| 1. |
- Cho, H., et al.
(författare)
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High density plasma via hole etching in SiC
- 2001
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 19:4, s. 1878-1881
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Tidskriftsartikel (refereegranskat)abstract
- Throughwafer vias up to 100 mum deep were formed in 4H-SiC substrates by inductively coupled plasma etching with SF6/O-2 at a controlled rate of similar to0.6 mum min(-1) and use of Al masks. Selectivities of > 50 for SiC over Al were achieved. Electrical (capacitance-voltage: current-voltage) and chemical (Auger electron spectroscopy) analysis techniques showed that the etching produced only minor changes in reverse breakdown voltage, Schottky barrier height, and near surface stoichiometry of the SiC and had high selectivity over common frontside metallization. The SiC etch rate was a strong function of the incident ion energy during plasma exposure. This process is attractive for power SiC transistors intended for high current, high temperature applications and also for SiC micromachining.
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| 2. |
- Cho, H., et al.
(författare)
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Ultradeep, low-damage dry etching of SiC
- 2000
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 76:6, s. 739-741
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Tidskriftsartikel (refereegranskat)abstract
- The Schottky barrier height (Phi(B)) and reverse breakdown voltage (V-B) of Au/n-SiC diodes were used to examine the effect of inductively coupled plasma SF6/O-2 discharges on the near-surface electrical properties of SiC. For low ion energies (less than or equal to 60 eV) in the discharge, there is minimal change in Phi(B) and V-B, but both parameters degrade at higher energies. Highly anisotropic features typical of through-wafer via holes were formed in SiC using an Al mask.
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| 3. |
- Huang, X., et al.
(författare)
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Full dimensional quantum calculations of vibrational energies of H5O2
- 2003
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Ingår i: Journal of Physical Chemistry A. - : American Chemical Society (ACS). - 1089-5639 .- 1520-5215. ; 107:37, s. 7142-7151
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Tidskriftsartikel (refereegranskat)abstract
- The full dimensional (15 degrees-of-freedom) quantum calculations of vibrational energies of H5O2+ are reported using the global potential energy surface (OSS) of Ojamäe et al. (J. Chem. Phys. 1998, 109, 5547). One set of calculations uses the diffusion Monte Carlo (DMC) method with a highly flexible initial trial wave function. This method is limited to the ground vibrational state, but produces what we believe is a highly accurate, benchmark energy and wave function for that state. The DMC wave function is analyzed to identify coordinates that are strongly correlated in zero-point fluctuations. A simple harmonic model is developed to elucidate the energetic consequences of these correlations. The other set of calculations is based on the code MULTIMODE, which does configuration interaction (CI) calculations using a basis determined from a vibrational self-consistent field (VSCF) Hamiltonian, but which uses a representation of the potential with mode coupling limited to a maximum of four modes. Good agreement is obtained between the DMC and the CI MULTIMODE energies for the ground vibrational state. When less sophisticated theoretical treatments are applied, either variational Monte Carlo or vibrational self-consistent field, fairly large errors are found. Vibrationally excited-state energies obtained with MULTIMODE are also reported.
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| 4. |
- Cho, C. R., et al.
(författare)
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Na0.5K0.5NbO3 thin films for MFIS_FET type non-volatile memory applications
- 2002
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Ingår i: Integrated Ferroelectrics. - 1058-4587 .- 1607-8489. ; 49, s. 21-30
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Tidskriftsartikel (refereegranskat)abstract
- Na0.5K0.5NbO3(NKN) thin films have been prepared on Pt80Ir20, SiO2/Si, and Ta2O5/Si substrates for ferroelectric non-volatile memory applications. Ferroelectric hysteresis loops for Au/NKN/Pt80Ir20 vertical capacitor yielded remnant polarization of 12 muC/cm(2) and coercive field similar to20 kV/cm. Significant flat-band voltage V-FB shifts with buffer layer thickness in Au/NKN/SiO2/Si structures have been attributed to the intermixing between Na and K alkali ions and SiO2 layer. On the other hand, Au/NKN/Ta2O5/Si structure exhibited wide memory window without significant V-FB deviations, low leakage currents, and rather long retention time at zero bias.
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| 5. |
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| 6. |
- Leerungnawarat, P., et al.
(författare)
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Effect of UV light irradiation on SiC dry etch rates
- 2000
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Ingår i: Journal of Electronic Materials. - : Springer Science and Business Media LLC. - 0361-5235 .- 1543-186X. ; 29:3, s. 342-346
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Tidskriftsartikel (refereegranskat)abstract
- Inductively Coupled Plasma etching of 4H-SiC under ultraviolet illumination was examined for SF6/Ar and Cl-2/Ar chemistries. Etch rate enhancements up to a factor of 8 were observed with UV light irradiation during Cl-2/Ar etching. The enhancement mechanism is related to photodesorption of SiClx and CClx species. Surface morphologies were unchanged as a result of the UV enhancement with Cl-2/Ar discharges. By contrast, there was no effect of UV irradiation on the SiC etch rates in SF6/Ar plasmas, but the surfaces were typically smoother than those obtained without the ultraviolet illumination. In the SF6/Ar chemistry the rate-limiting steps are either Si-C bond-breaking or supply of fluorine radicals to the surface, and not desorption of the SiFx and CFx etch products.
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| 7. |
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