| 1. |
- Ghandi, Reza, et al.
(författare)
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Experimental evaluation of different passivation layers on the performance of 3kV 4H-SiC BJTs
- 2010
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Ingår i: Materials Science Forum. - 0255-5476 .- 1662-9752. ; 645-648:Part 1-2, s. 661-664
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Tidskriftsartikel (refereegranskat)abstract
- In this work, the electrical performance in terms of maximum current gain, ON-resistance and blocking capability has been compared for 4H-SiC BJTs passivated with different surface passivation layers. Variation in BJT performance has been correlated to densities of interface traps and fixed oxide charge, as evaluated through MOS capacitors. Six different methods were used to fabricate SiO2 surface passivation on BJT samples from the same wafer. The highest current gain was obtained for PECVD deposited SiO2 which was annealed in N2O ambient at 1100 degrees C during 3 hours. Variations in breakdown voltage for different surface passivations were also found, and this is attributed to differences in fixed oxide charge that can affect the optimum dose of the high voltage JTE termination.
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| 2. |
- Ghandi, Reza, et al.
(författare)
-
Surface-passivation effects on the performance of 4H-SiC BJTs
- 2011
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Ingår i: IEEE Transactions on Electron Devices. - 0018-9383 .- 1557-9646. ; 58, s. 259-265
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Tidskriftsartikel (refereegranskat)abstract
- In this brief, the electrical performance in terms of maximum current gain and breakdown voltage is compared experimentally and by device simulation for 4H-SiC BJTs passivated with different surface-passivation layers. Variation in bipolar junction transistor (BJT) performance has been correlated to densities of interface traps and fixed oxide charge, as evaluated through MOS capacitors. Six different methods were used to fabricate SiO2 surface passivation on BJT samples from the same wafer. The highest current gain was obtained for plasma-deposited SiO2 which was annealed in N2O ambient at 1100 °C for 3 h. Variations in breakdown voltage for different surface passivations were also found, and this was attributed to differences in fixed oxide charge that can affect the optimum dose of the high-voltage junction-termination extension (JTE). The dependence of breakdown voltage on the dose was also evaluated through nonimplanted BJTs with etched JTE.
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| 3. |
- Östling, Mikael, et al.
(författare)
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SiC bipolar power transistors : Design and technology issues for ultimate performance
- 2010
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Ingår i: 2010 MRS Spring Meeting. - 9781605112237 ; , s. 175-186
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Konferensbidrag (refereegranskat)abstract
- Silicon carbide (SiC) semiconductor devices for high power are becoming more mature and are now commercially available as discrete devices. Schottky diodes have been on the market since a few years but also bipolar junction transistors (BJTs), JFETs and MOSFETs are now reaching the market. The interest is rapidly growing for these devices in high power and high temperature applications. The BJTs have low conduction losses, fast switching capability, operate in normally-off mode, have high radiation hardness, and can handle high power density.This paper will review the current state of the art in active switching device performance with special emphasis on BJTs. Device performance has been demonstrated over a wide temperature interval. A very important feature in high power switch applications is the low on-resistance of a device. Better material quality and epi processes suppress the amount of basal plane dislocations to avoid stacking fault formation generated during high current injection. This has long been a concern for bipolar SiC devices but several research reports and long term reliability measurements of pn-junctions show that the bipolar degradation problem can be solved by a fine-tuned epitaxial technique. A discussion on surface passivation control is included. Finally, an example of a power switching module is given also demonstrating the excellent paralleling capability of BJTs.
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