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Sökning: WFRF:(Cho Young Seok) > (2017)

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1.
  • Flannick, Jason, et al. (författare)
  • Data Descriptor : Sequence data and association statistics from 12,940 type 2 diabetes cases and controls
  • 2017
  • Ingår i: Scientific Data. - : Springer Science and Business Media LLC. - 2052-4463. ; 4
  • Tidskriftsartikel (refereegranskat)abstract
    • To investigate the genetic basis of type 2 diabetes (T2D) to high resolution, the GoT2D and T2D-GENES consortia catalogued variation from whole-genome sequencing of 2,657 European individuals and exome sequencing of 12,940 individuals of multiple ancestries. Over 27M SNPs, indels, and structural variants were identified, including 99% of low-frequency (minor allele frequency [MAF] 0.1-5%) non-coding variants in the whole-genome sequenced individuals and 99.7% of low-frequency coding variants in the whole-exome sequenced individuals. Each variant was tested for association with T2D in the sequenced individuals, and, to increase power, most were tested in larger numbers of individuals (> 80% of low-frequency coding variants in similar to ~82 K Europeans via the exome chip, and similar to ~90% of low-frequency non-coding variants in similar to ~44 K Europeans via genotype imputation). The variants, genotypes, and association statistics from these analyses provide the largest reference to date of human genetic information relevant to T2D, for use in activities such as T2D-focused genotype imputation, functional characterization of variants or genes, and other novel analyses to detect associations between sequence variation and T2D.
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2.
  • Lim, Seung-Hyuk, et al. (författare)
  • Formation of a-plane facets in three-dimensional hexagonal GaN structures for photonic devices
  • 2017
  • Ingår i: Scientific Reports. - : NATURE PUBLISHING GROUP. - 2045-2322. ; 7
  • Tidskriftsartikel (refereegranskat)abstract
    • Control of the growth front in three-dimensional (3D) hexagonal GaN core structures is crucial for increased performance of light-emitting diodes (LEDs), and other photonic devices. This is due to the fact that InGaN layers formed on different growth facets in 3D structures exhibit various band gaps which originate from differences in the indium-incorporation efficiency, internal polarization, and growth rate. Here, a-plane {11 (2) over bar0} facets, which are rarely formed in hexagonal pyramid based growth, are intentionally fabricated using mask patterns and adjustment of the core growth conditions. Moreover, the growth area covered by these facets is modified by changing the growth time. The origin of the formation of a-plane {11 (2) over bar0} facets is also discussed. Furthermore, due to a growth condition transition from a 3D core structure to an InGaN multi-quantum well, a growth front transformation (i.e., a transformation of a-plane {11 (2) over bar0} facets to semi-polar {11 (2) over bar2} facets) is directly observed. Based on our understanding and control of this novel growth mechanism, we can achieve efficient broadband LEDs or photovoltaic cells.
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