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- Bayer, K., et al.
(författare)
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Targeted deposition of Au aerosol nanoparticles on vertical nanowires for the creation of nanotrees
- 2007
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Ingår i: Journal of Nanoparticle Research. - : Springer Science and Business Media LLC. - 1572-896X .- 1388-0764. ; 9:6, s. 1211-1216
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Tidskriftsartikel (refereegranskat)abstract
- Complex tree-like nanostructures with controlled morphology are becoming increasingly important for the development of nanoscale devices. The position of branches on III-V semiconductor nanotrees is determined by the distribution of Au seed particles. Here we report the dependence of the distribution of Au aerosol nanoparticles on nanowires on parameters including distance between wires, particle size, wire length, wire diameter, III-V material and particle charge. It was observed that different wire lengths and separation distances as well as different particle polarities have a significant effect on the resulting particle distribution while different wire diameters, particle diameters, materials and deposition voltages do not.
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| 6. |
- Borg, Mattias, et al.
(författare)
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GaAs/GaSb nanowire heterostructures grown by MOVPE
- 2008
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248. ; 310:18, s. 4115-4121
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Tidskriftsartikel (refereegranskat)abstract
- We report Au-assisted growth of GaAs/GaSb nanowire heterostructures on GaAs(1 1 1)B-substrates by metal-organic vapor phase epitaxy. The growth is studied at various precursor molar fractions and temperatures, in order to optimize the growth conditions for the GaSb nanowire segment. In contrast to most other III-V nanowire systems, the GaSb nanowire growth is Group V-limited under most conditions. We found that depending on the TMSb molar fraction, the seed particle is either supersaturated AuGa or AuGa2 during GaSb growth. The high Ga content in the particle gives a characteristic diameter increase between the GaAs and GaSb segment. From TEM and XEDS measurements we conclude that the GaSb nanowire growth occurs along either the AuGa-GaSb or AuGa2-GaSb pseudo-binaries of the Au-Ga-Sb ternary phase diagram. Finally, the GaSb nanowires exhibit untapered radial growth on the {1 (1) over bar 0} side facets. (C) 2008 Elsevier B.V. All rights reserved.
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| 7. |
- Borg, Mattias, et al.
(författare)
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MOVPE Growth and Structural Characterization of Extremely Lattice-Mismatched InP-InSB Nanowire Heterostructures
- 2009
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Ingår i: 2009 IEEE 21st International Conference On Indium Phosphide & Related Materials (IPRM). - 1092-8669. ; , s. 249-252
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Konferensbidrag (refereegranskat)abstract
- We present a growth study and structural characterization of InP-InSb nanowire heterostructures. In contrast to planar epitaxy, this heterostructure can be realized in nanowires without the formation of dislocations, despite an extreme lattice-mismatch (10.4%). We obtain high crystal quality in the InSb nanowires, confirmed by a narrow 111 reflection peak measured by XRD. Additionally, the diameter dependence of the nanowire growth rate was investigated. An original competition between surface growth and nanowire growth is found, which can be controlled by varying the nanowire surface coverage. Finally, HRTEM and X-EDS investigations reveal that the InSb nanowire is always defect-free zinc-blende, and that the InP-InSb heterointerface is free from misfit dislocations, although single twin planes are common.
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| 8. |
- Borgström, Magnus, et al.
(författare)
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Precursor evaluation for in situ InP nanowire doping
- 2008
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 19:44
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Tidskriftsartikel (refereegranskat)abstract
- The use of tetraethyltin (TESn) and dimethylzinc (DMZn) as in situ n- and p-dopant precursors during particle-assisted growth of InP nanowires is reported. Gate voltage dependent transport measurements demonstrate that the nanowires can be predictably synthesized as either n- or p-type. These doped nanowires can be characterized based on their electric field response and we find that n- type doping scales over a range from 10(17) to 10(19) cm(-3) with increasing input TESn dopant molar fraction. On the other hand, the p-type doping using DMZn saturates at low levels, probably related to a strong increase in nanowire growth rate with increasing DMZn molar fractions. By optimizing growth conditions with respect to tapering, axial pn-junctions exhibiting rectifying behavior were fabricated. The pn-junctions can be operated as light emitting diodes.
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- Böttger, Michael, et al.
(författare)
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Electrospraying of colloidal nanoparticles for seeding of nanostructure growth
- 2007
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 18:10
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Tidskriftsartikel (refereegranskat)abstract
- Nanometre-sized particles (1-100 nm) have unique properties receiving growing attention in wide areas of research. Here, a convenient method to deposit size-selected nanoparticles on surfaces by means of electrospraying colloidal suspensions in the aerosol phase is presented. We demonstrate the deposition of individual nanoparticles and the feasibility of this method in seeding gold particles for nanostructure growth. An advantage of the present method is the easy set-up and operation, using only commercially available machinery and substances. Problems regarding low deposition rates and colloidal remnants are approached, e. g. the aerosol flow is examined in a differential mobility analyser. This method is not material dependent and could be extended to deposit any colloidal particle.
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