| 1. |
- Armakavicius, Nerijus, et al.
(författare)
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Electron effective mass in GaN revisited: New insights from terahertz and mid-infrared optical Hall effect
- 2024
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Ingår i: APL Materials. - : AIP Publishing. - 2166-532X. ; 12:2
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Tidskriftsartikel (refereegranskat)abstract
- Electron effective mass is a fundamental material parameter defining the free charge carrier transport properties, but it is very challenging to be experimentally determined at high temperatures relevant to device operation. In this work, we obtain the electron effective mass parameters in a Si-doped GaN bulk substrate and epitaxial layers from terahertz (THz) and mid-infrared (MIR) optical Hall effect (OHE) measurements in the temperature range of 38-340 K. The OHE data are analyzed using the well-accepted Drude model to account for the free charge carrier contributions. A strong temperature dependence of the electron effective mass parameter in both bulk and epitaxial GaN with values ranging from (0.18 +/- 0.02) m(0) to (0.34 +/- 0.01) m(0) at a low temperature (38 K) and room temperature, respectively, is obtained from the THz OHE analysis. The observed effective mass enhancement with temperature is evaluated and discussed in view of conduction band nonparabolicity, polaron effect, strain, and deviations from the classical Drude behavior. On the other hand, the electron effective mass parameter determined by MIR OHE is found to be temperature independent with a value of (0.200 +/- 0.002) m(0). A possible explanation for the different findings from THz OHE and MIR OHE is proposed. (c) 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/)
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| 2. |
- Armakavicius, Nerijus, et al.
(författare)
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Resolving mobility anisotropy in quasi-free-standing epitaxial graphene by terahertz optical Hall effect
- 2021
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Ingår i: Carbon. - : Elsevier BV. - 0008-6223 .- 1873-3891. ; 172, s. 248-259
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Tidskriftsartikel (refereegranskat)abstract
- In this work, we demonstrate the application of terahertz-optical Hall effect (THz-OHE) to determine directionally dependent free charge carrier properties of ambient-doped monolayer and quasi-free-standing-bilayer epitaxial graphene on 4H–SiC(0001). Directionally independent free hole mobility parameters are found for the monolayer graphene. In contrast, anisotropic hole mobility parameters with a lower mobility in direction perpendicular to the SiC surface steps and higher along the steps in quasi-free-standing-bilayer graphene are determined for the first time. A combination of THz-OHE, nanoscale microscopy and optical spectroscopy techniques are used to investigate the origin of the anisotropy. Different defect densities and different number of graphene layers on the step edges and terraces are ruled out as possible causes. Scattering mechanisms related to doping variations at the step edges and terraces as a result of different interaction with the substrate and environment are discussed and also excluded. It is suggested that the step edges introduce intrinsic scattering in quasi-free-standing-bilayer graphene, that is manifested as a result of the higher ratio between mean free path and average terrace width parameters. The suggested scenario allows to reconcile existing differences in the literature regarding the anisotropic electrical transport in epitaxial graphene.
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| 3. |
- Bittrich, Eva, et al.
(författare)
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Morphology of Thin Films of Aromatic Ellagic Acid and Its Hydrogen Bonding Interactions
- 2020
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Ingår i: The Journal of Physical Chemistry C. - : AMER CHEMICAL SOC. - 1932-7447 .- 1932-7455. ; 124:30, s. 16381-16390
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Tidskriftsartikel (refereegranskat)abstract
- Ellagic acid (EA), an antioxidant from fruits or other plants, has recently evoked interest in the field of organic electronics because of its weak electron donor properties. In this work, the preparation of uniaxial pi-stacked EA films by thermal evaporation on different surfaces is reported for the first time. The (102) lattice plane of the pi-electron system was confirmed as the contact plane for one monolayer equivalent on Ag(111) by low-electron energy diffraction. X-ray and atomic force microscopy measurements revealed nanocrystalline grains with an average inplane size of 50 nm and considerably smaller average out-of-plane crystallite sizes (16-25 nm) in films of 16-75 nm thickness. The influence of different substrates was minor compared to the effect of the film thickness. An increase in the in-plane density of grains at larger film thicknesses was deduced from the trend in their uniaxial optical properties. Weak and strong intermolecular H-bonding interactions were identified in the EA crystal lattice, while a surplus of weak H-bonding was observed for the nanocrystallites in thin films, as compared to bulk EA. Finally, EA was coevaporated with the semiconducting thiophene molecule DCV4T-Et-2 to demonstrate principle interactions with a guest molecule by H-bonding analysis. Our results illustrate the feasibility of applying EA films as alignment layers for templating other semiconducting organic films used in organic electronic devices.
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| 4. |
- Castillo, Ragnar Ferrand Drake Del, et al.
