| 1. |
- Bryllert, Tomas, 1974, et al.
(författare)
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A broadband heterostructure barrier varactor tripler source
- 2010
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Ingår i: 2010 IEEE MTT-S International Microwave Symposium (MTT). - 0149-645X. - 9781424460571 ; , s. 344-347
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Konferensbidrag (refereegranskat)abstract
- We present the first demonstration of a broadband Heterostructure Barrier Varactor tripler, designed to cover a major part of the WR-8 waveguide band. The source comprises a waveguide housing, a six-barrier InP-HBV diode flip-chip mounted on an AlN microstrip filter circuit. The conversion loss 3-dB bandwidth was measured to 17 % at a center frequency of 112 GHz. The maximum output power was more than 15 mW for an input power of 300 mW. There are no mechanical tuners or DC-bias, which simplifies assembly and allows for ultra-compact design.
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| 2. |
- Bryllert, Tomas, 1974, et al.
(författare)
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A monolithic 280 GHz HBV frequency tripler
- 2010
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Ingår i: IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide. - 9781424466573
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Konferensbidrag (refereegranskat)abstract
- We present the design and measurements of a Heterostructure Barrier Varactor based frequency tripler for 280 GHz. The tripler is fabricated as a monolithic circuit on an InP substrate, including the input and output waveguide probes. Several circuit versions for input power levels between 100 mW and 1W have been designed. © 2010 IEEE.
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| 3. |
- Hanning, Johanna, 1981, et al.
(författare)
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HBV MMIC frequency tripler and quintupler for high power THz applications
- 2011
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Ingår i: Millimetre Wave Days Proceedings,The 6th ESA Workshop on Millimetre-Wave Technology and Applications AND The 4th Global Symposium on Millimeter Waves GSMM2011, May 23rd – May 25th, 2011, MilliLab, Espoo, Finland.
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Konferensbidrag (refereegranskat)abstract
- We present the development status of two different HBV frequency multipliers, with x3 and x5 multiplication for a 282 GHz and 470 GHz output respectively. The multipliers are designed for high power operation and fabricated in an InP monolithic process. Preliminary measurements of the x3 multiplier demonstrate 10 % conversion efficiency at 296 GHz.
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| 4. |
- Stake, Jan, 1971, et al.
(författare)
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Development of integrated submillimeter wave diodes for sources and detectors
- 2010
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Ingår i: 13th European Microwave Week 2010: Connecting the World, EuMIC 2010; Paris; France; 26 September 2010 through 1 October 2010. - 9782874870156 ; , s. 226-229
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Konferensbidrag (refereegranskat)abstract
- We present progress and status of Heterostructure Barrier Varactor multiplier sources and development of integrated Schottky diode mixers for submillimeter wave applications.
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| 5. |
- Vukusic, Josip, 1972, et al.
(författare)
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Monolithic HBV-Based 282-GHz Tripler With 31-mW Output Power
- 2012
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Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 33:6, s. 800-802
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Tidskriftsartikel (refereegranskat)abstract
- We present a heterostructure barrier varactor multiplier at 282 GHz. The tripler chip was monolithically fabricated in the InGaAs/InAlAs material system on InP as carrier substrate and mounted in a fix-tuned, waveguide block. Standard rectangular waveguides WR-10/WR-3 connect the multiplier chip to the respective input/output of the waveguide block. Measurements produced 31 mW of output power and a minimum conversion loss of 11.6 dB (7 % efficiency). The device dimensions and their electrical and thermal influence are also presented.
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| 6. |
- Bryllert, Tomas, 1974, et al.
(författare)
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A 175 GHz HBV Frequency Quintupler With 60 mW Output Power
- 2012
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Ingår i: IEEE Microwave and Wireless Components Letters. - 1558-1764 .- 1531-1309. ; 22:2, s. 76-78
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Tidskriftsartikel (refereegranskat)abstract
- In this letter, we present a fixed tuned 175 GHz frequency quintupler with 60 mW output power. The peak efficiency is 6.3% and the 3 dB bandwidth is 8 GHz. The multiplier is based on a single Heterostructure Barrier Varactor (HBV) diode that is flip-chip soldered into a microtsrip matching circuit. All the matching is done “on-chip” and there is no need for dc bias. The multiplier block is very compact (25 x 9 x 8 mm^3).
