Transparent Ru–Si–O/In–Ga–Zn–O MESFETs on flexible polymer substrates

• With the development of novel device applications, e.g., in the field of Internet of Things or point-of-care personalized diagnostic systems, came an increased demand for MESFETs for fast and low-power consumption integrated circuits and active-matrix displays. In this paper, we present fabrication and characterization of transparent Ru–Si–O/In–Ga–Zn–O MESFETs on flexible substrates. The use of transparent conducting oxide, namely, Ru–Si–O, as Schottky gate electrode, allows for processing the devices at room temperature, enabling the utilization of such low-temperature substrates as polyethylene terephthalate foil and paper. It was shown that tuning the device geometry allows realization of transistors providing on-current up to 2 mA, while the highest on-to-off current ratio equals 2 × 105, with off-current below 1 nA, carrier mobility in the channel exceeds 9 cm2·V−1·s−1, and subthreshold swing is below 250 mV·decade−1

Ämnesord

NATURVETENSKAP  -- Data- och informationsvetenskap -- Medieteknik (hsv//swe)

NATURAL SCIENCES  -- Computer and Information Sciences -- Media and Communication Technology (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Kommunikationssystem (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Communication Systems (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Amorphous In–Ga–Zn–O (a-IGZO)

MESFETs

Schottky barrier

Ru–Si–O

Transparent amorphous oxide semiconductors (TAOSs)

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