(författare)
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Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs
- 2024
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Ingår i: IEEE Transactions on Electron Devices. - : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. - 0018-9383 .- 1557-9646. ; , s. 0-1
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Tidskriftsartikel (refereegranskat)abstract
- The impact of different carbon concentrations in the Al 0.06 Ga 0.94 N graded back-barrier and GaN buffer of high electron mobility transistors (HEMTs) is investigated. Four epi-wafers with different carbon concentrations, ranging from 1 × 10 17 to 5 × 10 17 cm −3 , were grown by metal organic chemical vapor deposition (MOCVD). HEMTs with 100 and 200 nm gate lengths were fabricated and characterized with dc, Pulsed-IV, drain current transient spectroscopy (DCTS), and large-signal measurements at 30 GHz. It is shown that the back-barrier effectively prevents buffer-related electron trapping. The highest C-doping provides the best 2DEG confinement, while lower carbon doping levels are beneficial for a high output power and efficiency. A C-doping of 1 × 10 17 cm −3 offers the highest output power at maximum power added efficiency (PAE) (1.8 W/mm), whereas 3 × 10 17 cm −3 doping provides the highest PAE ( > 40%). The C-profiles acquired by using secondary ion mass spectroscopy (SIMS), in combination with DCTS, is used to explain the electron trapping effects. Traps associated with the C-doping in the back-barrier are identified and the bias ranges for the trap activation are discussed. The study shows the importance of considering the C-doping level in the back-barrier of microwave GaN HEMTs for power amplification and generation.
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| 5. |
- Chen, Ding-Yuan, 1991, et al.
(författare)
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Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization
- 2023
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Ingår i: Semiconductor Science and Technology. - : IOP Publishing Ltd. - 1361-6641 .- 0268-1242. ; 38:10
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Tidskriftsartikel (refereegranskat)abstract
- This study presents a novel approach to forming low-resistance ohmic contacts for AlGaN/GaN HEMTs. The optimized contacts exhibit an outstanding contact resistance of approximately 0.15 & omega;& BULL;mm. This is achieved by firstly recessing the barrier of the heterostructure to a depth beyond the channel. In this way, the channel region is exposed on the sidewall of the recess. The coverage of the Ti/Al/Ti ohmic metalization on the sidewall is ensured through tilting of the sample during evaporation. The annealing process is performed at a low temperature of 550 & DEG;C. The approach does not require precise control of the recess etching. Furthermore, the method is directly applicable to most barrier designs in terms of thickness and Al-concentration. The impact of recessed sidewall angle, thickness and ratio of Ti and Al layers, and the annealing procedure are investigated. Structural and chemical analyses of the interface between the ohmic contacts and epi-structure indicate the formation of ohmic contacts by the extraction of nitrogen from the epi-structure. The approach is demonstrated on HEMT-structures with two different barrier designs in terms of Al-concentration and barrier thickness. The study demonstrate large process window in regard to recess depth and duration of the annealing as well as high uniformity of the contact resistance across the samples, rendering the approach highly suitable for industrial production processes.
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| 6. |
- Chen, Shangzhi, et al.
(författare)
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Conductive polymer nanoantennas for dynamic organic plasmonics
- 2020
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Ingår i: Nature Nanotechnology. - London : Nature Publishing Group. - 1748-3387 .- 1748-3395. ; 15
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Tidskriftsartikel (refereegranskat)abstract
- Being able to dynamically shape light at the nanoscale is oneof the ultimate goals in nano-optics1. Resonant light–matterinteraction can be achieved using conventional plasmonicsbased on metal nanostructures, but their tunability is highlylimited due to a fixed permittivity2. Materials with switchablestates and methods for dynamic control of light–matterinteraction at the nanoscale are therefore desired. Here weshow that nanodisks of a conductive polymer can supportlocalized surface plasmon resonances in the near-infraredand function as dynamic nano-optical antennas, with their resonancebehaviour tunable by chemical redox reactions. Theseplasmons originate from the mobile polaronic charge carriersof a poly(3,4-ethylenedioxythiophene:sulfate) (PEDOT:Sulf)polymer network. We demonstrate complete and reversibleswitching of the optical response of the nanoantennasby chemical tuning of their redox state, which modulatesthe material permittivity between plasmonic and dielectricregimes via non-volatile changes in the mobile chargecarrier density. Further research may study different conductivepolymers and nanostructures and explore their usein various applications, such as dynamic meta-optics andreflective displays.
