SwePub - sökning: WFRF:(Cherkaoui Karim)

Numrering	Referens	Omslagsbild	Hitta
1.	Buiu, Octavian, et al. (författare) Extracting the relative dielectric constant for “high-k layers”from CV measurements – errors and error propagation 2007 Ingår i: Microelectronics Reliability. ; 47, s. 678- Tidskriftsartikel (refereegranskat)
2.	Engström, Olof, 1943, et al. (författare) Navigation aids in the search for future high-k dielectrics: Physical and electrical trends 2007 Ingår i: Solid State Electronics. ; 51, s. 622- Tidskriftsartikel (refereegranskat)
3.	Engström, Olof, 1943, et al. (författare) Navigation aids in the search for future high-k dielectrics: physical and electrical trends 2006 Ingår i: Proceeding of 7th European Workshop on Ultimate Integration of Silicon (ULIS 2006), p.115-118, April 20-21, Grenoble, France (2006).. ; , s. 115-118 Tidskriftsartikel (refereegranskat)abstract From experimental literature data on metal oxides combinedwith theoretical estimates, we present empirical relations for k-values and energy band offset values, that can be used in the search for gate dielectric materials fulfilling the needs of future CMOS generations. Only a few materials investigated so far have properties meeting the demands for k and energy band offset values in the development of CMOS down to 22 nm.

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