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Träfflista för sökning "WFRF:(Bouziani I) srt2:(2020)"

Sökning: WFRF:(Bouziani I) > (2020)

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1.
  • Bouziani, I., et al. (författare)
  • Ab initio study of electronic and optical properties of penta-SiC2 and-SiGeC4 monolayers for solar energy conversion
  • 2020
  • Ingår i: Superlattices and Microstructures. - : ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD. - 0749-6036 .- 1096-3677. ; 142
  • Tidskriftsartikel (refereegranskat)abstract
    • In the current study, we explore theoretically electronic and optical properties of penta-SiC2 and -SiGeC4 monolayers based on ab initio computations and utilizing modified Becke-Johnson generalized gradient-approximation (mBJ-GGA) within the density functional theory. The calculated results show that both 2D penta-SiC2 and -SiGeC4 are structurally stable, according to their negative formation energy. Furthermore, we have found that the penta-SiC2 and -SiGeC4 semiconductors show indirect and moderate band gaps of 1.75 and 1.62 eV by employing mBJGGA functional, respectively. Also, these systems present sigma- and pi-bond between two nearest neighbor carbon atoms by overlapping sp(2)-sp(2) and p-p orbitals, respectively, as well as an ionic bond between two nearest neighbor Si-C and Ge-C atoms. Additionally, we have shown that the considered compounds exhibit small reflectivity and high absorption peaks in visible region with the shift of absorption edge of 2D penta-SiGeC4 to the low energy visible region due to its small band gap compared to that of 2D penta-SiC2. These findings make both penta-SiC2 and -SiGeC4 monolayer semiconductors promising candidates for photovoltaic technology.
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2.
  • Bouziani, I, et al. (författare)
  • High Curie temperature in halfmetallic ferromagnets (Zn, Cr, Ti)Se and (Zn, Cr, Ti)Te for spintronic devices : Ab initio and Monte Carlo treatments
  • 2020
  • Ingår i: Materials Science & Engineering. - : ELSEVIER. - 0921-5107 .- 1873-4944. ; 253
  • Tidskriftsartikel (refereegranskat)abstract
    • The current study is purposed to investigate the magnetic- and electronic-properties of Zn1-2xCrxTixSe and Zn1-2xCrxTixTe systems by means of Ab initio and Monte Carlo calculations. We have predicted that the two systems show ferromagnetic halfmetallic behavior with 100% spin polarization at the Fermi level and their ferromagnetic stability is attributed to the double exchange coupling. Our calculations suggest further that these compounds exhibit a 2nd order ferromagnetic transition with high Curie temperature. Thus, (Zn, Cr, Ti)Se and (Zn, Cr, Ti)Te compounds are strong candidates for spintronic devices, especially for magnetic random access memories (MRAM) based on the spin transfer torque.
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3.
  • Bouziani, I, et al. (författare)
  • Electronic and optical properties of ZnO nanosheet doped and codoped with Be and/or Mg for ultraviolet optoelectronic technologies : density functional calculations
  • 2020
  • Ingår i: Physica Scripta. - : IOP PUBLISHING LTD. - 0031-8949 .- 1402-4896. ; 95:1
  • Tidskriftsartikel (refereegranskat)abstract
    • Theoretically, the density functional calculations have been effectuated for investigating electronic and optical properties of zinc oxide nanosheet doped and codoped with Be and/or Mg utilizing the generalized gradient approximation modified Becke-Johnson (GGA-mBJ) approach. The computed results show that the ZnBeO, ZnMgO and ZnBeMgO in nanosheet structure, referring to their low formation energy values, are more stable than those in bulk one. Furthermore, the bandgap of ZnO monolayer can be effectively modulated through substitution of Zn atoms by Be and/or Mg. In addition to that, by incorporating Be and/or Mg, the absorption peaks of ZnO nanosheet shift into the shorter UV-wavelength side as well as its reflectivity becomes lower. These results indicate that doping and codoping process of ZnO monolayer with Be and/or Mg are two efficient ways to modulate electronic and optical properties for ultraviolet optoelectronic technologies.
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  • Resultat 1-3 av 3
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Ahuja, Rajeev, 1965- (3)
Benhouria, Y. (3)
Bouziani, I. (3)
Ainane, Abdelmajid (2)
Essaoudi, I. (2)
Kibbou, M. (2)
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Haman, Z. (2)
Essaoudi, Ismail (1)
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