| 1. |
- Crupi, G., et al.
(författare)
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Purely analytical extraction of an improved nonlinear FinFET model including non-quasi-static effects
- 2009
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317. ; 86:11, s. 2283-2289
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Tidskriftsartikel (refereegranskat)abstract
- An analytical procedure is proposed for extracting a new nonlinear FinFET model, which accounts for non-quasi static effects. The accuracy and the robustness of the obtained nonlinear model are completely validated through the comparison between simulated and measured device behaviour in both linear and nonlinear cases. This study clearly shows that the inclusion of the non-quasi-static phenomena leads to significant model simulation improvements, which become more pronounced at higher frequency. (C) 2009 Elsevier B.V. All rights reserved.
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| 2. |
- Crupi, G., et al.
(författare)
-
Analysis of quasi-static assumption in nonlinear finFET model
- 2008
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Ingår i: 2008 17th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2008. - 9788390666280
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Konferensbidrag (refereegranskat)abstract
- The construction and validation of a quasi-static nonlinear microwave model for FinFETs are investigated. A very good agreement between model simulations and measurements is obtained under different DC bias points, input power levels, fundamental frequencies up to 5 GHz, and device geometries. Since the intrinsic part of the FET model is based on the quasi-static approximation, the goal of this work is to analyze in detail the limitations of this assumption by examining the intrinsic admittance parameters versus the frequency.
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| 3. |
- Crupi, G., et al.
(författare)
-
Combined empirical and look-up table approach for non-quasi-static modelling of GaN HEMTs
- 2009
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Ingår i: 9th International Conference on Telecommunications in Modern Satellite, Cable, and Broadcasting Services, TELSIKS 2009 - Proceedings of Paper. - 9781424443833 ; , s. 40-43
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Konferensbidrag (refereegranskat)abstract
- In this paper the empirical and the look-up table approaches are combined to accurately model a gallium nitride based HEMT on silicon carbide. That solution allows to exploit the advantages of both approaches. The validity of the extracted model is verified by comparing model simulations with DC and microwave measurements.
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| 4. |
- Crupi, G., et al.
(författare)
-
Non-linear FinFET Modeling: Lookup Table and Empirical Approaches
- 2008
-
Ingår i: International Journal of Microwave and Optical Technology. - 1553-0396. ; 3:3, s. 157-164
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Tidskriftsartikel (refereegranskat)abstract
- The non-linear microwave modeling of advanced transistors is becoming more and more essential to the design and fabrication processes. Consequently, this study is focused on the equivalent circuit based non-linear microwave modeling of FinFET. An accurate multi-bias small signal equivalent circuit is extracted and subsequently used for analytically constructing a non-linear full blown lookup table model. Furthermore, an alternative model implementation, which is based on empirical expressions, is investigated. The validity of both non-linear modeling approaches is confirmed by the good agreement between model simulations and large signal measurements.
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