SwePub
Sök i SwePub databas

  Utökad sökning

Träfflista för sökning "WFRF:(Davydov Y.) srt2:(2003-2004)"

Sökning: WFRF:(Davydov Y.) > (2003-2004)

  • Resultat 1-2 av 2
Sortera/gruppera träfflistan
   
NumreringReferensOmslagsbildHitta
1.
  • Kalinina, E. V., et al. (författare)
  • Effect of irradiation with fast neutrons on electrical characteristics of devices based on CVD 4H-SiC epitaxial layers
  • 2003
  • Ingår i: Semiconductors (Woodbury, N.Y.). - : Pleiades Publishing Ltd. - 1063-7826 .- 1090-6479. ; 37:10, s. 1229-1233
  • Tidskriftsartikel (refereegranskat)abstract
    • The effect of irradiation with 1-MeV neutrons on electrical properties of Al-based Schottky barriers and p(+)-n-n(+) diodes doped by ion-implantation with Al was studied; the devices were formed on the basis of high-resistivity, pure 4H-SiC epitaxial layers possessing n-type conductivity and grown by vapor-transport epitaxy. The use of such structures made it possible to study the radiation defects in the epitaxial layer at temperatures as high as 700 K. Rectifying properties of the diode structures were no longer observed after irradiation of the samples with neutrons with a dose of 6 x 10(14) cm(-2); this effect is caused by high (up to 50 GOmega) resistance of the layer damaged by neutron radiation. However, the diode characteristics of irradiated p(+)-n-n(+) structures were partially recovered after an annealing at 650 K.
  •  
2.
  • Kalinina, E. V., et al. (författare)
  • Optical and electrical properties of 4H-SiC irradiated with fast neutrons and high-energy heavy ions
  • 2004
  • Ingår i: Semiconductors (Woodbury, N.Y.). - : Pleiades Publishing Ltd. - 1063-7826 .- 1090-6479. ; 38:10, s. 1187-1191
  • Tidskriftsartikel (refereegranskat)abstract
    • Photoluminescence and deep-level transient spectroscopy are used to study the effect of irradiation with fast neutrons and high-energy Kr (235 MeV) and Bi (710 MeV) ions on the optical and electrical properties of high-resistivity high-purity n-type 4H-SiC epitaxial layers grown by chemical vapor deposition. Electrical characteristics were studied using the barrier structures based on these epitaxial layers: Schottky barriers with Al and Cr contacts and p(+)-n-n(+) diodes fabricated by Al ion implantation. According to the experimental data obtained, neutrons and high-energy ions give rise to the same defect-related centers. The results show that, even for the extremely high ionization density (34 keV/nm) characteristic of Bi ions, the formation of the defect structure in SiC single crystals is governed by energy losses of particles due to elastic collisions.
  •  
Skapa referenser, mejla, bekava och länka
  • Resultat 1-2 av 2

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

 
pil uppåt Stäng

Kopiera och spara länken för att återkomma till aktuell vy