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Träfflista för sökning "WFRF:(Blank A.) srt2:(2000-2004)"

Sökning: WFRF:(Blank A.) > (2000-2004)

  • Resultat 1-8 av 8
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1.
  • Buga, Sergei G., et al. (författare)
  • Pressure effect on electrical properties and photoluminescence spectra of solid C60 and C70 fullerenes
  • 2001
  • Ingår i: Frontiers of High Pressure Research II: Application of High Pressure to Low-Dimensional Novel Electronic Materials. - Dordrecht : Springer/Kluwer. - 9781402001604 ; , s. 483-491
  • Konferensbidrag (refereegranskat)abstract
    • Electrical resistivity of crystalline and disordered fullerite samples obtained by static high-pressure-high-temperature treatment of C-60 and C-70 at P = 12.5 GPa and T = 820-1500 K was investigated in the temperature range of 2.4-300 K, Room-temperature activation energy of charge carriers was found to be in the range 40-200 meV. T-3/2 and T-4 dependencies of conductivity versus temperature were revealed both in crystalline and disordered structures. Photoluminescence spectra of C-60 samples treated at P = 13 GPa. T = 770-1470 K show 50 nm short-wave length shift of characteristic 750 nm PL band.
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2.
  • Blank, T. V., et al. (författare)
  • Temperature dependence of the quantum efficiency of 4H-SiC-Based Schottky photodiodes
  • 2001
  • Ingår i: Technical physics letters. - : Pleiades Publishing Ltd. - 1063-7850 .- 1090-6533. ; 27:9, s. 776-778
  • Tidskriftsartikel (refereegranskat)abstract
    • Using metal-semiconductor structures based on a pure epitaxial layer of n-4H-SiC (N-d - N-a = 4 x 10(15) cm(-3)), UV photodetectors were created with a maximum photosensitivity at 4.9 eV and a quantum efficiency up to 0.3 el/ph. The photosensitivity spectrum of the base structure is close to the spectrum of bactericidal action of the UV radiation. For photon energies in the 3.4 - 4.7 eV range, the quantum efficiency of the photoelectric conversion exhibits rapid growth with the temperature above 300 K, which is explained by the participation of photons in indirect interband transitions. This growth is not manifested when the photon energy is close to the threshold energy of direct optical transitions in the nondirect-bandgap semiconductor, which allows the threshold energy to be evaluated (similar to4.9 eV).
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4.
  • Shoenfeld, Y, et al. (författare)
  • Prevalence and clinical correlations of antibodies against six beta 2-glycoprotein-I-related peptides in the antiphospholipid syndrome
  • 2003
  • Ingår i: Journal of Clinical Immunology. - 0271-9142. ; 23:5, s. 377-383
  • Tidskriftsartikel (refereegranskat)abstract
    • Two-hundred ninety five patients with the antiphospholipid syndrome (APS) were studied for the presence of antibodies against six anti-beta2GPI-related peptides Abs. The prevalence of a wide spectrum of clinical and laboratory parameters of APS was evaluated in all patients, and correlated with the presence of each anti-beta2GPI peptide antibody. The rates of the various antipeptides Abs ranged from 18.0 to 63.7%. Altogether, 87.1% of the patients had antibody reactivity against at least one of the six beta2GPI-related peptides. A high degree of simultaneous reactivity against several beta2GPI-peptides was found. Positive and negative correlations were found between several antipeptides Abs and the rates of thrombosis and fetal loss. Our results point to a heterogeneous activity of antiphospholipid Abs in APS patients, directed, often concurrently, against various epitopes of the beta2GPI molecule. Evaluation of APS patients for the presence of specific antipeptides Abs may be of a value in predicting the risk for future thrombotic and obstetrical complication, as well as for specific therapeutic purposes.
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5.
  • Buga, Sergei G., et al. (författare)
  • Dissociation energy of 3D-polymeric C60 : Calorimetric study and structural analysis
  • 2001
  • Ingår i: Electronic Properties of Novel Materials - Science and Technology of Molecular Nanostructures. - Melville, NY : American Institute of Physics. - 0735400334 ; , s. 49-53
  • Konferensbidrag (refereegranskat)abstract
    • Annealing of 2D- and 3D-polymeric C[sub60] fullerene obtained under pressures of 9.5 and 12.5 GPa and temperatures of 670 and 770 K has been investigated by DSC in the range 240–640 K. An endothermal heat effect was observed with a peak maximum just below 540 K, a temperature characteristic for breakdown of (2+2) intermolecular links in dimers, 1D and 2D polymers. Exothermal effects, starting from 380 K, were observed for the first time in polymeric fullerenes. These effects are attributed to relaxation processes and to breakdown of other types of intermolecular bonds such as common four-sided rings and (3+3) interlinks.