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| 7. |
- Bryllert, Tomas, 1974, et al.
(författare)
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Integrated 200–240-GHz FMCW Radar Transceiver Module
- 2013
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Ingår i: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 61:10, s. 3808-3815
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Tidskriftsartikel (refereegranskat)abstract
- We present a 220-GHz homodyne transceiver module intended for frequency modulated continuous wave radar applications. The RF transceiver circuits are fabricated on 3 µm-thick GaAs membranes, and consist of a Schottky diode based transmitter frequency doubler that simultaneously operates as a sub-harmonic downconverting mixer. Two circuits are used in a balanced configuration to improve the noise performance. The output power is >3 dBm over a 40-GHz bandwidth (BW) centered at 220 GHz, and the receiver function is characterized by a typical mixer conversion loss of 16 dB. We present radar images at 4-m target distance with up to 60-dB dynamic range using a 30-µs chirp time, and near-BW-limited range resolution. The module is intended for applications in high-resolution real-time 3-D radar imaging, and the unit is therefore designed so that it can be assembled into 1-D or 2-D arrays.
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| 8. |
- Bryllert, Tomas, 1974
(författare)
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Sub-millimeter wave diode transceivers
- 2014
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Ingår i: International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz. - 2162-2027 .- 2162-2035. - 9781479938773 ; , s. Art. no. 6956019-
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Konferensbidrag (refereegranskat)abstract
- We present sub-millimeter wave transceiver modules intended for imaging radar applications. In particular a novel circuit architecture that operates in homodyne FMCW radar mode will be highlighted [1], and the trade-offs between performance and circuit complexity will be discussed. The transceiver units are based on monolithically integrated Schottky diodes fabricated on 3 μm thick membranes. Radar images with 60 dB of signal-to-noise at 220 GHz will be presented as well as design results for a 340 GHz unit.
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| 9. |
- Dahlbäck, Robin, 1985, et al.
(författare)
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A 340 GHz CW non-linear imaging system
- 2010
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Ingår i: Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010. - 9781424466559
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Konferensbidrag (refereegranskat)abstract
- A CW sub-millimetre wave imaging system is presented. The system operates around 340GHz with a 6.5% relative bandwidth and uses a non-linear imaging algorithm.
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| 10. |
- Drakinskiy, Vladimir, 1977, et al.
(författare)
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Development of planar schottky diodes
- 2011
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Ingår i: 22nd International Symposium on Space Terahertz Technology 2011, ISSTT 2011; Tucson, AZ; United States; 25 April 2011 through 28 April 2011. ; , s. 64-
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Konferensbidrag (refereegranskat)abstract
- We present the development of an air-bridged planar Schottky diode process at Chalmers University of Technology for use in submillimeter wave mixer and multiplier circuits. As a first step evaluation has been targeted for heterodyne receivers (atmosphere sounders) operation at 340 GHz. The aim is to develop a reliable and repeatable discrete Schottky diode process, with good electrical and mechanical characteristics, which also can be scaled to smaller anodes and extended to integrated diode circuits for THz frequencies. Air-bridged Schottky structures were demonstrated in the late 1980's as a reliable, high quality alternative to whisker contacted diodes. This approach gives a mechanically stable structure and still low parasitic capacitances. The Chalmers diode process is based on electron beam lithography, with a beam spot less than 5 nm, which allows for precise anode and airdridge formation. Hence, this process module can also be utilized for submicron size anodes and. terahertz monolithic integrated circuits (TMICs). Several batches with different shapes of anodes have been fabricated and evaluated with respect to DC/RF-performance. Repeatability of the diode's characteristics indicates good control of the diode fabrication process. We will present the main fabrication route, optimization and repeatability of the diodes as well as RF results from mixer and multiplier measurements up to 340 GHz.
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