| 1. |
- Cho, H., et al.
(författare)
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High density plasma via hole etching in SiC
- 2001
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 19:4, s. 1878-1881
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Tidskriftsartikel (refereegranskat)abstract
- Throughwafer vias up to 100 mum deep were formed in 4H-SiC substrates by inductively coupled plasma etching with SF6/O-2 at a controlled rate of similar to0.6 mum min(-1) and use of Al masks. Selectivities of > 50 for SiC over Al were achieved. Electrical (capacitance-voltage: current-voltage) and chemical (Auger electron spectroscopy) analysis techniques showed that the etching produced only minor changes in reverse breakdown voltage, Schottky barrier height, and near surface stoichiometry of the SiC and had high selectivity over common frontside metallization. The SiC etch rate was a strong function of the incident ion energy during plasma exposure. This process is attractive for power SiC transistors intended for high current, high temperature applications and also for SiC micromachining.
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| 2. |
- Cho, H., et al.
(författare)
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Ultradeep, low-damage dry etching of SiC
- 2000
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 76:6, s. 739-741
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Tidskriftsartikel (refereegranskat)abstract
- The Schottky barrier height (Phi(B)) and reverse breakdown voltage (V-B) of Au/n-SiC diodes were used to examine the effect of inductively coupled plasma SF6/O-2 discharges on the near-surface electrical properties of SiC. For low ion energies (less than or equal to 60 eV) in the discharge, there is minimal change in Phi(B) and V-B, but both parameters degrade at higher energies. Highly anisotropic features typical of through-wafer via holes were formed in SiC using an Al mask.
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| 3. |
- Lee, K. P., et al.
(författare)
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Comparison of F2 plasma chemistries for deep etching of SiC
- 2001
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Ingår i: Materials Research Society Symposium - Proceedings. - Boston, MA. ; , s. H7.7.1-H7.7.6
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Konferensbidrag (refereegranskat)abstract
- A number of F2-based plasma chemistries (NF3, SF6, PF5 and BF3) were investigated for high rate etching of SiC. The most advantageous of these is SF6, based on the high rate (0.6 Όm·min-) it achieves and its relatively low cost compared to NF3. The changes in electrical properties of the near-surface region are relatively minor when the incident ion energy is kept below approximately 75 eV. At a process pressure of 5 m Torr, the SiC etch rate falls-off by ∌15% in 30 Όm diameter via holes compared to larger diameter holes (> 60 Όm diameter) or open areas on the mask.
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