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Träfflista för sökning "WFRF:(Colvin B) srt2:(2020-2022)"

Sökning: WFRF:(Colvin B) > (2020-2022)

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1.
  • 2021
  • swepub:Mat__t
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2.
  • Bravo, L, et al. (författare)
  • 2021
  • swepub:Mat__t
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3.
  • Tabiri, S, et al. (författare)
  • 2021
  • swepub:Mat__t
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5.
  • Khatri, C, et al. (författare)
  • Outcomes after perioperative SARS-CoV-2 infection in patients with proximal femoral fractures: an international cohort study
  • 2021
  • Ingår i: BMJ open. - : BMJ. - 2044-6055. ; 11:11, s. e050830-
  • Tidskriftsartikel (refereegranskat)abstract
    • Studies have demonstrated high rates of mortality in people with proximal femoral fracture and SARS-CoV-2, but there is limited published data on the factors that influence mortality for clinicians to make informed treatment decisions. This study aims to report the 30-day mortality associated with perioperative infection of patients undergoing surgery for proximal femoral fractures and to examine the factors that influence mortality in a multivariate analysis.SettingProspective, international, multicentre, observational cohort study.ParticipantsPatients undergoing any operation for a proximal femoral fracture from 1 February to 30 April 2020 and with perioperative SARS-CoV-2 infection (either 7 days prior or 30-day postoperative).Primary outcome30-day mortality. Multivariate modelling was performed to identify factors associated with 30-day mortality.ResultsThis study reports included 1063 patients from 174 hospitals in 19 countries. Overall 30-day mortality was 29.4% (313/1063). In an adjusted model, 30-day mortality was associated with male gender (OR 2.29, 95% CI 1.68 to 3.13, p<0.001), age >80 years (OR 1.60, 95% CI 1.1 to 2.31, p=0.013), preoperative diagnosis of dementia (OR 1.57, 95% CI 1.15 to 2.16, p=0.005), kidney disease (OR 1.73, 95% CI 1.18 to 2.55, p=0.005) and congestive heart failure (OR 1.62, 95% CI 1.06 to 2.48, p=0.025). Mortality at 30 days was lower in patients with a preoperative diagnosis of SARS-CoV-2 (OR 0.6, 95% CI 0.6 (0.42 to 0.85), p=0.004). There was no difference in mortality in patients with an increase to delay in surgery (p=0.220) or type of anaesthetic given (p=0.787).ConclusionsPatients undergoing surgery for a proximal femoral fracture with a perioperative infection of SARS-CoV-2 have a high rate of mortality. This study would support the need for providing these patients with individualised medical and anaesthetic care, including medical optimisation before theatre. Careful preoperative counselling is needed for those with a proximal femoral fracture and SARS-CoV-2, especially those in the highest risk groups.Trial registration numberNCT04323644
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6.
  • Colvin, Jovana, et al. (författare)
  • Local defect-enhanced anodic oxidation of reformed GaN nanowires
  • 2020
  • Ingår i: Physical Review Materials. - 2475-9953. ; 4:7
  • Tidskriftsartikel (refereegranskat)abstract
    • Understanding formation and distribution of defects in GaN substrates and device layers is needed to improve device performance in rf and power electronics. Here we utilize conductive atomic force microscopy (c-AFM) for studying defect-related leakage paths in an unintentionally doped GaN film formed by nanowire reformation. A nanoscopic Schottky contact is formed between the c-AFM probe and the GaN surface, which, under reverse-bias conditions, reveals local leakage currents at the positions of the nanowires. Cathodoluminescence shows these areas to be dominated by yellow-band luminescence, in contrast to the surrounding GaN matrix, which mainly shows near-band-gap luminescence. These results are attributed to a high density of native and residual defects, confined to the nanowires. In addition, we use anodic oxidation to map defect-related conductive paths through locally induced growth of gallium oxide. The oxide yield, which is known to depend on the local electric field strength between the AFM tip and the sample, correlates well with the level of reverse-bias leakage current. Local irregularities in oxide height reveal extended oxidation attributed to defect-related deep-level states. Thisis confirmed by controlled dissolution of the oxide in NaOH, showing that a deeper oxide film is grown over areas where defect-related conductive paths are formed. Finally, we demonstrate how this approach can be used as a quick and easy diagnostic tool for evaluating the influence of specific growth conditions and process steps on defect-induced leakage current levels and defect distribution in GaN structures, demonstrating its potential for accelerated test of leakage degradation at critical positions in GaN-based devices.