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6.
  • Buga, Sergei G., et al. (författare)
  • Semimetallic and semiconductor properties of some superhard and ultrahard fullerites in the range 300-2 K
  • 2000
  • Ingår i: Proceedings of the 5th IUMRS International Conference on Advanced Materials, Beijing 1999. - : Elsevier B.V.. ; , s. 1009-1015
  • Konferensbidrag (refereegranskat)abstract
    • Electrical resistivity and magnetoresistance were measured on samples with disordered structures synthesized from pure C60 and C70 at pressures in the range 8–12.5 GPa and temperatures of 900–1500 K. Different types of behaviour were observed: semimetallic, VRH and semiconducting, depending on the degree of disorder and the particular short-range order of the samples. A negative magnetoresistance was observed at T<10 K on samples with a semimetallic type of conductivity synthesized at 8 GPa pressure. The temperature dependence of resistivity in the sample with a disordered crystalline structure based on 3D-polymerized C60 molecules fits Mott's law for hopping conductivity. T3/2, T2 and T4 dependencies of conductivity are observed for samples with densities of 2.8 and 3.05 g/cm3 synthesized at a pressure of 12.5 GPa. The effect of hydrostatic pressure on the resistivity of cross-linked layered carbon structures obtained from C60 at P=8 GPa, T=1600 K was investigated up to 0.6 GPa at room temperature. An approximately linear decrease of resistivity was observed with a very small value of the derivative d ln ρ/dp=0.06 /GPa, which correlates with a very low compressibility of the material.
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7.
  • Buga, Sergei G., et al. (författare)
  • Synthesis of superhard 3D-polymeric C60 fullerites from rhombohedral 2D-polymer by high-pressure-high-temperature treatment.
  • 2003
  • Ingår i: High Pressure Research vol. 23, issue 3. - London : Taylor & Francis. ; , s. 259-264
  • Konferensbidrag (refereegranskat)abstract
    • Rhombohedral C60 polymer was subjected to high-pressure-high-temperature treatment at P =13 GPa, T =620-1620 K. After quenching, crystalline and disordered structures with densities in the range of 2.1-2.9 g cm-1 were obtained. The structures of the samples have been investigated by powder X-ray diffraction and Raman scattering. DSC analysis showed a transformation of the polymeric structure into monomeric on annealing in the range 400-640 K. The temperature dependence of the electrical resistance of samples with disordered structure was measured in the range 2.5-300K. For different samples, the conductivity was proportional to T1/2, T3/2, T4 and exp(-1/T1/4).
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8.
  • Shoenfeld, Yehuda, et al. (författare)
  • Features associated with epilepsy in the antiphospholipid syndrome
  • 2004
  • Ingår i: Journal of Rheumatology. - 0315-162X. ; 31:7, s. 1344-1348
  • Tidskriftsartikel (refereegranskat)abstract
    • OBJECTIVE: To assess the frequency of epilepsy in primary and secondary antiphospholipid syndrome (APS); to analyze the clinical and laboratory features characterizing those with epilepsy in a cohort of 538 patients with APS; and to find associated features that would suggest risk factors for epilepsy in APS. METHODS: We analyzed the clinical features of patients with APS who had epilepsy and compared them to the clinical features of non-epileptic APS patients. RESULTS: Of 538 APS patients, 46 (8.6%) had epilepsy. Epilepsy was more prevalent among APS secondary to systemic lupus erythematosus (SLE) compared to primary APS (13.7% vs 6%; p < 0.05). The patients with epilepsy had a higher prevalence of central nervous system (CNS) manifestations including focal ischemic events (strokes or transient ischemic events, 54.3% vs 24.6%; p < 0.0001) and amaurosis fugax (15.2% vs 4.9%; p < 0.05). APS patients with epilepsy had a higher frequency of valvular pathology (30.4% vs 14.6%; p < 0.01), thrombocytopenia (43.5% vs 25%; p < 0.05), and livedo reticularis (26.1% vs 11.5%; p < 0.01). The multivariate logistic regression analysis found CNS thromboembolic events as the most significant factor associated with epilepsy, with an odds ratio (OR) of 4.05 (95% confidence interval, CI: 2.05-8), followed by SLE (OR 1.4, 95% CI 1.2-4.7), and valvular vegetations (OR 2.87, 95% CI 1-8.27). CONCLUSION: Epilepsy is common in APS and most of the risk seems to be linked to vascular disease as manifested by extensive CNS involvement, valvulopathy, and livedo reticularis and to the presence of SLE. These factors, however, explain only part of the increased occurrence of epilepsy in APS and other causes such as direct immune interaction in the brain should be investigated.
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