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| 7. |
- Chen, Shangzhi
(författare)
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Optics of Conducting Polymer Thin Films and Nanostructures
- 2021
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Intrinsically conducting polymers forms a category of doped conjugated polymers that can conduct electricity. Since their discovery in the late 1970s, they have been widely applied in many fields, ranging from optoelectronic devices to biosensors. The most common type of conducting polymers is poly(3,4-ethylenedioxythiophene), or PEDOT. PEDOT has been popularly used as electrodes for solar cells or light-emitting diodes, as channels for organic electrochemical transistors, and as p-type legs for organic thermoelectric generators. Although many studies have been dedicated to PEDOT-based materials, there has been a lack of a unified model to describe their optical properties across different spectral ranges. In addition, the interesting optical properties of PEDOT-based materials, benefiting from its semi-metallic character, have only been rarely studied and utilized, and could potentially enable new applications.Plasmonics is a research field focusing on interactions between light and metals, such as the noble metals (gold and silver). It has enabled various opportunities in fundamental photonics as well as practical applications, varying from biosensors to colour displays. This thesis explores highly conducting polymers as alternatives to noble metals and as a new type of active plasmonic materials. Despite high degrees of microstructural disorder, conducting polymers can possess electrical conductivity approaching that of poor metals, with particularly high conductivity for PEDOT deposited via vapour phase polymerization (VPP). In this thesis, we systematically studied the optical and structural properties of VPP PEDOT thin films and their nanostructures for plasmonics and other optical applications. We employed ultra-wide spectral range ellipsometry to characterize thin VPP PEDOT films and proposed an anisotropic Drude-Lorentz model to describe their optical conductivity, covering the ultraviolet, visible, infrared, and terahertz ranges. Based on this model, PEDOT doped with tosylate (PEDOT:Tos) presented negative real permittivity in the near infrared range. While this indicated optical metallic character, the material also showed comparably large imaginary permittivity and associated losses. To better understand the VPP process, we carefully examined films with a collection of microstructural and spectroscopic characterization methods and found a vertical layer stratification in these polymer films. We unveiled the cause as related to unbalanced transport of polymerization precursors. By selection of suitable counterions, e.g., trifluoromethane sulfonate (OTf), and optimization of reaction conditions, we were able to obtain PEDOT films with electrical conductivity exceeding 5000 S/cm. In the near infrared range from 1 to 5 µm, these PEDOT:OTf films provided a well-defined plasmonic regime, characterized by negative real permittivity and lower magnitude imaginary component. Using a colloidal lithography-based approach, we managed to fabricate nanodisks of PEDOT:OTf and showed that they exhibited clear plasmonic absorption features. The experimental results matched theoretical calculations and numerical simulations. Benefiting from their mixed ionic-electronic conducting characters, such organic plasmonic materials possess redox-tunable properties that make them promising as tuneable optical nanoantennas for spatiotemporally dynamic systems. Finally, we presented a low-cost and efficient method to create structural colour surfaces and images based on UV-treated PEDOT films on metallic mirrors. The concept generates beautiful and vivid colours through-out the visible range utilizing a synergistic effect of simultaneously modulating polymer absorption and film thickness. The simplicity of the device structure, facile fabrication process, and tunability make this proof-of-concept device a potential candidate for future low-cost backlight-free displays and labels.
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| 8. |
- Chen, Shangzhi, et al.
(författare)
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Tunable Structural Color Images by UV-Patterned Conducting Polymer Nanofilms on Metal Surfaces.
- 2021
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Ingår i: Advanced Materials. - : Wiley. - 0935-9648 .- 1521-4095. ; 33:33
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Tidskriftsartikel (refereegranskat)abstract
- Precise manipulation of light-matter interactions has enabled a wide variety of approaches to create bright and vivid structural colors. Techniques utilizing photonic crystals, Fabry-Pérot cavities, plasmonics, or high-refractive-index dielectric metasurfaces have been studied for applications ranging from optical coatings to reflective displays. However, complicated fabrication procedures for sub-wavelength nanostructures, limited active areas, and inherent absence of tunability of these approaches impede their further development toward flexible, large-scale, and switchable devices compatible with facile and cost-effective production. Here, a novel method is presented to generate structural color images based on monochromic conducting polymer films prepared on metallic surfaces via vapor phase polymerization and ultraviolet (UV) light patterning. Varying the UV dose enables synergistic control of both nanoscale film thickness and polymer permittivity, which generates controllable structural colors from violet to red. Together with grayscale photomasks this enables facile fabrication of high-resolution structural color images. Dynamic tuning of colored surfaces and images via electrochemical modulation of the polymer redox state is further demonstrated. The simple structure, facile fabrication, wide color gamut, and dynamic color tuning make this concept competitive for applications like multifunctional displays.
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| 9. |
- Del Castillo, Ragnar Ferrand-Drake, et al.
(författare)
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Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs
- 2024
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Ingår i: IEEE Transactions on Electron Devices. - : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. - 0018-9383 .- 1557-9646.
