical properties characterizations revealed the possibility of adjusting the band gap and the absorption coefficient depending on the N-content, because of the phases constituting the films combined with anionic substitution.
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| 4. |
- Alves Machado Filho, Manoel, et al.
(författare)
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Self-Induced Core–Shell InAlN Nanorods: Formation and Stability Unraveled by Ab Initio Simulations
- 2023
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Ingår i: ACS Nanoscience Au. - : American Chemical Society (ACS). - 2694-2496. ; 3:1, s. 84-93
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Tidskriftsartikel (refereegranskat)abstract
- By addressing precursor prevalence and energetics using the DFT-based synthetic growth concept (SGC), the formation mechanism of self-induced InAlN core–shell nanorods (NRs) synthesized by reactive magnetron sputter epitaxy (MSE) is explored. The characteristics of In- and Al-containing precursor species are evaluated considering the thermal conditions at a typical NR growth temperature of around 700 °C. The cohesive and dissociation energies of In-containing precursors are consistently lower than those of their Al-containing counterparts, indicating that In-containing precursors are more weakly bonded and more prone to dissociation. Therefore, In-containing species are expected to exhibit lower abundance in the NR growth environment. At increased growth temperatures, the depletion of In-based precursors is even more pronounced. A distinctive imbalance in the incorporation of Al- and In-containing precursor species (namely, AlN/AlN+, AlN2/AlN2+, Al2N2/Al2N2+, and Al2/Al2+ vs InN/InN+, InN2/InN2+, In2N2/In2N2+, and In2/In2+) is found at the growing edge of the NR side surfaces, which correlates well with the experimentally obtained core–shell structure as well as with the distinctive In-rich core and vice versa for the Al-rich shell. The performed modeling indicates that the formation of the core–shell structure is substantially driven by the precursors’ abundance and their preferential bonding onto the growing edge of the nanoclusters/islands initiated by phase separation from the beginning of the NR growth. The cohesive energies and the band gaps of the NRs show decreasing trends with an increment in the In concentration of the NRs’ core and with an increment in the overall thickness (diameter) of the NRs. These results reveal the energy and electronic reasons behind the limited growth (up to ∼25% of In atoms of all metal atoms, i.e., InxAl1–xN, x ∼ 0.25) in the NR core and may be qualitatively perceived as a limiting factor for the thickness of the grown NRs (typically <50 nm).
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| 5. |
- Backis, A., et al.
(författare)
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Time- and energy-resolved effects in the boron-10 based multi-grid and helium-3 based thermal neutron detectors
- 2021
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Ingår i: Measurement science and technology. - : IOP PUBLISHING LTD. - 0957-0233 .- 1361-6501. ; 32:3
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Tidskriftsartikel (refereegranskat)abstract
- The boron-10 based multi-grid detector is being developed as an alternative to helium-3 based neutron detectors. At the European Spallation Source, the detector will be used for time-of-flight neutron spectroscopy at cold to thermal neutron energies. The objective of this work is to investigate fine time- and energy-resolved effects of the Multi-Grid detector, down to a few mu eV, while comparing it to the performance of a typical helium-3 tube. Furthermore, it is to characterize differences between the detector technologies in terms of internal scattering, as well as the time reconstruction of similar to mu s short neutron pulses. The data were taken at the Helmholtz Zentrum Berlin, where the Multi-Grid detector and a helium-3 tube were installed at the ESS test beamline, V20. Using a Fermi-chopper, the neutron beam of the reactor was chopped into a few tens of mu s wide pulses before reaching the detector, located a few tens of cm downstream. The data of the measurements show an agreement between the derived and calculated neutron detection efficiency curve. The data also provide fine details on the effect of internal scattering, and how it can be reduced. For the first time, the chopper resolution was comparable to the timing resolution of the Multi-Grid detector. This allowed a detailed study of time- and energy resolved effects, as well as a comparison with a typical helium-3 tube.
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| 6. |
- Bairagi, Samiran, et al.
