| 1. |
- Curado, M. A., et al.
(författare)
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Front passivation of Cu(In,Ga)Se-2 solar cells using Al2O3 : Culprits and benefits
- 2020
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Ingår i: APPLIED MATERIALS TODAY. - : ELSEVIER. - 2352-9407. ; 21
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Tidskriftsartikel (refereegranskat)abstract
- In the past years, the strategies used to break the Cu(In,Ga)Se-2 (CIGS) light to power conversion efficiency world record value were based on improvements of the absorber optoelectronic and crystalline properties, mainly using complex post-deposition treatments. To reach even higher efficiency values, further advances in the solar cell architecture are needed, in particular, with respect to the CIGS interfaces. In this study, we evaluate the structural, morphological and optoelectronic impact of an Al2O3 layer as a potential front passivation layer on the CIGS properties, as well as an Al2O3 tunneling layer between CIGS and CdS. Morphological and structural analyses reveal that the use of Al2O3 alone is not detrimental to CIGS, although it does not resist to the CdS chemical bath deposition. The CIGS optoelectronic properties degrade when the CdS is deposited on top of Al2O3. Nonetheless, when Al2O3 is used alone, the optoelectronic measurements reveal a positive impact of this inclusion such as a very low concentration of interface defects while keeping the same CIGS recombination channels. Thus, we suggest that an Al2O3 front passivation layer can be successfully used with alternative buffer layers. Depth-resolved microscopic analysis of the CIGS interface with slow-muons strongly suggests for the first time that low-energy muon spin spectroscopy (LE-mu SR) is sensitive to both charge carrier separation and bulk recombination in complex semiconductors. The demonstration that Al2O3 has the potential to be used as a front passivation layer is of significant importance, considering that Al2O3 has been widely studied as rear interface passivation material. (C) 2020 Published by Elsevier Ltd.
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| 2. |
- Alberto, H. V., et al.
(författare)
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Low energy muon study of the p-n interface in chalcopyrite solar cells
- 2023
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Ingår i: Journal of Physics, Conference Series. - : Institute of Physics Publishing (IOPP). - 1742-6588 .- 1742-6596. ; 2462
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Tidskriftsartikel (refereegranskat)abstract
- The slow muon technique was used to study the p-n junction of chalcopyrite solar cells. A defect layer near the interface was identified and the passivation of the defects by buffer layers was studied. Several cover layers on top of the chalcopyrite Cu(In,Ga)Se2 (CIGS) semiconductor absorber were investigated in this work, namely CdS, ZnSnO, Al2O3 and SiO2. Quantitative results were obtained: The defect layer extends about 50 nm into the CIGS absorber, the relevant disturbance is strain in the lattice, and CdS provides the best passivation, oxides have a minor effect. In the present contribution, specific aspects of the low-energy muon technique in connection with this research are discussed.
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| 3. |
- Lopes, T. S., et al.
(författare)
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Cu(In,Ga)Se2 based ultrathin solar cells the pathway from lab rigid to large scale flexible technology
- 2023
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Ingår i: npj Flexible Electronics. - : Springer Nature. - 2397-4621. ; 7:1
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Tidskriftsartikel (refereegranskat)abstract
- The incorporation of interface passivation structures in ultrathin Cu(In,Ga)Se2 based solar cells is shown. The fabrication used an industry scalable lithography technique—nanoimprint lithography (NIL)—for a 15 × 15 cm2 dielectric layer patterning. Devices with a NIL nanopatterned dielectric layer are benchmarked against electron-beam lithography (EBL) patterning, using rigid substrates. The NIL patterned device shows similar performance to the EBL patterned device.The impact of the lithographic processes in the rigid solar cells’ performance were evaluated via X-ray Photoelectron Spectroscopy and through a Solar Cell Capacitance Simulator. The device on stainless-steel showed a slightly lower performance than the rigid approach, due to additional challenges of processing steel substrates, even though scanning transmission electron microscopy did not show clear evidence of impurity diffusion. Notwithstanding, time-resolved photoluminescence results strongly suggested elemental diffusion from the flexible substrate. Nevertheless, bending tests on the stainless-steel device demonstrated the mechanical stability of the CIGS-based device.
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| 4. |
- Alberto, Helena, V, et al.