-
Tidskriftsartikel (refereegranskat)abstract
- The impact of different carbon concentrations in the Al 0.06 Ga 0.94 N graded back-barrier and GaN buffer of high electron mobility transistors (HEMTs) is investigated. Four epi-wafers with different carbon concentrations, ranging from 1 x 10(17) to 5 x 10(17) cm( -3) , were grown by metal organic chemical vapor deposition (MOCVD). HEMTs with 100 and 200 nm gate lengths were fabricated and characterized with dc, Pulsed-IV, drain current transient spectroscopy (DCTS), and large-signal measurements at 30 GHz. It is shown that the back-barrier effectively prevents buffer-related electron trapping. The highest C-doping provides the best 2DEG confinement, while lower carbon doping levels are beneficial for a high output power and efficiency. A C-doping of 1 x 10(17)cm( -3) offers the highest output power at maximum power added efficiency (PAE) (1.8 W/mm), whereas 3 x 10(17) cm( -3) doping provides the highest PAE ( > 40%). The C-profiles acquired by using secondary ion mass spectroscopy (SIMS), in combination with DCTS, is used to explain the electron trapping effects. Traps associated with the C-doping in the back-barrier are identified and the bias ranges for the trap activation are discussed. The study shows the importance of considering the C-doping level in the back-barrier of microwave GaN HEMTs for power amplification and generation.
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| 10. |
- Delgado Carrascon, Rosalia, 1987-
(författare)
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Epitaxial strategies for defect reduction in GaN for vertical power devices
- 2022
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Licentiatavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Group-III nitride materials, gallium nitride (GaN), aluminum nitride (AlN) and indium nitride (InN) have direct band gaps with band gap energies ranging from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN) wavelengths and covering the entire spectral range from 0.7 eV to 6.2 eV upon alloying. The invention of the GaN-based blue LEDs, for which the Nobel prize in Physics was awarded in 2014, has opened up avenues for exploration of IIINitride material and device technologies and has inspired generations of researchers in the semiconductor field. Group-III nitrides have also been demonstrated to be among the most promising semiconductors for next generation of efficient high-power, high-temperature and high-frequency electronic devices.The need to build a sustainable and efficient energy system motivates the development of vertical GaN transistors and diodes for applications with power ratings of 50-150 kW, e.g., in electric vehicles and industrial inverters. The key is to grow GaN layers with low concentration of defects (impurities and dislocations), which enables an expansion in both voltage and current ratings and reduction of cost. Despite intense investigations and impressive advances in the field, defects are still a major problem hindering exploiting the full potential of GaN in power electronics. This Licentiate thesis focuses on the development of two different epitaxial approaches in MOCVD for reducing dislocation densities in GaN with controlled doping for power device applications: i) growth of planar GaN layers trough NWs reformation, which can be further exploited as templates for a subsequent growth of thick drift layers and ii) homoepitaxial GaN growth. Special attention is put on understanding homoepitaxial growth under different nucleation schemes and thermal stability of GaN. We have established conditions in homoepitaxy to deliver state-of-the-art GaN material with low impurity levels combined with a reasonable growth rate suitable for growth of thick drift layers.The results are summarized in two papers: In Paper I we investigate GaN layers with different thicknesses on reformed GaN NW templates and highlight this approach as an alternative to the expensive GaN HVPE substrates. The sapphire used as a substrate limits to some extent the reduction of threading dislocations, however, the resulting GaN material presents smooth surfaces and thermal conductivity close to the bulk value, which suggests the potential of this approach to be integrated in GaN development as an active material for power devices on various substrates. In Paper II extensive study of homoepitaxial GaN growth by hot-wall MOCVD is presented together with results on the thermal stability of GaN under typical conditions used in our growth reactor. Understanding the evolution of GaN surface under different gas compositions and temperatures allows us to predict optimum homoepitaxial conditions. Analysis in the framework of Ga supersaturation of epilayers simultaneously grown on GaN templates and on GaN HVPE substrates reveals that residual strain and screw dislocation densities affect GaN nucleation and growth and lead to distinctively different morphologies on GaN templates and native substrates, respectively. The established comprehensive picture provides guidance for designing strategies for growth conditions optimization in homoepitaxy. We demonstrate homoepitaxial GaN-on-GaN grown under optimum growth conditions with state-of-the-art smooth surface with an rms value of 0.021 nm and an average TDD of 1.4·106 cm-2 which provide good basis for augmenting power device structures.Future work will be focused on GaN NWs reformation on different substrates, p- and n-type doping of homoepitaxial GaN with impurity control and the fabrication of pn power diode device structures for further processing and assessment by C3NiT partners.
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