(författare)
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Formation of quaternary Zn(AlxGa1−x)2O4 epilayers driven by thermally induced interdiffusion between spinel ZnGa2O4 epilayer and Al2O3 substrate
- 2023
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Ingår i: Materials Today Advances. - : Elsevier. - 2590-0498. ; 20
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Tidskriftsartikel (refereegranskat)abstract
- Zinc aluminogallate, Zn(AlxGa1−x)2O4 (ZAGO), a single-phase spinel structure, offers considerable potential for high-performance electronic devices due to its expansive compositional miscibility range between aluminum (Al) and gallium (Ga). Direct growth of high-quality ZAGO epilayers however remains problematic due to the high volatility of zinc (Zn). This work highlights a novel synthesis process for high-quality epitaxial quaternary ZAGO thin films on sapphire substrates, achieved through thermal annealing of a ZnGa2O4 (ZGO) epilayer on sapphire in an ambient air setting. In-situ annealing x-ray diffraction measurements show that the incorporation of Al in the ZGO epilayer commenced at 850 °C. The Al content (x) in ZAGO epilayer gradually increased up to around 0.45 as the annealing temperature was raised to 1100 °C, which was confirmed by transmission electron microscopy (TEM) and energy dispersive x-ray spectroscopy. X-ray rocking curve measurement revealed a small full width at half maximum value of 0.72 °, indicating the crystal quality preservation of the ZAGO epilayer with a high Al content. However, an epitaxial intermediate �–(AlxGa1−x)2O3 layer (� - AGO) was formed between the ZAGO and sapphire substrate. This is believed to be a consequence of the interdiffusion of Al and Ga between the ZGO thin film and sapphire substrate. Using density functional theory, the substitution cost of Ga in sapphire was determined to be about 0.5 eV lower than substitution cost of Al in ZGO. Motivated by this energetically favorable substitution, a formation mechanism of the ZAGO and AGO layers was proposed. Spectroscopic ellipsometry studies revealed an increase in total thickness of the film from 105.07 nm (ZGO) to 147.97 nm (ZAGO/AGO) after annealing to 1100 °C, which were corroborated using TEM. Furthermore, an observed increase in the direct (indirect) optical bandgap from 5.06 eV (4.7 eV) to 5.72 eV (5.45 eV) with an increasing Al content in the ZAGO layer further underpins the formation of a quaternary ZAGO alloy with a tunable composition.
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| 7. |
- Bairagi, Samiran, et al.
(författare)
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Glancing Angle Deposition and Growth Mechanism of Inclined AlN Nanostructures Using Reactive Magnetron Sputtering
- 2020
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Ingår i: Coatings. - : MDPI. - 2079-6412. ; 10:8
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Tidskriftsartikel (refereegranskat)abstract
- Glancing angle deposition (GLAD) of AlN nanostructures was performed at room temperature by reactive magnetron sputtering in a mixed gas atmosphere of Ar and N-2. The growth behavior of nanostructures shows strong dependence on the total working pressure and angle of incoming flux. In GLAD configuration, the morphology changed from coalesced, vertical nanocolumns with faceted terminations to highly inclined, fan-like, layered nanostructures (up to 38 degrees); while column lengths decreased from around 1743 to 1068 nm with decreasing pressure from 10 to 1.5 mTorr, respectively. This indicates a change in the dominant growth mechanism from ambient flux dependent deposition to directional ballistic shadowing deposition with decreasing working pressures, which is associated with the change of energy and incident angle of incoming reactive species. These results were corroborated using simulation of metal transport (SiMTra) simulations performed at similar working pressures using Ar and N separately, which showed the average particle energy and average angle of incidence decreased while the total average scattering angle of the metal flux arriving at substrate increased with increasing working pressures. Observing the crystalline orientation of GLAD deposited wurtzite AlN nanocolumns using X-ray diffraction (XRD), pole-figure measurements revealedc-axis growth towards the direction of incoming flux and a transition from fiber-like to biaxial texture took place with increasing working pressures. Under normal deposition conditions, AlN layer morphology changed from {0001} to {10 (1) over bar1} with increasing working pressure because of kinetic energy-driven growth.
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| 8. |
- Bairagi, Samiran, et al.