(författare)
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Characterization of the Interfacial Defect Layer in Chalcopyrite Solar Cells by Depth-Resolved Muon Spin Spectroscopy
- 2022
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Ingår i: Advanced Materials Interfaces. - : John Wiley & Sons. - 2196-7350. ; 9:19
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Tidskriftsartikel (refereegranskat)abstract
- As devices become smaller and more complex, the interfaces between adjacent materials become increasingly important and are often critical to device performance. An important research goal is to improve the interface between the absorber and the window layer by inserting buffer layers to adjust the transition. Depth-resolved studies are key for a fundamental understanding of the interface. In the present experiment, the interface between the chalcopyrite Cu(In,Ga)Se-2 absorber and various buffer layers are investigated using low-energy muon spin rotation (mu SR) spectroscopy. Depth resolution in the nm range is achieved by implanting the muons with different energies so that they stop at different depths in the sample. Near the interface, a region about 50 nm wide is detected where the lattice is more distorted than further inside the absorber. The distortion is attributed to the long-range strain field caused by defects. These measurements allow a quantification of the corresponding passivation effect of the buffer layer. Bath-deposited cadmium sulfide provides the best defect passivation in the near interface region, in contrast to the dry-deposited oxides, which have a much smaller effect. The experiment demonstrates the great potential of low energy mu SR spectroscopy for microscopic interfacial studies of multilayer systems.
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| 5. |
- Collatuzzo, G, et al.
(författare)
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Peptic ulcer as mediator of the association between risk of gastric cancer and socioeconomic status, tobacco smoking, alcohol drinking and salt intake
- 2022
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Ingår i: Journal of epidemiology and community health. - : BMJ. - 1470-2738 .- 0143-005X. ; 76:10, s. 861-866
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Tidskriftsartikel (refereegranskat)abstract
- Peptic ulcer disease (PUD) and gastric cancer (GC) are more prevalent in individuals with low socioeconomic status (SES) and share several risk factors. The aim of this study was to investigate the mediating role of PUD in the association between established risk factors and GC.MethodsWe conducted a pooled analysis of 12 studies from the Stomach Cancer Pooling Project Consortium, including a total of 4877 GC cases and 11 808 controls. We explored the mediating role of PUD in the association between SES, tobacco smoking, heavy alcohol drinking and salt intake, and GC. Also, we assessed the ORs and 95% CIs of the risk factors and both PUD and GC.ResultsPUD mediated 36% of the smoking effect mainly among men. Other risk factors were only slightly mediated by PUD (SES, 5.3%; heavy alcohol drinking, 3.3%; and salt intake, 2.5%). No significant difference was found when excluding PUD diagnosed within 2 years from GC.ConclusionsOur study provides innovative information on the mechanism of stomach mucosal damage leading to PUD and GC, with respect to the effect of tobacco smoking in particular.
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| 6. |
- Cunha, Jose M. V., et al.
(författare)
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High-Performance and Industrially Viable Nanostructured SiOx Layers for Interface Passivation in Thin Film Solar Cells
- 2021
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Ingår i: Solar RRL. - : John Wiley & Sons. - 2367-198X. ; 5:3
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Tidskriftsartikel (refereegranskat)abstract
- Herein, it is demonstrated, by using industrial techniques, that a passivation layer with nanocontacts based on silicon oxide (SiOx) leads to significant improvements in the optoelectronical performance of ultrathin Cu(In,Ga)Se-2 (CIGS) solar cells. Two approaches are applied for contact patterning of the passivation layer: point contacts and line contacts. For two CIGS growth conditions, 550 and 500 degrees C, the SiOx passivation layer demonstrates positive passivation properties, which are supported by electrical simulations. Such positive effects lead to an increase in the light to power conversion efficiency value of 2.6% (absolute value) for passivated devices compared with a nonpassivated reference device. Strikingly, both passivation architectures present similar efficiency values. However, there is a trade-off between passivation effect and charge extraction, as demonstrated by the trade-off between open-circuit voltage (V-oc) and short-circuit current density (J(sc)) compared with fill factor (FF). For the first time, a fully industrial upscalable process combining SiOx as rear passivation layer deposited by chemical vapor deposition, with photolithography for line contacts, yields promising results toward high-performance and low-cost ultrathin CIGS solar cells with champion devices reaching efficiency values of 12%, demonstrating the potential of SiOx as a passivation material for energy conversion devices.
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| 7. |
- Monteiro, Margarida, et al.
(författare)
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X-ray Photoelectron Spectroscopy for Studying Passivation Architectures of Cu(In,Ga)Se-2 Cells
- 2021
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Ingår i: 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC). - : Institute of Electrical and Electronics Engineers (IEEE). - 9781665419222 ; , s. 890-892
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Konferensbidrag (refereegranskat)abstract
- Optoelectronic devices are susceptible to interface recombination, which can have a detrimental impact on their performance. Therefore, there is an urgent need for tailored passivation strategies to reach a technological boost. In this contribution, two architectures based on passivated Cu(In, Ga)Se-2 solar cells are analyzed with X-ray photoelectron spectroscopy (XPS): one based on rear passivation with gold nanoparticle aggregates, and the other with Al2O3 as a front passivation layer. It is demonstrated that XPS can assist in the understanding of passivated devices from a chemical point of view, comprehend their limitations and push forward the development of future devices.
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