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7.
  • Jakobsen, Lasse H., et al. (författare)
  • Minimal relapse risk and early normalization of survival for patients with Burkitt lymphoma treated with intensive immunochemotherapy : an international study of 264 real-world patients
  • 2020
  • Ingår i: British Journal of Haematology. - : Wiley. - 0007-1048 .- 1365-2141. ; 189:4, s. 661-671
  • Tidskriftsartikel (refereegranskat)abstract
    • Non-endemic Burkitt lymphoma (BL) is a rare germinal centre B-cell-derived malignancy with the genetic hallmark of MYC gene translocation and with rapid tumour growth as a distinct clinical feature. To investigate treatment outcomes, loss of lifetime and relapse risk in adult BL patients treated with intensive immunochemotherapy, retrospective clinic-based and population-based lymphoma registries from six countries were used to identify 264 real-world patients. The median age was 47 years and the majority had advanced-stage disease and elevated LDH. Treatment protocols were R-CODOX-M/IVAC (47%), R-hyper-CVAD (16%), DA-EPOCH-R (11%), R-BFM/GMALL (25%) and other (2%) leading to an overall response rate of 89%. The two-year overall survival and event-free survival were 84% and 80% respectively. For patients in complete remission/unconfirmed, the two-year relapse risk was 6% but diminished to 0·6% for patients reaching 12 months of post-remission event-free survival (pEFS12). The loss of lifetime for pEFS12 patients was 0·4 (95% CI: −0·7 to 2) months. In conclusion, real-world outcomes of adult BL are excellent following intensive immunochemotherapy. For pEFS12 patients, the relapse risk was low and life expectancy similar to that of a general population, which is important information for developing meaningful follow-up strategies with increased focus on survivorship and less focus on routine disease surveillance.
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8.
  • Khalilian, Maryam, et al. (författare)
  • Coherently strained and dislocation-free architectured AlGaN/GaN submicron-sized structures
  • 2021
  • Ingår i: Nano Select. - : Wiley. - 2688-4011. ; n/a:n/a, s. 1-14
  • Tidskriftsartikel (refereegranskat)abstract
    • To improve the performance and efficiency of Al containing III-Nitride-based devices, a number of issues must be addressed, especially the presence and generation of dislocations and other structural defects. The main sources of the dislocations are growth on non-native substrates and heteroepitaxial growth of lattice-mismatched layers. We demonstrate the ability to completely avoid structural defects including dislocations in AlxGa1-xN layers with x up to 0.90 and thicknesses over 100 nm, grown directly on submicron-sized, flat-topped GaN platelets. These structures have an excellent homogeneity over an entire array. The GaN platelets were produced by epitaxial growth and reformation of GaN nanowires, effectively blocking the propagation of threading dislocations (TDs) from the underlying substrate. The platelets have a sufficiently small volume to elastically accommodate the strain built up in the architectured AlGaN/GaN heterostructures. Effectively, we have designed a sacrificial nano-scaled GaN seed, with the ability to be strained by the AlGaN layer grown on top of it. The conditions for the growth of the AlGaN are chosen to avoid the creation of misfit dislocations and other structural defects. These thick and structural defect-free, submicron-sized AlGaN/GaN structures may open up a new path for highly efficient electronic and optoelectronic devices. These structures can be used as substrates for light-emitting diodes and transistors, either as individual devices or arrays in parallel, depending on the need for light output or transistor current.
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  • Resultat 1-8 av 8

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