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- Wang, Teng, 1983, et al.
(författare)
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Through silicon vias filled with planarized carbon nanotube bundles
- 2009
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 20:48
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Tidskriftsartikel (refereegranskat)abstract
- The feasibility of using carbon nanotube (CNT) bundles as the fillers of through silicon vias (TSVs) has been demonstrated. CNT bundles are synthesized directly inside TSVs by thermal chemical vapor deposition (TCVD). The growth of CNTs in vias is found to be highly dependent on the geometric dimensions and arrangement patterns of the vias at atmospheric pressure. The CNT-Si structure is planarized by a combined lapping and polishing process to achieve both a high removal rate and a fine surface finish. Electrical tests of the CNT TSVs have been performed and their electrical resistance was found to be in the few hundred ohms range. The reasons for the high electrical resistance have been discussed and possible methods to decrease the electrical resistance have been proposed.
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| 5. |
- Liu, Johan, 1960, et al.
(författare)
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Thermal management technologies for electronics based on multiwalled carbon nanotube bundles: As power consumption increases, so does the need for more efficient heat removal technologies
- 2009
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Ingår i: IEEE Nanotechnology Magazine. - 1932-4510. ; 3:1, s. 17-19
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Tidskriftsartikel (refereegranskat)abstract
- As electronic circuits grow denser and their power consumption per unit area is increasing, new, more efficient technologies for heat removal are necessary. Heat fluxes from the IC on the order of 100 W/cm 2 (1 million W/m 2) are not rare. A heat transfer coefficient (including a possible area enlarging factor) of 20,000 W/m 2K is needed to accommodate a heat flux of 100 W/ cm 2 at a temperature difference of 50 K. The application of nanotechnologies is considered as a revolutionary approach to meet the tougher requirements for thermal management of electronics. There are two possible approaches to improve the cooling of microelectronics packages. The first is to improve the thermal conductivity of the packaging material and package geometry so that the thermal gradient within it becomes smaller. The second is to improve the heat removal, i.e., increase the effect of the convective heat transfer, from the surface or from the inside of the package.
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| 6. |
- Popok, Vladimir, 1966, et al.
(författare)
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Stopping of energetic cobalt clusters and formation of radiation damage in graphite
- 2009
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Ingår i: Physical Review B. ; 80:20
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Tidskriftsartikel (refereegranskat)abstract
- The interaction of energetic (up to 200 eV/atom) size-selected Con clusters with HOPG is studied both experimentally and theoretically. Etching of the radiation damage areas introduced by cluster impacts provides a measure of the depth to which the collision cascades are developed and allowes a comparison of these data with the molecular dynamics simulations. Good agreement between the experimental results and modelling is obtained. It is shown that the projected range of the cluster constituents can be linearly scaled with the projected momentum (the cluster momentum divided by surface impact area). With decrease of cluster energies to ca. 10 eV/atom the transition from implantation to pinning is suggested. It is found that even after quite energetic impacts residual clusters remain intact in the shallow graphite layer. These clusters can catalyse reaction of atmospheric oxygen with damaged graphite areas under the thermal heating that leads to the formation of narrow (5-15 nm) random in shape surface channels (trenches) in the top few graphene layers. Thus, small imbedded Co nanoparticles can be used as a processing tool for graphene.
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| 7. |
- Svensson, Johannes, 1978, et al.
(författare)
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Carbon Nanotube Diameter Dependence of the Schottky Barrier Height for Pd – Carbon Nanotube Contacts
- 2009
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 20:17
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Tidskriftsartikel (refereegranskat)abstract
- Direct measurements are presented of the Schottky barrier (SB) heights of carbon nanotube devices contacted with Pd electrodes. The SB barrier heights were determined from the activation energy of the temperature-dependent thermionic emission current in the off-state of the devices. The barrier heights generally decrease with increasing diameter of the nanotubes and they are in agreement with the values expected when assuming little or no influence of Fermi level pinning.
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