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| 3. |
- Stenman, U H, et al.
(författare)
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Summary report of the TD-3 workshop: characterization of 83 antibodies against prostate-specific antigen
- 1999
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Ingår i: Tumor Biology. - : Springer Science and Business Media LLC. - 1423-0380 .- 1010-4283. ; 20:Suppl. 1, s. 1-12
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Tidskriftsartikel (refereegranskat)abstract
- Twelve research groups participated in the ISOBM TD-3 Workshop in which the reactivity and specificity of 83 antibodies against prostate-specific antigen (PSA) were investigated. Using a variety of techniques including cross-inhibition assays, Western blotting, BIAcore, immunoradiometric assays and immunohistochemistry, the antibodies were categorized into six major groups which formed the basis for mapping onto two- and three-dimensional (2-D and 3-D) models of PSA. The overall findings of the TD-3 Workshop are summarized in this report. In agreement with all participating groups, three main antigenic domains were identified: free PSA-specific epitopes located in or close to amino acids 86-91; discontinuous epitopes specific for PSA without human kallikrein (hK2) cross-reactivity located at or close to amino acids 158-163; and continuous or linear epitopes shared between PSA and hK2 located close to amino acids 3-11. In addition, several minor and partly overlapping domains were also identified. Clearly, the characterization of antibodies from this workshop and the location of their epitopes on the 3-D model of PSA illustrate the importance of selecting appropriate antibody pairs for use in immunoassays. It is hoped that these findings and the epitope nomenclature described in this TD-3 Workshop are used as a standard for future evaluation of anti-PSA antibodies.
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- Danielsson, Erik, et al.
(författare)
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Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes
- 1999
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Ingår i: Materials Science & Engineering. - 0921-5107 .- 1873-4944. ; 61-62, s. 320-324
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Tidskriftsartikel (refereegranskat)abstract
- Heterojunctions on SiC is an area in rapid development, especially GaN/SiC and AlGaN/SiC heterojunctions. The heterojunction can improve the performance considerably for BJTs and FETs. In this work heterojunction diodes have been manufactured and characterized. The structure was a GaN or AlGaN n-type region on top of a 6H-SiC p-type substrate. Two different approaches of growing the n-type region were tested. The GaN was grown with the MBE technique using a polycrystalline GaN buffer, whereas the AlGaN was grown with CVD and an AlN buffer. The AlGaN had an aluminum mole fraction of around 0.1. Mesa structures were formed using Cl2 RIE of GaN/AlGaN, which showed good selectivity on 6H-SiC (about 1:6). A Ti metallization with subsequent RTA was used as contact to GaN and AlGaN, and the contact to 6H-SiC was liquid InGa. Both I-V and C-V measurements were performed on the heterojunction diode. The ideality factor of the diodes, doping concentration of the SiC, and the band alignment of the heterojunction were extracted. © 1999 Elsevier Science S.A.
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- Dunham, I, et al.
(författare)
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The DNA sequence of human chromosome 22
- 1999
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Ingår i: Nature. - : Springer Science and Business Media LLC. - 0028-0836 .- 1476-4687. ; 402:6761, s. 489-495
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Tidskriftsartikel (refereegranskat)
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| 6. |
- GRUNEWALD, J, et al.
(författare)
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T-cell receptor use in sarcoidosis
- 1995
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Ingår i: Annals of the New York Academy of Sciences. - : Wiley. - 0077-8923 .- 1749-6632. ; 756, s. 349-356
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Tidskriftsartikel (refereegranskat)
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