(författare)
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Zinc gallate (ZnGa2O4) epitaxial thin films : determination of optical properties and bandgap estimation using spectroscopic ellipsometry
- 2022
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Ingår i: Optical Materials Express. - : Optica Publishing Group. - 2159-3930 .- 2159-3930. ; 12:8, s. 3284-3295
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Tidskriftsartikel (refereegranskat)abstract
- Electronic grade ZnGa2O4 epitaxial thin films were grown on c-plane sapphire substrates by metal-organic chemical vapor deposition and investigated using spectroscopic ellipsometry. Their thickness, roughness and optical properties were determined using a Multiple Sample Analysis based approach by the regression analysis of optical model and measured data. These samples were then compared to samples which had undergone ion etching, and it was observed that etching time up to four minutes had no discernible impact on its optical properties. Line shape analysis of resulting absorption coefficient dispersion revealed that ZnGa(2)O(4 )exhibited both direct and indirect interband transitions. The modified Cody formalism was employed to determine their optical bandgaps. These values were found to be in good agreement with values obtained using other popular bandgap extrapolation procedures. Published by Optica Publishing Group under the terms of the Creative Commons Attribution 4.0 License. Further distribution of this work must maintain attribution to the author(s) and the published articles title, journal citation, and DOI.
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| 9. |
- Bakhit, Babak, et al.
(författare)
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Microstructure, mechanical, and corrosion properties of Zr1-xCrxBy diboride alloy thin films grown by hybrid high power impulse/DC magnetron co-sputtering
- 2022
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Ingår i: Applied Surface Science. - : Elsevier. - 0169-4332 .- 1873-5584. ; 591
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Tidskriftsartikel (refereegranskat)abstract
- We study microstructure, mechanical, and corrosion properties of Zr1-xCrxBy coatings deposited by hybrid high power impulse/DC magnetron co-sputtering (CrB2-HiPIMS/ZrB2-DCMS). Cr/(Zr + Cr) ratio, x, increases from 0.13 to 0.9, while B/(Zr + Cr) ratio, y, decreases from 2.92 to 1.81. As reference, ZrB2.18 and CrB1.81 layers are grown at 4000 W DCMS. ZrB2.18 and CrB1.81 columns are continual from near substrate toward the surface with open column boundaries. We find that the critical growth parameter to achieve dense films is the ratio of Cr+- dominated ion flux and the (Zr + B) neutral flux from the ZrB2 target. Thus, the alloys are categorized in two groups: films with x < 0.32 (low Cr+/(Zr + B) ratios) that have continuous columnar growth, rough surfaces, and open column boundaries, and films with x >= 0.32 (high Cr+/(Zr + B) ratios) that Cr+-dominated ion fluxes are sufficient to interrupt continuous columns, resulting in smooth surface and dense fine-grain microstructure. The pulsed metal-ion irradiation is more effective in film densification than continuous Ar+ bombardment. Dense Zr0.46Cr0.54B2.40 and Zr0.10Cr0.90B1.81 alloys are hard (> 30 GPa) and almost stress-free with relative nano indentation toughness of 1.3 MPa root m and 2.3 MPa root m, respectively, and remarkedly low corrosion rates (~& nbsp;1.0 x 10(-6) mA/cm(2) for Zr0.46Cr0.54B2.40 and~& nbsp; 2.1 x 10(-6) mA/cm(2) for Zr0.10Cr0.90B1.81).
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| 10. |
- Bangolla, Hemanth Kumar, et al.
(författare)
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Composition-dependent photoconductivities in indium aluminium nitride nanorods grown by magnetron sputter epitaxy
- 2022
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Ingår i: Nanoscale Advances. - : Royal Society of Chemistry. - 2516-0230. ; 4:22, s. 4886-4894
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Tidskriftsartikel (refereegranskat)abstract
- Photoconduction (PC) properties were investigated for ternary indium aluminium nitride (InxAl1-xN) nanorods (NRs) with different indium compositions (x) from 0.35 to 0.68, as grown by direct-current reactive magnetron sputter epitaxy. Cross-sectional scanning transmission electron microscopy (STEM) reveals single-crystal quality of the vertically aligned InxAl1-xN NRs. Single-rod photodetector devices with good ohmic contacts were fabricated using the focused-ion-beam technique (FIB), where the In-rich In0.68Al0.32N NR exhibits an optimal photocurrent responsivity of 1400 A W-1 and photoconductive gain of 3300. A transition from a positive photoresponse to a negative photoresponse was observed, while increasing the In composition x from 0.35 to 0.57. The negative PC was further enhanced by increasing x to 0.68. A model based on the coexistence and competition of deep electron trap states and recombination centers was proposed to explain the interesting composition-dependent PC in these ternary III-nitride 1D nanostructures.
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